公开(公告)号：US4928285A

公开(公告)日：1990-05-22

申请号：US314176

申请日：1989-02-23

申请人： Mitsuhiro Kushibe ,  Kazuhiro Eguchi ,  Masahisa Funamizu ,  Yasuo Ohba

发明人： Mitsuhiro Kushibe ,  Kazuhiro Eguchi ,  Masahisa Funamizu ,  Yasuo Ohba

IPC分类号： H01S5/16 ,  H01S5/227 ,  H01S5/30 ,  H01S5/323

CPC分类号： H01S5/16 ,  H01S5/227 ,  H01S5/305 ,  H01S5/164 ,  H01S5/2275 ,  H01S5/3068 ,  H01S5/32391

摘要： An impurity-doped double-heterostructure semiconductor laser adapted for single-longitudinal-mode operation is disclosed which includes a semiconductive substrate and a mesa of double-heterostructure formed over the substrate. The mesa comprises an active layer serving as a light-emitting layer, a waveguiding layer adjacent to the active layer and clad layers interposing the active layer and the waveguiding layer therebetween. A high-resistively layer is formed to bury the lateral surfaces of the mesa. The active layer contains impurities of a rare earth element with a previously selected concentration. The limited concentration of impurities is high enough to confine only light components falling within a specific range of wavelength, of all the light components produced in the active layer when the laser device is operative, within the active layer so as to provide single wavelength laser oscillation and low enough to inhibit the initiation of spontaneous emission of the rare earth element within the active layer. For example, the concentration may be set to 1.times.10.sup.18 cm.sup.-3 or below.

摘要翻译： 公开了一种适用于单纵模操作的杂质掺杂双异质结构半导体激光器，其包括半导体基片和形成在基片上的双异质结构的台面。 台面包括用作发光层的有源层，与有源层相邻的波导层和在其间插入有源层和波导层的包层。 形成高电阻层以埋设台面的侧表面。 活性层含有预先选定浓度的稀土元素的杂质。 有限的杂质浓度足够高，仅限于在有源层内仅在有源层内限制落在特定波长范围内的所有在活性层中产生的光分量的光成分，以提供单波长激光振荡 并且足够低以抑制活性层内稀土元素的自发发射。 例如，浓度可以设定为1×10 18 cm -3以下。