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公开(公告)号：US07880207B2
公开(公告)日：2011-02-01
申请号：US12350991
申请日：2009-01-09
IPC分类号： H01L31/113
CPC分类号： H01L27/14692 , H01L27/1462
摘要： A photo detector device comprising a first layer comprising a first material, and a second layer arranged adjacent to the first layer, the second layer comprising strained silicon, wherein the second layer further comprises a light absorption region located substantially within the strained silicon, wherein the first or the second layer is arranged on a substrate.
摘要翻译： 一种光检测器装置，包括包含第一材料的第一层和邻近第一层布置的第二层，第二层包括应变硅，其中第二层还包括基本上位于应变硅内的光吸收区，其中， 第一层或第二层被布置在基板上。
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公开(公告)号：US20090140362A1
公开(公告)日：2009-06-04
申请号：US12325195
申请日：2008-11-29
IPC分类号： H01L31/00
CPC分类号： H01L27/1446 , H01L31/02327
摘要： A photo detector comprising a grating (PC). The grating (PC) is arranged on top of a surface of an active semiconductor layer. The grating (PC) is patterned in uninterrupted first strips (ST1), that are arranged in a first direction (x) in a first predetermined interval (a), and second strips (ST2), that are arranged in a second direction (y) in a second predetermined interval (b). The second strips (ST2) each comprise at least one interruption in a region between each two neighboring first strips (ST1) in form of a predetermined gap (d). Positively doped regions (P) and negatively doped regions (N) each are arranged as strips in parallel with the first strips (ST1) such that in a region between each two neighboring first strips (ST1) alternately either one of the positively doped regions (P) or one of the negatively doped regions (N) is arranged.
摘要翻译： 一种光电检测器，包括光栅（PC）。 光栅（PC）布置在有源半导体层的表面的顶部。 在不间断的第一条带（ST1）中以第一预定间隔（a）中的第一方向（x）布置光栅（PC），并且沿第二方向（y ）在第二预定间隔（b）中。 第二条带（ST2）各自包括形成预定间隙（d）的每个两个相邻的第一条带（ST1）之间的区域中的至少一个中断。 正掺杂区域（P）和负掺杂区域（N）各自被布置为与第一条带（ST1）平行的条带，使得在每两个相邻的第一条带（ST1）之间的区域中交替地将任一个正掺杂区域 P）或负掺杂区域（N）之一。
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公开(公告)号：US20090179225A1
公开(公告)日：2009-07-16
申请号：US12350991
申请日：2009-01-09
IPC分类号： H01L31/0256 , H01L21/20
CPC分类号： H01L27/14692 , H01L27/1462
摘要： A photo detector device comprising a first layer comprising a first material, and a second layer arranged adjacent to the first layer, the second layer comprising strained silicon, wherein the second layer further comprises a light absorption region located substantially within the strained silicon, wherein the first or the second layer is arranged on a substrate.
摘要翻译： 一种光检测器装置，包括包含第一材料的第一层和邻近第一层布置的第二层，第二层包括应变硅，其中第二层还包括基本上位于应变硅内的光吸收区，其中， 第一层或第二层被布置在基板上。
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公开(公告)号：US07821091B2
公开(公告)日：2010-10-26
申请号：US12325195
申请日：2008-11-29
IPC分类号： H01L31/052
CPC分类号： H01L27/1446 , H01L31/02327
摘要： A photo detector comprising a grating (PC). The grating (PC) is arranged on top of a surface of an active semiconductor layer. The grating (PC) is patterned in uninterrupted first strips (ST1), that are arranged in a first direction (x) in a first predetermined interval (a), and second strips (ST2), that are arranged in a second direction (y) in a second predetermined interval (b). The second strips (ST2) each comprise at least one interruption in a region between each two neighboring first strips (ST1) in form of a predetermined gap (d). Positively doped regions (P) and negatively doped regions (N) each are arranged as strips in parallel with the first strips (ST1) such that in a region between each two neighboring first strips (ST1) alternately either one of the positively doped regions (P) or one of the negatively doped regions (N) is arranged.
