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公开(公告)号:US20130112566A1
公开(公告)日:2013-05-09
申请号:US13701063
申请日:2011-05-31
IPC分类号: H05K3/22
CPC分类号: H05K3/22 , C23F1/18 , C25D3/38 , C25D5/48 , H01L21/2885 , H01L21/32115 , H01L21/32134 , H01L21/7684 , H05K3/067 , H05K3/107 , H05K3/18
摘要: The present invention is concerned with improved means for etching circuit structures on printed circuit board or wafer substrates of copper or copper alloys in a manner effectively removing unwanted copper from such circuit structures leaving behind a smooth copper surface applying an etching solution containing an Fe(II)/Fe(III) redox system and sulfur containing organic additives. It is an advantage of the present invention that the solution can also applied for plating of copper prior to etching.
摘要翻译: 本发明涉及用于在铜或铜合金的印刷电路板或晶片衬底上蚀刻电路结构的改进方法,从而有效地从这种电路结构去除不需要的铜,留下光滑的铜表面,施加含有Fe(II )/ Fe(III)氧化还原体系和含硫有机添加剂。 本发明的优点是,该溶液也可以在蚀刻之前用于镀铜。