公开(公告)号：US20080284034A1

公开(公告)日：2008-11-20

申请号：US12215622

申请日：2008-06-27

申请人： Michael J. Leeson ,  Ebrahim Andideh

发明人： Michael J. Leeson ,  Ebrahim Andideh

IPC分类号： H01L23/48

CPC分类号： H01L21/0212 ,  H01L21/02282 ,  H01L21/31053 ,  H01L21/31058 ,  H01L21/3127 ,  H01L21/76801 ,  Y10S438/964

摘要： According to one aspect of the invention, a method of constructing a memory array is provided. An insulating layer is formed on a semiconductor wafer. A first metal stack is then formed on the insulating layer and etched to form first metal lines. A polymeric layer is formed over the first metal lines and the insulating layer. A puddle of smoothing solvent is then allowed to stand on the wafer. The smoothing solvent is then removed. After the smoothing solvent is removed, the polymeric layer has a reduced surface roughness. A second metal stack is then formed on the polymeric layer and etched to form second metal lines.

摘要翻译： 根据本发明的一个方面，提供了一种构造存储器阵列的方法。 在半导体晶片上形成绝缘层。 然后在绝缘层上形成第一金属叠层并蚀刻以形成第一金属线。 在第一金属线和绝缘层之上形成聚合物层。 然后将平滑溶剂的水坑放置在晶片上。 然后除去平滑溶剂。 在除去平滑溶剂后，聚合物层的表面粗糙度降低。 然后在聚合物层上形成第二金属叠层并蚀刻以形成第二金属线。

公开(公告)号：US06991893B2

公开(公告)日：2006-01-31

申请号：US10284662

申请日：2002-10-31

申请人： Michael D. Goodner ,  Robert P. Meagley ,  Michael J. Leeson

发明人： Michael D. Goodner ,  Robert P. Meagley ,  Michael J. Leeson

IPC分类号： G03F7/00

CPC分类号： G03F7/11 ,  G03F7/09 ,  G03F7/091 ,  G03F7/095

摘要： Photoresists may be formed over a structure that has been modified so as to poison a lower layer of the photoresist. Then, when the photoresist is patterned, it is only patterned down to the poisoned layer. The poisoned layer may be removed subsequently. However, because of the use of the modification process, the critical dimensions of the photoresist may be improved in some embodiments.

摘要翻译： 光致抗蚀剂可以形成在经过改性以便使较低层光致抗蚀剂中毒的结构上。 然后，当光致抗蚀剂被图案化时，其仅被图案化到中毒层。 中毒层可能随后被去除。 然而，由于使用了改性方法，在一些实施方案中可以改善光致抗蚀剂的临界尺寸。

公开(公告)号：US07169620B2

公开(公告)日：2007-01-30

申请号：US10676738

申请日：2003-09-30

申请人： Michael J. Leeson ,  Ebrahim Andideh

发明人： Michael J. Leeson ,  Ebrahim Andideh

IPC分类号： H01L21/00

CPC分类号： H01L21/0212 ,  H01L21/02282 ,  H01L21/31053 ,  H01L21/31058 ,  H01L21/3127 ,  H01L21/76801 ,  Y10S438/964

摘要： According to one aspect of the invention, a method of constructing a memory array is provided. An insulating layer is formed on a semiconductor wafer. A first metal stack is then formed on the insulating layer and etched to form first metal lines. A polymeric layer is formed over the first metal lines and the insulating layer. A puddle of smoothing solvent is then allowed to stand on the wafer. The smoothing solvent is then removed. After the smoothing solvent is removed, the polymeric layer has a reduced surface roughness. A second metal stack is then formed on the polymeric layer and etched to form second metal lines.

摘要翻译： 根据本发明的一个方面，提供了一种构造存储器阵列的方法。 在半导体晶片上形成绝缘层。 然后在绝缘层上形成第一金属叠层并蚀刻以形成第一金属线。 在第一金属线和绝缘层之上形成聚合物层。 然后将平滑溶剂的水坑放置在晶片上。 然后除去平滑溶剂。 在除去平滑溶剂后，聚合物层的表面粗糙度降低。 然后在聚合物层上形成第二金属叠层并蚀刻以形成第二金属线。

