摘要:
An SI.sub.1 I.sub.2 M (semiconductor-insulator.sub.1 -insulator.sub.2 -metal) memory structure, containing an impurity such as tungsten concentrated in a region including the interface ("I.sub.1 I.sub.2 ") region between the I.sub.1 and I.sub.2 region, is fabricated by depositing an oxide of the impurity, such as tungsten trioxide, on the then exposed, I.sub.1 layer prior to fabricating the I.sub.2 layer. The oxide of the impurity, such as tungsten trioxide, can be advantageously deposited by means of reactive evaporation.
摘要:
This invention relates to a method for producing a low-cost solution to the problem of radiation leakage that escapes from modern microwave ovens due to the door cracks that form in the under-size bezels used in today's microwave oven market. The appliqué structure of the Patent includes a ⅛ inch diameter copper wire that is used to terminate the field lines of any escaping radiation thus preventing leakage beyond the oven itself.