公开(公告)号：US07880207B2

公开(公告)日：2011-02-01

申请号：US12350991

申请日：2009-01-09

申请人： Matthias Fertig ,  Thomas E. Morf ,  Jonas R. Weiss ,  Thomas Pflueger ,  Nikolaj Moll

发明人： Matthias Fertig ,  Thomas E. Morf ,  Jonas R. Weiss ,  Thomas Pflueger ,  Nikolaj Moll

IPC分类号： H01L31/113

CPC分类号： H01L27/14692 ,  H01L27/1462

摘要： A photo detector device comprising a first layer comprising a first material, and a second layer arranged adjacent to the first layer, the second layer comprising strained silicon, wherein the second layer further comprises a light absorption region located substantially within the strained silicon, wherein the first or the second layer is arranged on a substrate.

摘要翻译： 一种光检测器装置，包括包含第一材料的第一层和邻近第一层布置的第二层，第二层包括应变硅，其中第二层还包括基本上位于应变硅内的光吸收区，其中， 第一层或第二层被布置在基板上。

公开(公告)号：US20120206723A1

公开(公告)日：2012-08-16

申请号：US13353496

申请日：2012-01-19

申请人： Matthias Fertig ,  Thomas Morf ,  Nikolaj Moll ,  Martin Kreissig ,  Karl-Heinz Brenner ,  Maximilian Auer

发明人： Matthias Fertig ,  Thomas Morf ,  Nikolaj Moll ,  Martin Kreissig ,  Karl-Heinz Brenner ,  Maximilian Auer

IPC分类号： G01J4/04 ,  B01J19/12 ,  H01L31/0232

CPC分类号： G01J3/1804 ,  G01J4/04 ,  G02B5/1809 ,  H01L31/103

摘要： A photodiode device including a photosensitive diffusion junction within a single layer. The photodiode device further includes a resonant grating located within the single layer. The photosensitive diffusion junction is located within the resonant grating.

摘要翻译： 包括在单层内的光敏扩散结的光电二极管装置。 光电二极管装置还包括位于单层内的谐振光栅。 光敏扩散结位于谐振光栅内。

公开(公告)号：US08225241B2

公开(公告)日：2012-07-17

申请号：US12267820

申请日：2008-11-10

申请人： Matthias Fertig ,  Nikolaj Moll ,  Thomas E. Morf ,  Thomas Pflueger

发明人： Matthias Fertig ,  Nikolaj Moll ,  Thomas E. Morf ,  Thomas Pflueger

IPC分类号： G06F17/50

CPC分类号： H01L31/105 ,  B82Y20/00 ,  G02F1/015 ,  G02F1/01708 ,  G02F2001/0154 ,  G02F2201/124 ,  G02F2201/305 ,  H04N21/23424 ,  H04N21/42202 ,  H04N21/44016 ,  H04N21/44218

摘要： A method and apparatus for designing a device to operate in a coupling mode, a detection mode, or a reflection mode for incident light. The incident light has a wavelength λ and is incident upon a semiconductor structure of the device at an angle of incidence (θi). A voltage (V) is applied to the device. Each mode may be designed for an ON state and/or OFF state. For the coupling mode and detection mode, the ON state and OFF state is characterized by high and low absorption of the incident light, respectively, by the semiconductor structure in conjunction with the applied voltage V and angle of incidence θi. For the reflection mode, the OFF state and ON states is characterized by a shift in the optical path length of λ/2 and about zero, respectively, in conjunction with the applied voltage V and angle of incidences θi.

摘要翻译： 一种用于设计在入射光的耦合模式，检测模式或反射模式下工作的装置的方法和装置。 入射光具有波长λ并且以入射角入射到器件的半导体结构（I）上。 电压（V）被施加到器件。 每个模式可以被设计为ON状态和/或OFF状态。 对于耦合模式和检测模式，ON状态和OFF状态的特征在于分别由半导体结构与施加的电压V和入射角相关的入射光的高吸收和低吸收; i。 对于反射模式，关断状态和导通状态的特征在于分别与施加的电压V和发生角度的角度相关联的λ/ 2的光程长度和大约零的偏移; i。

公开(公告)号：US20090179225A1

公开(公告)日：2009-07-16

申请号：US12350991

申请日：2009-01-09

申请人： Matthias Fertig ,  Thomas E. Morf ,  Jonas R. Weiss ,  Thomas Pflueger ,  Nikolaj Moll

发明人： Matthias Fertig ,  Thomas E. Morf ,  Jonas R. Weiss ,  Thomas Pflueger ,  Nikolaj Moll

IPC分类号： H01L31/0256 ,  H01L21/20

CPC分类号： H01L27/14692 ,  H01L27/1462

摘要： A photo detector device comprising a first layer comprising a first material, and a second layer arranged adjacent to the first layer, the second layer comprising strained silicon, wherein the second layer further comprises a light absorption region located substantially within the strained silicon, wherein the first or the second layer is arranged on a substrate.