摘要翻译： 一种光电检测器，包括光栅（PC）。 光栅（PC）布置在有源半导体层的表面的顶部。 在不间断的第一条带（ST1）中以第一预定间隔（a）中的第一方向（x）布置光栅（PC），并且沿第二方向（y ）在第二预定间隔（b）中。 第二条带（ST2）各自包括形成预定间隙（d）的每个两个相邻的第一条带（ST1）之间的区域中的至少一个中断。 正掺杂区域（P）和负掺杂区域（N）各自被布置为与第一条带（ST1）平行的条带，使得在每两个相邻的第一条带（ST1）之间的区域中交替地将任一个正掺杂区域 P）或负掺杂区域（N）之一。
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5.发明授权公开(公告)号：US08225241B2
公开(公告)日：2012-07-17
申请号：US12267820
申请日：2008-11-10
申请人： Matthias Fertig , Nikolaj Moll , Thomas E. Morf , Thomas Pflueger
发明人： Matthias Fertig , Nikolaj Moll , Thomas E. Morf , Thomas Pflueger
IPC分类号： G06F17/50
CPC分类号： H01L31/105 , B82Y20/00 , G02F1/015 , G02F1/01708 , G02F2001/0154 , G02F2201/124 , G02F2201/305 , H04N21/23424 , H04N21/42202 , H04N21/44016 , H04N21/44218
摘要： A method and apparatus for designing a device to operate in a coupling mode, a detection mode, or a reflection mode for incident light. The incident light has a wavelength λ and is incident upon a semiconductor structure of the device at an angle of incidence (θi). A voltage (V) is applied to the device. Each mode may be designed for an ON state and/or OFF state. For the coupling mode and detection mode, the ON state and OFF state is characterized by high and low absorption of the incident light, respectively, by the semiconductor structure in conjunction with the applied voltage V and angle of incidence θi. For the reflection mode, the OFF state and ON states is characterized by a shift in the optical path length of λ/2 and about zero, respectively, in conjunction with the applied voltage V and angle of incidences θi.
摘要翻译： 一种用于设计在入射光的耦合模式，检测模式或反射模式下工作的装置的方法和装置。 入射光具有波长λ并且以入射角入射到器件的半导体结构（I）上。 电压（V）被施加到器件。 每个模式可以被设计为ON状态和/或OFF状态。 对于耦合模式和检测模式，ON状态和OFF状态的特征在于分别由半导体结构与施加的电压V和入射角相关的入射光的高吸收和低吸收; i。 对于反射模式，关断状态和导通状态的特征在于分别与施加的电压V和发生角度的角度相关联的λ/ 2的光程长度和大约零的偏移; i。
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6.发明授权公开(公告)号：US08543961B2
公开(公告)日：2013-09-24
申请号：US13492964
申请日：2012-06-11
申请人： Matthias Fertig , Nikolaj Moll , Thomas E. Morf , Thomas Pflueger
发明人： Matthias Fertig , Nikolaj Moll , Thomas E. Morf , Thomas Pflueger
IPC分类号： G06F17/50
CPC分类号： H01L31/105 , B82Y20/00 , G02F1/015 , G02F1/01708 , G02F2001/0154 , G02F2201/124 , G02F2201/305 , H04N21/23424 , H04N21/42202 , H04N21/44016 , H04N21/44218
摘要： A method and apparatus for designing a device to operate in a coupling mode, a detection mode, or a reflection mode for incident light. The incident light has a wavelength λ and is incident upon a semiconductor structure of the device at an angle of incidence (θi). A voltage (V) is applied to the device. Each mode may be designed for an ON state and/or OFF state. For the coupling mode and detection mode, the ON state and OFF state is characterized by high and low absorption of the incident light, respectively, by the semiconductor structure in conjunction with the applied voltage V and angle of incidence θi. For the reflection mode, the OFF state and ON states is characterized by a shift in the optical path length of λ/2 and about zero, respectively, in conjunction with the applied voltage V and angle of incidence θi.
