公开(公告)号：US5124272A

公开(公告)日：1992-06-23

申请号：US565960

申请日：1990-08-13

申请人： Naoto Saito ,  Kenji Aoki ,  Tadao Akamine ,  Yoshikazu Kojima ,  Kunihiro Takahashi ,  Masahiko Kinbara

发明人： Naoto Saito ,  Kenji Aoki ,  Tadao Akamine ,  Yoshikazu Kojima ,  Kunihiro Takahashi ,  Masahiko Kinbara

IPC分类号： H01L21/225 ,  H01L21/336

CPC分类号： H01L29/66575 ,  H01L21/2254 ,  H01L29/66628 ,  H01L29/66636

摘要： An impurity adsorption layer is selectively formed from a gas containing an impurity on a semiconductor surface. Solid-phase diffusion of the impurity is effected from the impurity adsorption layer into the semiconductor surface to form a source region and a drain region having a sufficiently small resistivity and an ultrashallow PN junction depth, thereby producing a metal-insulator semiconductor field-effect-transistor featuring fast operating speed and reduced dimensions.

公开(公告)号：US06191476B1

公开(公告)日：2001-02-20

申请号：US08859571

申请日：1997-05-20

申请人： Kunihiro Takahashi ,  Mizuaki Suzuki ,  Tsuneo Yamazaki ,  Hiroaki Takasu ,  Kunio Nakajima ,  Atsushi Sakurai ,  Tadao Iwaki ,  Yoshikazu Kojima ,  Masaaki Kamiya

发明人： Kunihiro Takahashi ,  Mizuaki Suzuki ,  Tsuneo Yamazaki ,  Hiroaki Takasu ,  Kunio Nakajima ,  Atsushi Sakurai ,  Tadao Iwaki ,  Yoshikazu Kojima ,  Masaaki Kamiya

IPC分类号： H01L2310

CPC分类号： G02F1/13454 ,  G02F1/133512 ,  G02F2001/136281 ,  H01L23/36 ,  H01L23/367 ,  H01L27/12 ,  H01L27/1203 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

摘要： To provide a semiconductor substrate and a light-valve semiconductor substrate capable of preventing the threshold value of a MOS transistor on a single-crystal silicon device forming layer from increasing and forming a MOS integrated circuit with a high reliability even for a long-time operation. A semiconductor substrate and a light-valve semiconductor substrate comprising a single-crystal silicon thin-film device forming layer 5001 formed above an insulating substrate 5004 through an adhesive layer 5003 and an insulating layer 5002 formed on the single-crystal silicon thin-film device forming layer, wherein a heat conductive layers 5201 and 5202 made of a material with a high heat conductivity are arranged between the single-crystal silicon thin-film device forming layer and the adhesive layer and on the insulating layer.

摘要翻译： 为了提供能够防止单晶硅器件形成层上的MOS晶体管的阈值的半导体衬底和光阀半导体衬底，即使对于长时间操作而增加并形成具有高可靠性的MOS集成电路 。 一种半导体衬底和一个光阀半导体衬底，它包括通过粘合剂层5003形成在绝缘衬底5004上的单晶硅薄膜器件形成层5001和形成在单晶硅薄膜器件上的绝缘层5002 形成层，其中在单晶硅薄膜器件形成层和粘合剂层之间以及绝缘层上布置由具有高导热性的材料制成的导热层5201和5202。

公开(公告)号：US5585304A

公开(公告)日：1996-12-17

申请号：US293415

申请日：1994-08-02

申请人： Yutaka Hayashi ,  Kunihiro Takahashi ,  Hiroaki Takasu ,  Yoshikazu Kojima ,  Hitoshi Niwa ,  Nobuyoshi Matsuyama ,  Yomoyuki Yoshino ,  Masaaki Kamiya

发明人： Yutaka Hayashi ,  Kunihiro Takahashi ,  Hiroaki Takasu ,  Yoshikazu Kojima ,  Hitoshi Niwa ,  Nobuyoshi Matsuyama ,  Yomoyuki Yoshino ,  Masaaki Kamiya