摘要翻译： 一种光检测器装置，包括包含第一材料的第一层和邻近第一层布置的第二层，第二层包括应变硅，其中第二层还包括基本上位于应变硅内的光吸收区，其中， 第一层或第二层被布置在基板上。

公开(公告)号：US20080320216A1

公开(公告)日：2008-12-25

申请号：US12142885

申请日：2008-06-20

申请人： Matthias Fertig ,  Ute Gaertner ,  Norbert Hagspiel ,  Erwin Pfeffer

发明人： Matthias Fertig ,  Ute Gaertner ,  Norbert Hagspiel ,  Erwin Pfeffer

IPC分类号： G06F12/00

CPC分类号： G06F12/1036

摘要： A program product, a translation lookaside buffer and a related method for operating the TLB is provided. The method comprises the steps of: a) when adding an entry for a virtual address to said TLB testing whether the attribute data of said virtual address is already stored in said CAM and if the attribute data is not stored already in said CAM, generating tag data for said virtual address such that said tag data is different from the tag data generated for the other virtual addresses currently stored in said RAM and associated to the new entry in said CAM for the attribute data, adding the generated tag data to said RAM and to the associated entry in said CAM, and setting a validity flag in said CAM for said associated entry; else if the attribute data is stored already in said CAM, adding the stored attribute data to the entry in said RAM for said virtual address; and when performing a TLB lookup operation: reading the validity flag and the tag data from the entry in said CAM, which is associated to the entry in said RAM for said virtual address, and simultaneously reading the absolute address and the tag data from the entry in said RAM for said virtual address, and generating a TLB hit only if the tag data read from said CAM is valid and matches the tag data read from said RAM.

摘要翻译： 提供了一种程序产品，翻译后备缓冲器和用于操作TLB的相关方法。 该方法包括以下步骤：a）当向所述TLB添加虚拟地址的条目时，测试所述虚拟地址的属性数据是否已经存储在所述CAM中，并且属性数据是否已经存储在所述CAM中，生成标签 用于所述虚拟地址的数据，使得所述标签数据不同于当前存储在所述RAM中并与所述CAM中的新条目相关联的用于属性数据的其他虚拟地址生成的标签数据，将生成的标签数据添加到所述RAM， 到所述CAM中的相关联的条目，并且在所述CAM中为所述相关联的条目设置有效标志; 否则如果属性数据已经存储在所述CAM中，则将存储的属性数据添加到用于所述虚拟地址的所述RAM中的条目; 并且当执行TLB查找操作时：从与所述RAM中的所述虚拟地址的条目相关联的所述CAM中的条目读取有效性标志和标签数据，并同时从所述条目读取绝对地址和标签数据 在所述RAM中用于所述虚拟地址，并且仅当从所述CAM读取的标签数据有效并且与从所述RAM读取的标签数据匹配时才产生TLB命中。

公开(公告)号：US08543961B2

公开(公告)日：2013-09-24

申请号：US13492964

申请日：2012-06-11

申请人： Matthias Fertig ,  Nikolaj Moll ,  Thomas E. Morf ,  Thomas Pflueger

发明人： Matthias Fertig ,  Nikolaj Moll ,  Thomas E. Morf ,  Thomas Pflueger

IPC分类号： G06F17/50

CPC分类号： H01L31/105 ,  B82Y20/00 ,  G02F1/015 ,  G02F1/01708 ,  G02F2001/0154 ,  G02F2201/124 ,  G02F2201/305 ,  H04N21/23424 ,  H04N21/42202 ,  H04N21/44016 ,  H04N21/44218

摘要： A method and apparatus for designing a device to operate in a coupling mode, a detection mode, or a reflection mode for incident light. The incident light has a wavelength λ and is incident upon a semiconductor structure of the device at an angle of incidence (θi). A voltage (V) is applied to the device. Each mode may be designed for an ON state and/or OFF state. For the coupling mode and detection mode, the ON state and OFF state is characterized by high and low absorption of the incident light, respectively, by the semiconductor structure in conjunction with the applied voltage V and angle of incidence θi. For the reflection mode, the OFF state and ON states is characterized by a shift in the optical path length of λ/2 and about zero, respectively, in conjunction with the applied voltage V and angle of incidence θi.