摘要翻译： 一种用于设计在入射光的耦合模式，检测模式或反射模式下工作的装置的方法和装置。 入射光具有波长λ，并以入射角入射到器件的半导体结构上。 电压（V）被施加到器件。 每个模式可以被设计为ON状态和/或OFF状态。 对于耦合模式和检测模式，ON状态和OFF状态的特征在于，通过半导体结构分别与入射电压V和入射角分别对入射光进行高吸收和低吸收。 对于反射模式，关闭状态和导通状态的特征在于分别与施加的电压V和入射角相关联的λ/ 2的光程长度和大约零的偏移。
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公开(公告)号：US20120246608A1
公开(公告)日：2012-09-27
申请号：US13492964
申请日：2012-06-11
申请人： Matthias Fertig , Nikolaj Moll , Thomas E. Morf , Thomas Pflueger
发明人： Matthias Fertig , Nikolaj Moll , Thomas E. Morf , Thomas Pflueger
IPC分类号： G06F17/50
CPC分类号： H01L31/105 , B82Y20/00 , G02F1/015 , G02F1/01708 , G02F2001/0154 , G02F2201/124 , G02F2201/305 , H04N21/23424 , H04N21/42202 , H04N21/44016 , H04N21/44218
摘要： A method and apparatus for designing a device to operate in a coupling mode, a detection mode, or a reflection mode for incident light. The incident light has a wavelength λ and is incident upon a semiconductor structure of the device at an angle of incidence (θi). A voltage (V) is applied to the device. Each mode may be designed for an ON state and/or OFF state. For the coupling mode and detection mode, the ON state and OFF state is characterized by high and low absorption of the incident light, respectively, by the semiconductor structure in conjunction with the applied voltage V and angle of incidence θi. For the reflection mode, the OFF state and ON states is characterized by a shift in the optical path length of λ/2 and about zero, respectively, in conjunction with the applied voltage V and angle of incidence θi.
摘要翻译： 一种用于设计在入射光的耦合模式，检测模式或反射模式下工作的装置的方法和装置。 入射光具有波长λ并且以入射角入射到器件的半导体结构（I）上。 电压（V）被施加到器件。 每个模式可以被设计为ON状态和/或OFF状态。 对于耦合模式和检测模式，ON状态和OFF状态的特征在于分别由半导体结构与施加的电压V和入射角相关的入射光的高吸收和低吸收; i。 对于反射模式，OFF状态和ON状态的特征在于，与所施加的电压V和入射角一起分别在λ/ 2和约零的光程长度上移动; i。
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8.发明申请METHOD AND APPARATUS FOR DESIGNING A DEVICE FOR ELECTRO-OPTICAL MODULATION OF LIGHT INCIDENT UPON THE DEVICE 有权用于设计用于电子光调制装置上的轻事件的装置的方法和装置公开(公告)号：US20100122221A1
公开(公告)日：2010-05-13
申请号：US12267820
申请日：2008-11-10
申请人： Matthias Fertig , Nikolaj Moll , Thomas E. Morf , Thomas Pflueger
发明人： Matthias Fertig , Nikolaj Moll , Thomas E. Morf , Thomas Pflueger
IPC分类号： G06F17/50
CPC分类号： H01L31/105 , B82Y20/00 , G02F1/015 , G02F1/01708 , G02F2001/0154 , G02F2201/124 , G02F2201/305 , H04N21/23424 , H04N21/42202 , H04N21/44016 , H04N21/44218
摘要： A method and apparatus for designing a device to operate in a coupling mode, a detection mode, or a reflection mode for incident light. The incident light has a wavelength λ and is incident upon a semiconductor structure of the device at an angle of incidence (θi). A voltage (V) is applied to the device. Each mode may be designed for an ON state and/or OFF state. For the coupling mode and detection mode, the ON state and OFF state is characterized by high and low absorption of the incident light, respectively, by the semiconductor structure in conjunction with the applied voltage V and angle of incidence θi. For the reflection mode, the OFF state and ON states is characterized by a shift in the optical path length of λ/2 and about zero, respectively, in conjunction with the applied voltage V and angle of incidences θi.