IPC分类号： H01L27/12 ,  H01L21/02 ,  H01L21/30 ,  H01L21/762 ,  H01L21/302

CPC分类号： H01L21/76251 ,  Y10S148/012 ,  Y10S148/135 ,  Y10S148/148 ,  Y10S438/977

摘要： A semiconductor wafer is comprised of a transparent layer interposed between a thin silicon layer and a thick silicon layer. Silicon islands are formed from the thin silicon layer on the transparent layer. Device elements are formed in the silicon islands. Thereafter, the thick silicon layer which is a support layer is etched away to form a transparent region on the wafer. The wafer is constructed to avoid elimination or destruction of the transparent layer during the course of formation of the silicon islands and during the course of etching of the rear thick silicon plate. The transparent layer is comprised of a silicon nitride film or a silicon carbide film. Alternatively, the transparent layer is comprised of a silicon oxide film covered by a silicon nitride film or a silicon carbide film on one or both of the upper and lower faces of the silicon oxide film.

摘要翻译： 半导体晶片由介于薄硅层和厚硅层之间的透明层构成。 硅岛由透明层上的薄硅层形成。 器件元件形成在硅岛中。 此后，作为支撑层的厚硅层被蚀刻掉以在晶片上形成透明区域。 构造晶片以避免在形成硅岛的过程中和在后厚硅板的蚀刻过程中消除或破坏透明层。 透明层由氮化硅膜或碳化硅膜构成。 或者，透明层由在氧化硅膜的上表面和下表面的一个或两个上由氮化硅膜或碳化硅膜覆盖的氧化硅膜构成。

公开(公告)号：US5486708A

公开(公告)日：1996-01-23

申请号：US264635

申请日：1994-06-23

申请人： Kunihiro Takahashi ,  Yoshikazu Kojima ,  Hiroaki Takasu ,  Nobuyoshi Matsuyama ,  Hitoshi Niwa ,  Tomoyuki Yoshino ,  Tsuneo Yamazaki

发明人： Kunihiro Takahashi ,  Yoshikazu Kojima ,  Hiroaki Takasu ,  Nobuyoshi Matsuyama ,  Hitoshi Niwa ,  Tomoyuki Yoshino ,  Tsuneo Yamazaki

IPC分类号： H01L29/78 ,  G02F1/1335 ,  G02F1/1362 ,  H01L21/336 ,  H01L21/762 ,  H01L21/77 ,  H01L21/84 ,  H01L29/786 ,  H01L33/00

CPC分类号： G02F1/13454 ,  H01L21/76264 ,  H01L27/1214 ,  H01L27/1266 ,  H01L29/66772 ,  H01L29/78648 ,  G02F1/133512 ,  G02F2001/13613 ,  G02F2202/105 ,  H01L21/76289 ,  H01L2221/68363 ,  Y10S148/012 ,  Y10S148/135

摘要： A semiconductor device having a double-side wiring structure, in which a single crystal semiconductor thin film is formed integrally with transistor elements and is laminated on an insulating thin film. The single crystal semiconductor thin film is formed with through-holes and the insulating thin film is formed on its back side with electrodes and a shielding film. A light valve device using the semiconductor device is also disclosed. Over the single crystal semiconductor thin film, there are formed switching elements of transistors, pixel electrodes connected electrically with the switching elements, and drive circuits for scanning and driving the switching elements. Also disclosed is a miniature highly dense light valve device. In this light valve device, an electrooptical substance is arranged between a multi-layer substrate. The multi-layer substrate is formed with electrodes and a shielding film at the opposed side of the insulating film to the side formed with the grouped elements through the insulating film. A transparent opposite substrate is also formed so that the optical transparency of the electrooptical substance is controlled by the switching elements.