摘要翻译： 一种用于设计在入射光的耦合模式，检测模式或反射模式下工作的装置的方法和装置。 入射光具有波长λ，并以入射角入射到器件的半导体结构上。 电压（V）被施加到器件。 每个模式可以被设计为ON状态和/或OFF状态。 对于耦合模式和检测模式，ON状态和OFF状态的特征在于，通过半导体结构分别与入射电压V和入射角分别对入射光进行高吸收和低吸收。 对于反射模式，关闭状态和导通状态的特征在于分别与施加的电压V和入射角相关联的λ/ 2的光程长度和大约零的偏移。

公开(公告)号：US08299556B2

公开(公告)日：2012-10-30

申请号：US12632129

申请日：2009-12-07

申请人： Matthias Fertig ,  Thomas Pflueger ,  Thomas Morf ,  Nikolaj Moll

发明人： Matthias Fertig ,  Thomas Pflueger ,  Thomas Morf ,  Nikolaj Moll

IPC分类号： H01L31/0232 ,  H01L31/00 ,  H01L21/00

CPC分类号： H01L31/0687 ,  H01L25/043 ,  H01L31/02167 ,  H01L31/043 ,  H01L2924/0002 ,  Y02E10/544 ,  Y02P70/521 ,  H01L2924/00

摘要： A multi-junction opto-electronic device including a stack of wavelength selective absorption layers is proposed. The absorption layers include each a first layer with a grating of a specific pitch defining the wavelength of the incident light to be absorbed within a subjacent second electrically active layer itself on a third electrically inactive layer. The second electrically active layer within the different absorption layers is in electrical connection with lateral contacts to extract the electrical charge carriers generated by the absorbed incident light within the active layer. The grating within the first layer of the absorption layers is defined by periodic stripes of specific width depending on the wavelength to be absorbed by the respective absorption layers. The period of the stripes alignment is defined by the pitch of the grating. Advantageously, ordinary silicon technology can be used.

摘要翻译： 提出了包括一叠波长选择吸收层的多结光电子器件。 吸收层包括每个具有特定间距的光栅的第一层，其限定入射光的波长，以在第三电不活泼层上自身内的相邻的第二电活性层中被吸收。 不同吸收层内的第二电活性层与横向触点电连接以提取由活性层内的吸收的入射光产生的电荷载流子。 吸收层的第一层内的光栅由具有特定宽度的周期性条纹限定，这取决于要被各个吸收层吸收的波长。 条纹对准的周期由光栅的间距限定。 有利地，可以使用普通的硅技术。

公开(公告)号：US20120246608A1

公开(公告)日：2012-09-27

申请号：US13492964

申请日：2012-06-11

申请人： Matthias Fertig ,  Nikolaj Moll ,  Thomas E. Morf ,  Thomas Pflueger

发明人： Matthias Fertig ,  Nikolaj Moll ,  Thomas E. Morf ,  Thomas Pflueger

IPC分类号： G06F17/50

CPC分类号： H01L31/105 ,  B82Y20/00 ,  G02F1/015 ,  G02F1/01708 ,  G02F2001/0154 ,  G02F2201/124 ,  G02F2201/305 ,  H04N21/23424 ,  H04N21/42202 ,  H04N21/44016 ,  H04N21/44218

摘要： A method and apparatus for designing a device to operate in a coupling mode, a detection mode, or a reflection mode for incident light. The incident light has a wavelength λ and is incident upon a semiconductor structure of the device at an angle of incidence (θi). A voltage (V) is applied to the device. Each mode may be designed for an ON state and/or OFF state. For the coupling mode and detection mode, the ON state and OFF state is characterized by high and low absorption of the incident light, respectively, by the semiconductor structure in conjunction with the applied voltage V and angle of incidence θi. For the reflection mode, the OFF state and ON states is characterized by a shift in the optical path length of λ/2 and about zero, respectively, in conjunction with the applied voltage V and angle of incidence θi.