摘要翻译： 一种用于设计在入射光的耦合模式，检测模式或反射模式下工作的装置的方法和装置。 入射光具有波长λ并且以入射角入射到器件的半导体结构（I）上。 电压（V）被施加到器件。 每个模式可以被设计为ON状态和/或OFF状态。 对于耦合模式和检测模式，ON状态和OFF状态的特征在于分别由半导体结构与施加的电压V和入射角相关的入射光的高吸收和低吸收; i。 对于反射模式，关断状态和导通状态的特征在于分别与施加的电压V和发生角度的角度相关联的λ/ 2的光程长度和大约零的偏移; i。
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公开(公告)号：US20120314328A1
公开(公告)日：2012-12-13
申请号：US13589725
申请日：2012-08-20
申请人： Peter Dill , Thomas E. Morf , Jonas R. Weiss
发明人： Peter Dill , Thomas E. Morf , Jonas R. Weiss
IPC分类号： H02H9/04
CPC分类号： H01F27/2804 , H01F2021/125 , H01F2027/2809 , H02H9/046
摘要： An electrostatic discharge (ESD) protection device for protecting an I/O port of an electronic circuit from overvoltage and a coil structure for use in an ESD protection device. The ESD protection device includes: a plurality of inductors that are serially coupled in a line, where a node is formed between two neighboring inductors; and a plurality of protection arrangements adapted to conduct charges to one provided potential when an overvoltage is applied, where each of the protection arrangements is connected with one of the nodes, and where the serially coupled inductors are magnetically coupled with each other.
摘要翻译： 用于保护电子电路的I / O端口免受过电压的静电放电（ESD）保护装置和用于ESD保护装置的线圈结构。 ESD保护装置包括：多个电感器，其以一行的方式串联耦合，其中节点形成在两个相邻的电感器之间; 以及多个保护装置，其适于在施加过电压时将电荷传导到一个提供的电位，其中每个保护装置与节点之一连接，并且串联耦合的电感器彼此磁耦合。
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10.发明申请公开(公告)号：US20090201097A1
公开(公告)日：2009-08-13
申请号：US12369021
申请日：2009-02-11
IPC分类号： H03B5/18
CPC分类号： H03B5/1228 , H03B5/1215 , H03B5/1243 , H03B5/1256 , H03B5/1287 , H03B5/1296 , H03B2201/0216
摘要： A continuously tunable inductor with an inductive-capacitive (LC) voltage controlled oscillator (VCO) having a primary coil. The inductor includes a separate isolated secondary coil, a set of transistors composing a closed loop with the secondary coil, a magnetic coupling between the primary coil of the LC VCO and the secondary coil, an electrical coupling between the LC VCO and the set of transistors composing a closed loop with the secondary coil, and means for electric current injection into the closed loop. Such an inductor can be tuned by modulating a mutual inductance, which is magnetically and electrically coupled with the LC VCO by injection of an electric current (I0).
摘要翻译： 具有电感电容（LC）压控振荡器（VCO）的连续可调电感器，具有初级线圈。 电感器包括单独的隔离次级线圈，构成与次级线圈的闭环的一组晶体管，LC VCO的初级线圈与次级线圈之间的磁耦合，LC VCO与该组晶体管之间的电耦合 与次级线圈组成闭环，以及将电流注入闭环的装置。 可以通过调制通过注入电流（I0）与LC VCO磁耦合和电耦合的互感来调谐这种电感器。
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