摘要翻译： 具有双面布线结构的半导体器件，其中单晶半导体薄膜与晶体管元件整体形成并层压在绝缘薄膜上。 单晶半导体薄膜形成有通孔，并且绝缘薄膜在其背面形成有电极和屏蔽膜。 还公开了使用该半导体器件的光阀装置。 在单晶半导体薄膜上形成晶体管的开关元件，与开关元件电连接的像素电极以及用于扫描和驱动开关元件的驱动电路。 还公开了一种微型高密度光阀装置。 在该光阀装置中，在多层基板之间配置有电光物质。 多层基板在绝缘膜的相对侧的电极和屏蔽膜上形成有通过绝缘膜形成有分组元件的一侧。 还形成透明的相对基板，使得电光物质的光学透明度由开关元件控制。

公开(公告)号：US5463238A

公开(公告)日：1995-10-31

申请号：US22369

申请日：1993-02-25

申请人： Kunihiro Takahashi ,  Masaaki Kamiya ,  Yoshikazu Kojima ,  Hiroaki Takasu

发明人： Kunihiro Takahashi ,  Masaaki Kamiya ,  Yoshikazu Kojima ,  Hiroaki Takasu

IPC分类号： H01L27/06 ,  H01L27/092 ,  H01L27/12 ,  H01L29/786 ,  H01L27/02 ,  H01L21/225 ,  H01L29/06

CPC分类号： H01L29/78609 ,  H01L27/0688 ,  H01L27/0921 ,  H01L27/0928 ,  H01L27/1203 ,  H01L29/78654

摘要： A semiconductor device comprises a complementary MOS transistor integrated circuit formed in a semiconductor single crystal silicon disposed on an electrically insulating layer. A thickness of the single crystal silicon in a region in which an N-type MOS transistor is formed is made thicker than the thickness in a region in which a P-type MOS transistor is formed. By this structure, the bottoms of the source region and the drain region of the N-type transistor are separated from the electrically insulating layer by a predetermined distance. The separation of the source region and the drain region from the electrically insulating layer is effective to prevent a parasitic channel from forming, thereby reducing leakage current and making the semiconductor device more efficient.

摘要翻译： 半导体器件包括形成在设置在电绝缘层上的半导体单晶硅中的互补MOS晶体管集成电路。 形成N型MOS晶体管的区域中的单晶硅的厚度比形成有P型MOS晶体管的区域的厚度厚。 通过这种结构，N型晶体管的源极区域和漏极区域的底部与电绝缘层分离预定距离。 源极区域和漏极区域与电绝缘层的分离对于防止形成寄生沟道是有效的，从而减少漏电流并使半导体器件更有效率。

公开(公告)号：US5434433A

公开(公告)日：1995-07-18

申请号：US106418

申请日：1993-08-13

申请人： Hiroaki Takasu ,  Yoshikazu Kojima ,  Kunihiro Takahashi ,  Tsuneo Yamazaki ,  Tadao Iwaki

发明人： Hiroaki Takasu ,  Yoshikazu Kojima ,  Kunihiro Takahashi ,  Tsuneo Yamazaki ,  Tadao Iwaki

IPC分类号： G02F1/1335 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  G09G3/36 ,  H01L21/77 ,  H01L27/12 ,  H01L29/786 ,  H01L33/00

CPC分类号： G02F1/13454 ,  H01L27/1203 ,  H01L27/1214 ,  G02F2001/136281 ,  G02F2202/105

摘要： A semiconductor substrate is utilized to integrally form a drive circuit and a pixel array to produce a transparent semiconductor device for a light valve. The semiconductor device for a light valve is constructed by a semiconductor substrate composed of a bulk single crystal silicon having an opaque thick portion and a thin transparent portion. A pixel array is formed in the transparent portion. A drive circuit is formed in a top face of the opaque portion. A transparent support substrate is laminated to the top face of the semiconductor substrate for reinforcement. A bulk portion of the semiconductor substrate is removed from a back face thereof by selective etching to provide the transparent portion.

摘要翻译： 利用半导体衬底整体地形成驱动电路和像素阵列以产生用于光阀的透明半导体器件。 用于光阀的半导体器件由具有不透明厚部分和薄透明部分的大块单晶硅构成的半导体衬底构成。 在透明部分中形成像素阵列。 驱动电路形成在不透明部分的顶面。 将透明支撑基板层叠到半导体基板的顶面以进行加强。 通过选择性蚀刻从其背面去除半导体衬底的主体部分以提供透明部分。

公开(公告)号：US06187605B1

公开(公告)日：2001-02-13

申请号：US08308564

申请日：1994-09-19

申请人： Hiroaki Takasu ,  Yoshikazu Kojima ,  Kunihiro Takahashi ,  Tsuneo Yamazaki ,  Tadao Iwaki

