公开(公告)号：US20110006285A1

公开(公告)日：2011-01-13

申请号：US12780404

申请日：2010-05-14

Applicant: Efrat LIFSHITZ ,  Ariel Kigel ,  Maya Brumer-Gilary ,  Aldona Sashchiuk ,  Lilac Amirav ,  Viktoria Kloper ,  Dima Cheskis ,  Ruth Osovsky

Inventor： Efrat LIFSHITZ ,  Ariel Kigel ,  Maya Brumer-Gilary ,  Aldona Sashchiuk ,  Lilac Amirav ,  Viktoria Kloper ,  Dima Cheskis ,  Ruth Osovsky

IPC: H01L29/66 ,  C09K11/66 ,  H01L21/20

CPC classification number: H01L29/221 ,  C09K11/025 ,  C09K11/565 ,  C09K11/661 ,  C09K11/88 ,  C09K11/883 ,  H01L21/02521 ,  H01L21/02562 ,  H01L21/02568 ,  H01L21/02601 ,  H01L29/245 ,  H01L29/26 ,  H01L31/035281 ,  Y02E10/50

Abstract: The invention relates to a core-alloyed shell semiconductor nanocrystal comprising: (i) a core of a semiconductor material having a selected band gap energy; (ii) a core-overcoating shell consisting of one or more layers comprised of an alloy of the said semiconductor of (i) and a second semiconductor; (iii) and an outer organic ligand layer, provided that the core semiconductor material is not HgTe. In certain embodiments, the core semiconductor material is PbSe and the alloy shell semiconductor material has the PbSexS1-x structure; or the core semiconductor material is CdTe and the alloy shell semiconductor material has either the CdTexSe1-x or CdTexS1-x structure.

Abstract translation: 本发明涉及一种芯 - 合金壳半导体纳米晶体，包括：（i）具有选定带隙能的半导体材料的芯; （ii）由一层或多层由（i）的所述半导体的合金和第二半导体组成的芯层外涂层; （iii）和外部有机配体层，条件是芯半导体材料不是HgTe。 在某些实施例中，芯半导体材料是PbSe，合金壳半导体材料具有PbSexS1-x结构; 或芯体半导体材料为CdTe，合金壳半导体材料具有CdTexSe1-x或CdTexS1-x结构。

公开(公告)号：US08784685B2

公开(公告)日：2014-07-22

申请号：US12780404

申请日：2010-05-14

Applicant: Efrat Lifshitz ,  Ariel Kigel ,  Maya Brumer-Gilary ,  Aldona Sashchiuk ,  Lilac Amirav ,  Viktoria Kloper ,  Dima Cheskis ,  Ruth Osovsky

Inventor： Efrat Lifshitz ,  Ariel Kigel ,  Maya Brumer-Gilary ,  Aldona Sashchiuk ,  Lilac Amirav ,  Viktoria Kloper ,  Dima Cheskis ,  Ruth Osovsky

IPC: C09K11/08 ,  C09K11/56 ,  B05D7/00

CPC classification number: H01L29/221 ,  C09K11/025 ,  C09K11/565 ,  C09K11/661 ,  C09K11/88 ,  C09K11/883 ,  H01L21/02521 ,  H01L21/02562 ,  H01L21/02568 ,  H01L21/02601 ,  H01L29/245 ,  H01L29/26 ,  H01L31/035281 ,  Y02E10/50

Abstract: The invention relates to a core-alloyed shell semiconductor nanocrystal comprising: (i) a core of a semiconductor material having a selected band gap energy; (ii) a core-overcoating shell consisting of one or more layers comprised of an alloy of the said semiconductor of (i) and a second semiconductor; (iii) and an outer organic ligand layer, provided that the core semiconductor material is not HgTe. In certain embodiments, the core semiconductor material is PbSe and the alloy shell semiconductor material has the PbSexS1-x structure; or the core semiconductor material is CdTe and the alloy shell semiconductor material has either the CdTexSe1-x or CdTexS1-x structure.

Abstract translation: 本发明涉及一种芯 - 合金壳半导体纳米晶体，包括：（i）具有选定带隙能的半导体材料的芯; （ii）由一层或多层由（i）的所述半导体的合金和第二半导体组成的芯层外涂层; （iii）和外部有机配体层，条件是芯半导体材料不是HgTe。 在某些实施例中，芯半导体材料是PbSe，合金壳半导体材料具有PbSexS1-x结构; 或芯体半导体材料为CdTe，合金壳半导体材料具有CdTexSe1-x或CdTexS1-x结构。