公开(公告)号：US07102738B2

公开(公告)日：2006-09-05

申请号：US10665464

申请日：2003-09-22

申请人： Hiroyuki Matsuura ,  Hiroshi Ichikawa ,  Toshio Kimura ,  Takeshi Aikiyo ,  Masayoshi Seki

发明人： Hiroyuki Matsuura ,  Hiroshi Ichikawa ,  Toshio Kimura ,  Takeshi Aikiyo ,  Masayoshi Seki

IPC分类号： G01N21/00

CPC分类号： G01M11/33

摘要： A method and apparatus for inspecting a plurality of optical modules, in which the optical modules are given channel numbers, a plurality of inspection items, which are related to optical characteristics and/or electrical characteristics of the optical modules, are measured in parallel, and measurement data on the inspection items is stored in storing device. This makes it possible to inspect the optical modules efficiently in a short time, eliminating waiting time.

摘要翻译： 测量与光学模块的光学特性和/或电气特性有关的多个检查项目，其中光学模块被给予通道号的多个光学模块的并行测量方法和装置，以及 检查项目的测量数据存储在存储装置中。 这样可以在短时间内有效地检查光模块，从而消除等待时间。

公开(公告)号：US06967982B2

公开(公告)日：2005-11-22

申请号：US10322664

申请日：2002-12-19

申请人： Tsuyoshi Wakisaka ,  Naoki Tsukiji ,  Masayoshi Seki ,  Junji Yoshida ,  Yutaka Oki

发明人： Tsuyoshi Wakisaka ,  Naoki Tsukiji ,  Masayoshi Seki ,  Junji Yoshida ,  Yutaka Oki

IPC分类号： H01S5/02 ,  H01S5/042 ,  H01S5/00

CPC分类号： H01S5/0425 ,  H01L24/32 ,  H01L2224/48091 ,  H01L2924/12042 ,  H01S5/0064 ,  H01S5/02208 ,  H01S5/02272 ,  H01S5/02284 ,  H01S5/02484 ,  H01S5/183 ,  H01L2924/00014 ,  H01L2924/00

摘要： A semiconductor laser element is fixed onto a submount by forming a metallic thin film at a region on a surface of a p-side electrode of the semiconductor laser element. A periphery of the thin metallic thin film is recessed from a periphery of the p-side electrode by a predetermined width. The metallic thin film is thermally processed together with the p-side electrode for increasing a size of the grains and connected through a solder layer to the submount. Parts of the p-side electrode and the submount, the metallic thin film and the solder layer include Au for improving a cushion function of the semiconductor laser device.

摘要翻译： 通过在半导体激光元件的p侧电极的表面的区域上形成金属薄膜，将半导体激光元件固定在基台上。 薄金属薄膜的周边从p侧电极的周边凹入预定的宽度。 金属薄膜与p侧电极一起热处理，用于增加晶粒的尺寸并通过焊料层连接到底座。 p侧电极和基座的部分，金属薄膜和焊料层包括用于改善半导体激光器件的缓冲功能的Au。