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1.发明授权公开(公告)号：US07951728B2
公开(公告)日：2011-05-31
申请号：US11860161
申请日：2007-09-24
IPC分类号： H01L21/00
CPC分类号： H01L21/02238 , H01L21/0223 , H01L21/02255 , H01L21/28247 , H01L21/31662 , H01L21/32
摘要： A method for selective oxidation of silicon containing materials in a semiconductor device is disclosed and claimed. In one aspect, a rapid thermal processing apparatus is used to selectively oxidize a substrate by in-situ steam generation at high pressure in a hydrogen rich atmosphere. Other materials, such as metals and barrier layers, in the substrate are not oxidized.
摘要翻译： 公开并要求保护半导体器件中含硅材料的选择性氧化的方法。 一方面，快速热处理装置用于通过在富氢气氛中高压下原位蒸汽产生来选择性氧化基板。 衬底中的其它材料，例如金属和阻挡层，不被氧化。
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公开(公告)号：US07922863B2
公开(公告)日：2011-04-12
申请号：US11615633
申请日：2006-12-22
IPC分类号： H01L21/306 , C23F1/00 , C23C16/00
CPC分类号： C23C16/45565
摘要： An apparatus for photo-assisted or photo-induced processes is disclosed, comprising a process chamber having an integrated gas and radiation distribution plate. In one embodiment, the plate has one set of apertures for distributing one or more process gases, and another set of apertures for distributing radiation to a process region in the chamber.
摘要翻译： 公开了一种用于光辅助或光引发工艺的装置，包括具有集成的气体和辐射分布板的处理室。 在一个实施例中，板具有用于分配一个或多个处理气体的一组孔，以及用于将辐射分配到室中的处理区域的另一组孔。
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公开(公告)号：US08546271B2
公开(公告)日：2013-10-01
申请号：US13117931
申请日：2011-05-27
IPC分类号： H01L21/02
CPC分类号： H01L21/02238 , H01L21/0223 , H01L21/02255 , H01L21/28247 , H01L21/31662 , H01L21/32
摘要： A method for selective oxidation of silicon containing materials in a semiconductor device is disclosed and claimed. In one aspect, a rapid thermal processing apparatus is used to selectively oxidize a substrate by in-situ steam generation at high pressure in a hydrogen rich atmosphere. Other materials, such as metals and barrier layers, in the substrate are not oxidized.
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4.发明申请公开(公告)号：US20110230060A1
公开(公告)日：2011-09-22
申请号：US13117931
申请日：2011-05-27
IPC分类号： H01L21/316
CPC分类号： H01L21/02238 , H01L21/0223 , H01L21/02255 , H01L21/28247 , H01L21/31662 , H01L21/32
摘要： A method for selective oxidation of silicon containing materials in a semiconductor device is disclosed and claimed. In one aspect, a rapid thermal processing apparatus is used to selectively oxidize a substrate by in-situ steam generation at high pressure in a hydrogen rich atmosphere. Other materials, such as metals and barrier layers, in the substrate are not oxidized.
摘要翻译： 公开并要求保护半导体器件中含硅材料的选择性氧化的方法。 一方面，快速热处理装置用于通过在富氢气氛中高压下原位蒸汽产生来选择性氧化基板。 衬底中的其它材料，例如金属和阻挡层，不被氧化。
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公开(公告)号：US20080152840A1
公开(公告)日：2008-06-26
申请号：US11615633
申请日：2006-12-22
IPC分类号： C23C16/00
CPC分类号： C23C16/45565
摘要： An apparatus for photo-assisted or photo-induced processes is disclosed, comprising a process chamber having an integrated gas and radiation distribution plate. In one embodiment, the plate has one set of apertures for distributing one or more process gases, and another set of apertures for distributing radiation to a process region in the chamber.
摘要翻译： 公开了一种用于光辅助或光引发工艺的装置，包括具有集成的气体和辐射分布板的处理室。 在一个实施例中，板具有用于分配一个或多个处理气体的一组孔，以及用于将辐射分配到室中的处理区域的另一组孔。
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6.发明申请公开(公告)号：US20090081884A1
公开(公告)日：2009-03-26
申请号：US11860161
申请日：2007-09-24
IPC分类号： H01L21/316
CPC分类号： H01L21/02238 , H01L21/0223 , H01L21/02255 , H01L21/28247 , H01L21/31662 , H01L21/32
摘要： A method for selective oxidation of silicon containing materials in a semiconductor device is disclosed and claimed. In one aspect, a rapid thermal processing apparatus is used to selectively oxidize a substrate by in-situ steam generation at high pressure in a hydrogen rich atmosphere. Other materials, such as metals and barrier layers, in the substrate are not oxidized.
摘要翻译： 公开并要求保护半导体器件中含硅材料的选择性氧化的方法。 一方面，快速热处理装置用于通过在富氢气氛中高压下原位蒸汽产生来选择性氧化基板。 衬底中的其它材料，例如金属和阻挡层，不被氧化。
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