发明人： Hiroaki Takasu ,  Yoshikazu Kojima ,  Kunihiro Takahashi ,  Tsuneo Yamazaki ,  Tadao Iwaki

IPC分类号： H01L2100

CPC分类号： H01L27/1214 ,  G02F1/13454 ,  G02F2001/136281 ,  G02F2202/105 ,  H01L27/1203

摘要： A semiconductor substrate is utilized to integrally form a drive circuit and a pixel array to produce a transparent semiconductor device for a light valve. The semiconductor device for a light valve is constructed of a semiconductor substrate composed of a bulk single crystal silicon having an opaque thick portion and a thin transparent portion. A pixel array is formed in the transparent portion. A drive circuit is formed in a top face of the opaque portion. A transparent support substrate is laminated to the top face of the semiconductor substrate for reinforcement. A bulk portion of the semiconductor substrate is removed from a back face thereof by selective etching to provide the transparent portion.

摘要翻译： 利用半导体衬底整体地形成驱动电路和像素阵列以产生用于光阀的透明半导体器件。 用于光阀的半导体器件由具有不透明厚部分和薄透明部分的块状单晶硅构成的半导体衬底构成。 在透明部分中形成像素阵列。 驱动电路形成在不透明部分的顶面。 将透明支撑基板层叠到半导体基板的顶面以进行加强。 通过选择性蚀刻从其背面去除半导体衬底的主体部分以提供透明部分。

公开(公告)号：US5633176A

公开(公告)日：1997-05-27

申请号：US463687

申请日：1995-06-05

申请人： Hiroaki Takasu ,  Yoshikazu Kojima ,  Kunihiro Takahashi ,  Tsuneo Yamazaki ,  Tadao Iwaki

发明人： Hiroaki Takasu ,  Yoshikazu Kojima ,  Kunihiro Takahashi ,  Tsuneo Yamazaki ,  Tadao Iwaki

IPC分类号： G02F1/1362 ,  H01L27/12 ,  H01L21/84 ,  H01L21/304

CPC分类号： G02F1/13454 ,  H01L27/12 ,  H01L27/1203 ,  G02F2001/136281 ,  G02F2202/105 ,  Y10S438/977

摘要： A semiconductor substrate is utilized to integrally form a drive circuit and a pixel array to produce a transparent semiconductor device for a light valve comprising a pixel array region and a drive circuit region on a major face of the semiconductor substrate. A stopper film is formed on the major face of the semiconductor substrate at the pixel array region, and a pixel array is formed over the silicon oxide stopper film. A drive circuit is formed on the drive circuit region, and silicon oxide posts are embedded in the major face of the semiconductor substrate at the drive circuit region. A thickness of the semiconductor substrate is then selectively removed from a back face opposite to the major face thereof to reach the stopper film. After the selective removing step, the portion of the semiconductor substrate under the pixel region is completely removed while a portion of the semiconductor substrate under the drive circuit region remains.

摘要翻译： 半导体衬底被用于整体形成驱动电路和像素阵列以产生用于光阀的透明半导体器件，其包括在半导体衬底的主面上的像素阵列区域和驱动电路区域。 在像素阵列区域的半导体基板的主面上形成有阻挡膜，在氧化硅阻挡膜上形成像素阵列。 在驱动电路区域上形成驱动电路，在驱动电路区域，氧化硅柱嵌入半导体基板的主面。 然后从与其主面相反的背面选择性地去除半导体衬底的厚度以到达阻挡膜。 在选择性去除步骤之后，半导体衬底在像素区域下方的部分被完全去除，而驱动电路区域下的半导体衬底的一部分保留。

公开(公告)号：US5574292A

公开(公告)日：1996-11-12

申请号：US57986

申请日：1993-05-05

申请人： Kunihiro Takahashi ,  Yoshikazu Kojima ,  Hiroaki Takasu ,  Tsuneo Yamazaki ,  Tadao Iwaki

发明人： Kunihiro Takahashi ,  Yoshikazu Kojima ,  Hiroaki Takasu ,  Tsuneo Yamazaki ,  Tadao Iwaki

