摘要:
In one embodiment, a method is disclosed for manufacturing a semiconductor device. The method can include forming a resist on a subject layer containing silicon. The method can etch the subject layer using the resist as a mask and with a gas containing a halogen element, which is introduced into a processing chamber. After the etching of the subject layer, the method can slim a planner size of the resist with oxygen gas and a gas containing a halogen element, which are introduced into the same processing chamber.
摘要:
A method for developing light-sensitive silver halide photographic materials, in a compact automatic developing machine, comprising transporting the light-sensitive silver halide photographic materials to a processing tank which contains a processing solution for processing an exposed light-sensitive silver halide photographic material. The processing tank includes a processing portion, and a receiving portion for receiving a solid processing agent. A solid processing agent is supplied to the receiving portion of the processing tank based on information on the amount of processing of the light-sensitive silver halide photographic materials. The solid processing agent is preferably in the form of tablets which contain all components necessary to process the light-sensitive silver halide photographic material. The processing solution is circulated between the processing portion and the receiving portion at a flow rate of not less than 0.5 times the processing tank volume per minute.
摘要:
A sliding plate for securing a camera to a camera stand having a tapered surface at both inner sides, a sliding plate having a tapered surface at both outer sides thereof and being mounted on and released from the camera stand and being slidable along the tapered surface of the camera stand and a set spring having a spring at a bottom thereof, the set spring having at a portion adjacent to at least one of the tapered surfaces of the camera stand and being lifted by the elastic force of the spring to linearly sink and float the set spring along the tapered surface of the camera stand.
摘要:
There are disclosed a method for processing a light-sensitive silver halide color photographic material by subjecting a light-sensitive silver halide color photographic material after color developing to bleach-fixing processing, characterized in that the light-sensitive silver halide color photographic material contains at least one cyan coupler represented by the formula (A), (B) or (C) as specified in the specification, or contains at least one magenta coupler represented by the formula (M-1), the bleach-fixing processing step is a step which is a counter-current system uses two or more tanks of continuous bleach-fixing tanks, and the silver concentration in the bleach-fixing solution in a final tank of the bleach-fixing tanks is maintained at 80% or lower of the silver concentration in a bleach-fixing solution in a first tank, and a method for processing a light-sensitive silver halide color photographic material by subjecting a light-sensitive silver halide color photographic material after color developing to bleach-fixing processing and then to stabilizing processing substituted for water washing, characterized in that the light-sensitive silver halide color photographic material has at least one light-sensitive emulsion layer containing a silver halide emulsion containing 0.5 mole % or more of silver iodide, the bleach-fixing processing step is a step which is a counter-current system by use of an organic acid metal complex as the oxidizing agent and uses two or more tanks of continuous bleach-fixing tanks, and the silver concentration in a final tank of the bleach-fixing tanks is maintained at 80% or lower of the silver concentration in the bleach-fixing solution in a first tank.
摘要:
There are disclosed a processing solution of a light-sensitive silver halide color photographic material, which comprises containing a compound represented by the formula (I) shown below, and a processing method of the same, which comprises subjecting a light-sensitive silver halide color photographic material having at least one layer of silver halide emulsion layer on a support to imagewise exposure and then applying processing including at least a color developing processing, characterized in that the color developing solution to be used in the color developing processing contains a compound represented by the formula (I) shown below: ##STR1## wherein R.sub.1 represents an alkyl group having 1 to 5 carbon atoms substituted with an alkoxy group, and R.sub.2 represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms or an alkyl group having 1 to 5 carbon atoms substituted with an alkoxy group, and R.sub.1 and R.sub.2 may be bonded with each other to form a ring containing an oxygen atom.
摘要:
A method for processing a silver halide photographic material by processing a silver halide color photographic light-sensitive material containing at least a silver halide emulsion layer comprising a silver halide grain essentially consisting of silver chlorobromide and a binder having a swelling rate of T 1/2 of 2 sec. to 30 sec. The color developer contains a n-hydroxyalkyl-p-phenylenediamine derivative at a temperature not less than 30.degree. C. for a time not more than 150 sec. The time and temperature are effective to process the silver halide color photographic light-sensitive material without decreasing the stability of the resulting dye image.
摘要:
A first light reflecting surface is formed at either the back side of a hub section of a transparent pointer or an hole formed in a transparent dial board and a second light reflecting surface is formed on a front side of the hub section of the pointer. Light rays transmitting entirely within the dial board in a direction parallel to the longer dimensions of the dial board are reflected toward the second light reflecting surface by the first light reflecting surface and then reflected toward the pointing section of the pointer by the second light reflecting surface to illuminate the pointer.
摘要:
A method for manufacturing a semiconductor device includes: forming a stacked body of a dielectric layer including a silicon oxide and a conductive layer including silicon above a substrate; and forming a hole penetrating through the dielectric layer and the conductive layer in the stacked body, the forming the hole including: forming a first mask layer including a silicon oxide above the stacked body; etching the conductive layer while using the first mask layer as a mask; and forming a second mask layer having more silicon content than the dielectric layer above the first mask layer to etch the dielectric layer while using the second mask layer as a mask.