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    Methods for oxidation of a semiconductor device
    9.
    发明授权
    Methods for oxidation of a semiconductor device 有权
    氧化半导体器件的方法

    公开(公告)号：US08207044B2

    公开(公告)日：2012-06-26

    申请号：US13110613

    申请日：2011-05-18

    申请人： Rajesh Mani ,  Norman Tam ,  Timothy W. Weidman ,  Yoshitaka Yokota

    发明人： Rajesh Mani ,  Norman Tam ,  Timothy W. Weidman ,  Yoshitaka Yokota

    IPC分类号： H01L21/331

    CPC分类号： H01L21/31662 ,  H01L21/0223 ,  H01L21/02238 ,  H01L21/02244 ,  H01L21/02252 ,  H01L21/28273 ,  H01L21/31683 ,  H01L21/32105

    摘要： Methods of fabricating an oxide layer on a semiconductor substrate are provided herein. The oxide layer may be formed over an entire structure disposed on the substrate, or selectively formed on a non-metal containing layer with little or no oxidation of an exposed metal-containing layer. The methods disclosed herein may be performed in a variety of process chambers, including but not limited to decoupled plasma oxidation chambers, rapid and/or remote plasma oxidation chambers, and/or plasma immersion ion implantation chambers. In some embodiments, a method may include providing a substrate comprising a metal-containing layer and non-metal containing layer; and forming an oxide layer on an exposed surface of the non-metal containing layer by exposing the substrate to a plasma formed from a process gas comprising a hydrogen-containing gas, an oxygen-containing gas, and at least one of a supplemental oxygen-containing gas or a nitrogen-containing gas.

    摘要翻译： 本文提供了在半导体衬底上制造氧化物层的方法。 氧化物层可以形成在设置在基板上的整个结构上，或者选择性地形成在非金属含有层上，具有暴露的含金属层的很少或没有氧化。 本文公开的方法可以在各种处理室中执行，包括但不限于去耦等离子体氧化室，快速和/或远程等离子体氧化室和/或等离子体浸入离子注入室。 在一些实施方案中，方法可以包括提供包含含金属层和不含金属的层的基材; 以及通过将衬底暴露于由包含含氢气体，含氧气体和至少一种补充氧气的工艺气体形成的等离子体而在非含金属层的暴露表面上形成氧化物层， 含有气体或含氮气体。

    Methods for oxidation of a semiconductor device
    10.
    发明授权
    Methods for oxidation of a semiconductor device 有权
    氧化半导体器件的方法

    公开(公告)号：US07947561B2

    公开(公告)日：2011-05-24

    申请号：US12401895

    申请日：2009-03-11

    申请人： Rajesh Mani ,  Norman Tam ,  Timothy W. Weidman ,  Yoshitaka Yokota

    发明人： Rajesh Mani ,  Norman Tam ,  Timothy W. Weidman ,  Yoshitaka Yokota

    IPC分类号： H01L21/00

    CPC分类号： H01L21/31662 ,  H01L21/0223 ,  H01L21/02238 ,  H01L21/02244 ,  H01L21/02252 ,  H01L21/28273 ,  H01L21/31683 ,  H01L21/32105

    摘要： Methods of fabricating an oxide layer on a semiconductor substrate are provided herein. The oxide layer may be formed over an entire structure disposed on the substrate, or selectively formed on a non-metal containing layer with little or no oxidation of an exposed metal-containing layer. The methods disclosed herein may be performed in a variety of process chambers, including but not limited to decoupled plasma oxidation chambers, rapid and/or remote plasma oxidation chambers, and/or plasma immersion ion implantation chambers. In some embodiments, a method may include providing a substrate comprising a metal-containing layer and non-metal containing layer; and forming an oxide layer on an exposed surface of the non-metal containing layer by exposing the substrate to a plasma formed from a process gas comprising a hydrogen-containing gas, an oxygen-containing gas, and at least one of a supplemental oxygen-containing gas or a nitrogen-containing gas.

    摘要翻译： 本文提供了在半导体衬底上制造氧化物层的方法。 氧化物层可以形成在设置在基板上的整个结构上，或者选择性地形成在非金属含有层上，具有暴露的含金属层的很少或没有氧化。 本文公开的方法可以在各种处理室中执行，包括但不限于去耦等离子体氧化室，快速和/或远程等离子体氧化室和/或等离子体浸入离子注入室。 在一些实施方案中，方法可以包括提供包含含金属层和不含金属的层的基材; 以及通过将衬底暴露于由包含含氢气体，含氧气体和至少一种补充氧气的工艺气体形成的等离子体而在非含金属层的暴露表面上形成氧化物层， 含有气体或含氮气体。