IPC分类号： H01L29/78 ,  G02F1/1362 ,  H01L27/12 ,  H01L29/786 ,  H01L33/00

CPC分类号： G02F1/13454 ,  H01L27/1203 ,  H01L29/78609 ,  H01L29/78621 ,  G02F2202/105

摘要： A semiconductor device has an integrated circuit formed in a monosilicon layer provided on an electrically insulative material. The monosilicon layer has an integrated circuit formed thereon, and a passivation film covers the integrated circuit. A support member is fixed to the electrically insulative material through an adhesive layer to support the monosilicon layer. The integrated circuit comprises an MIS transistor having a source region, drain region, and channel region formed in the monosilicon layer. The semiconductor device is suitable for use in a high speed, high capacity liquid crystal light valve having a structure where a pixel switching element group and a peripheral driver circuit are formed integrally on a common substrate.

摘要翻译： 半导体器件具有形成在设置在电绝缘材料上的单硅层中的集成电路。 单晶硅层具有形成在其上的集成电路，钝化膜覆盖集成电路。 支撑构件通过粘合剂层固定到电绝缘材料以支撑单硅层。 集成电路包括具有形成在单硅层中的源极区，漏极区和沟道区的MIS晶体管。 该半导体装置适用于具有像素开关元件组和周边驱动电路一体地形成在共同的基板上的结构的高速，高容量的液晶光阀。

公开(公告)号：US5572045A

公开(公告)日：1996-11-05

申请号：US460538

申请日：1995-06-02

申请人： Kunihiro Takahashi ,  Yoshikazu Kojima ,  Hiroaki Takasu ,  Nobuyoshi Matsuyama ,  Hitoshi Niwa ,  Tomoyuki Yoshino ,  Tsuneo Yamazaki

发明人： Kunihiro Takahashi ,  Yoshikazu Kojima ,  Hiroaki Takasu ,  Nobuyoshi Matsuyama ,  Hitoshi Niwa ,  Tomoyuki Yoshino ,  Tsuneo Yamazaki

IPC分类号： H01L29/78 ,  G02F1/1335 ,  G02F1/1362 ,  H01L21/336 ,  H01L21/762 ,  H01L21/77 ,  H01L21/84 ,  H01L29/786 ,  H01L33/00

CPC分类号： G02F1/13454 ,  H01L21/76264 ,  H01L27/1214 ,  H01L27/1266 ,  H01L29/66772 ,  H01L29/78648 ,  G02F1/133512 ,  G02F2001/13613 ,  G02F2202/105 ,  H01L21/76289 ,  H01L2221/68363 ,  Y10S148/012 ,  Y10S148/135

摘要： Herein disclosed are a semiconductor device having a double-side wiring structure, in which a single crystal semiconductor thin film formed integrally with transistor elements is laminated on an insulating thin film and is formed with through holes and in which the insulating thin film is formed on its back with electrodes and a shielding film, and a light valve device using the semiconductor device. Over the single crystal semiconductor thin film, there are formed switching elements of transistors, pixel electrodes connected electrically with the switching elements, and drive circuits for scanning and driving the switching elements. Also disclosed is a miniature highly dense light valve device. In this light valve device, an electrooptical substance is arranged between a multi-layer substrate, which is formed with electrodes and a shielding film at the opposed side of the insulating film to the side formed with the grouped elements through the insulating film, and a transparent opposite substrate, so that the optical transparency of the electrooptical substance is controlled by the switching elements.

摘要翻译： 这里公开了具有双面布线结构的半导体器件，其中与绝缘薄膜层叠与晶体管元件一体形成的单晶半导体薄膜并形成有通孔，并且其中形成绝缘薄膜 其背面具有电极和屏蔽膜，以及使用该半导体器件的光阀装置。 在单晶半导体薄膜上形成晶体管的开关元件，与开关元件电连接的像素电极以及用于扫描和驱动开关元件的驱动电路。 还公开了一种微型高密度光阀装置。 在该光阀装置中，在形成有电极的多层基板和通过绝缘膜形成有分组元件的一侧的绝缘膜的相对侧的屏蔽膜之间设置电光物质， 透明的相对基板，使得电光物质的光学透明度由开关元件控制。