摘要翻译： 一种用于设计在入射光的耦合模式，检测模式或反射模式下工作的装置的方法和装置。 入射光具有波长λ并且以入射角入射到器件的半导体结构（I）上。 电压（V）被施加到器件。 每个模式可以被设计为ON状态和/或OFF状态。 对于耦合模式和检测模式，ON状态和OFF状态的特征在于分别由半导体结构与施加的电压V和入射角相关的入射光的高吸收和低吸收; i。 对于反射模式，OFF状态和ON状态的特征在于，与所施加的电压V和入射角一起分别在λ/ 2和约零的光程长度上移动; i。

公开(公告)号：US08166239B2

公开(公告)日：2012-04-24

申请号：US12142885

申请日：2008-06-20

申请人： Matthias Fertig ,  Ute Gaertner ,  Norbert Hagspiel ,  Erwin Pfeffer

发明人： Matthias Fertig ,  Ute Gaertner ,  Norbert Hagspiel ,  Erwin Pfeffer

IPC分类号： G06F12/00 ,  G06F13/00 ,  G06F13/28

CPC分类号： G06F12/1036

摘要： A program product, a translation lookaside buffer and a related method for operating the TLB is provided. The method comprises the steps of: a) when adding an entry for a virtual address to said TLB testing whether the attribute data of said virtual address is already stored in said CAM and if the attribute data is not stored already in said CAM, generating tag data for said virtual address such that said tag data is different from the tag data generated for the other virtual addresses currently stored in said RAM and associated to the new entry in said CAM for the attribute data, adding the generated tag data to said RAM and to the associated entry in said CAM, and setting a validity flag in said CAM for said associated entry; else if the attribute data is stored already in said CAM, adding the stored attribute data to the entry in said RAM for said virtual address; and when performing a TLB lookup operation: reading the validity flag and the tag data from the entry in said CAM, which is associated to the entry in said RAM for said virtual address, and simultaneously reading the absolute address and the tag data from the entry in said RAM for said virtual address, and generating a TLB hit only if the tag data read from said CAM is valid and matches the tag data read from said RAM.

摘要翻译： 提供了一种程序产品，翻译后备缓冲器和用于操作TLB的相关方法。 该方法包括以下步骤：a）当向所述TLB添加虚拟地址的条目时，测试所述虚拟地址的属性数据是否已经存储在所述CAM中，并且属性数据是否已经存储在所述CAM中，生成标签 用于所述虚拟地址的数据，使得所述标签数据不同于当前存储在所述RAM中并与所述CAM中的新条目相关联的用于属性数据的其他虚拟地址生成的标签数据，将生成的标签数据添加到所述RAM， 到所述CAM中的相关联的条目，并且在所述CAM中为所述相关联的条目设置有效标志; 否则如果属性数据已经存储在所述CAM中，则将存储的属性数据添加到用于所述虚拟地址的所述RAM中的条目; 并且当执行TLB查找操作时：从与所述RAM中的所述虚拟地址的条目相关联的所述CAM中的条目读取有效性标志和标签数据，并同时从所述条目读取绝对地址和标签数据 在所述RAM中用于所述虚拟地址，并且仅当从所述CAM读取的标签数据有效并且与从所述RAM读取的标签数据匹配时才产生TLB命中。

公开(公告)号：US08055809B2

公开(公告)日：2011-11-08

申请号：US12343594

申请日：2008-12-24

申请人： Matthias Fertig ,  Tilman Gloekler ,  Ralph C. Koester ,  Alexander Erik Mericas ,  Thomas Pflueger ,  Daniel Becker

发明人： Matthias Fertig ,  Tilman Gloekler ,  Ralph C. Koester ,  Alexander Erik Mericas ,  Thomas Pflueger ,  Daniel Becker

IPC分类号： G06F3/00

CPC分类号： G06F13/4247 ,  G06F11/3466 ,  G06F11/348 ,  G06F11/349 ,  G06F2201/88

摘要： A system and associated method for distributing signals with efficiency over a microprocessor. A performance monitoring unit (PMU) sends configuration signals to a unit to monitor an event occurring on the unit. The unit is attached to a configuration bus and an event bus that are daisy-chained from PMU to other units in the microprocessor. The configuration bus transmits configuration signals from the PMU to the unit to set the unit to report the event. The unit sends event signals to the PMU through the event bus. The unit is configured upon receiving configuration signals comprising a base address of a bus ramp of the unit. A number of units and a number of events for monitoring is flexibly selected by adjusting a length of bit fields within configuration signals.

摘要翻译： 一种用于通过微处理器分配信号的系统和相关方法。 性能监视单元（PMU）将配置信号发送到单元以监视本机发生的事件。 该单元连接到配置总线和从PMU菊花链到微处理器中的其他单元的事件总线。 配置总线将配置信号从PMU发送到单元以设置单元以报告事件。 该单元通过事件总线向PMU发送事件信号。 该单元被配置为接收到包括该单元的总线斜坡的基地址的配置信号。 通过调整配置信号中的位域的长度，可灵活选择多个单元和多个监控事件。