公开(公告)号：US5654531A

公开(公告)日：1997-08-05

申请号：US511833

申请日：1995-08-07

申请人： Larry A. Farabee ,  Michael J. Leeson

发明人： Larry A. Farabee ,  Michael J. Leeson

IPC分类号： B66B1/18 ,  B66B5/02 ,  G05B19/042 ,  H04L12/40 ,  H04L29/14 ,  B66B1/28 ,  H04J1/16

CPC分类号： H04L12/403 ,  B66B1/18 ,  B66B5/0031 ,  G05B19/042 ,  H04L69/40 ,  G05B2219/25163 ,  G05B2219/25218 ,  G05B2219/2659 ,  H04L2012/40273

摘要： An elevator system comprises a plurality of cars, and a group controller. A pair of multidrop communication links are connected with the cars such that, absent a communication break, a datagram transmitted by any car controller onto either link may be received by any or all of the remaining car controllers. Each car controller includes means for designating a primary link for each of the remaining cars, and means for rebroadcasting datagrams intended for another car on the primary link only when the datagram is received on a link other than the primary link.Preferably, each controller includes a means to determine when communications with another car, over the primary link, have been disrupted, and to switch the designation of primary link accordingly. In the preferred embodiment, a timer means is associated with each car, which is reset each time the car receives a datagram originating from that car. If the timer expires, and subsequently the car receives a datagram from such car over another link, it resets the primary link.The group controller may be a separate component of the system, but preferably all the car controllers have group controller software.

摘要翻译： 电梯系统包括多个轿厢和组控制器。 一对多点通信链路与轿厢连接，使得在没有通信中断的情况下，任何一个或多个剩余的汽车控制器可以接收由任何一个汽车控制器发送到任一链路上的数据报。 每个汽车控制器包括用于指定每个剩余汽车的主要链路的装置，以及仅当在除主链路之外的链路上接收到数据报时才重新广播用于主链路上的另一汽车的数据报的装置。 优选地，每个控制器包括一个装置，用于确定何时与另一个汽车在主链路上的通信已被中断，并相应地切换主链路的指定。 在优选实施例中，定时器装置与每个轿厢相关联，每当轿厢接收到来自该轿厢的数据报时，该装置被重新设置。 如果定时器到期，随后汽车从另一个链路接收到来自这样的汽车的数据报，则它重置主链路。 组控制器可以是系统的单独部件，但是优选地，所有的汽车控制器都具有组控制器软件。

公开(公告)号：US07427559B2

公开(公告)日：2008-09-23

申请号：US11604948

申请日：2006-11-27

申请人： Michael J. Leeson ,  Ebrahim Andideh

发明人： Michael J. Leeson ,  Ebrahim Andideh

IPC分类号： H01L21/4763

CPC分类号： H01L21/0212 ,  H01L21/02282 ,  H01L21/31053 ,  H01L21/31058 ,  H01L21/3127 ,  H01L21/76801 ,  Y10S438/964

摘要： According to one aspect of the invention, a method of constructing a memory array is provided. An insulating layer is formed on a semiconductor wafer. A first metal stack is then formed on the insulating layer and etched to form first metal lines. A polymeric layer is formed over the first metal lines and the insulating layer. A puddle of smoothing solvent is then allowed to stand on the wafer. The smoothing solvent is then removed. After the smoothing solvent is removed, the polymeric layer has a reduced surface roughness. A second metal stack is then formed on the polymeric layer and etched to form second metal lines.

公开(公告)号：US20080076058A1

公开(公告)日：2008-03-27

申请号：US11502916

申请日：2006-08-11

申请人： Michael J. Leeson ,  Heidi B. Cao ,  Wang Yueh ,  Jeanette M. Roberts

发明人： Michael J. Leeson ,  Heidi B. Cao ,  Wang Yueh ,  Jeanette M. Roberts

IPC分类号： G03F7/004

CPC分类号： G03F7/0045 ,  G03F7/2022 ,  G03F7/38

摘要： A photoresist composition (phosphoresist) including a resist capable of activation when exposed to electromagnetic energy within a first bandwidth, but relatively insensitive to electromagnetic energy within a second bandwidth and a third bandwidth, and also including a phosphor material included in the photoresist and capable of activation when exposed to electromagnetic energy within the second bandwidth. Photo-luminescent centers included in the phosphoresist are associated with the phosphor material and are capable of emitting luminescence within the first bandwidth in response to exposure to electromagnetic energy within the third bandwidth. The phosphoresist may be disposed as a relatively thin and uniform layer at a surface of a substrate, such as a semiconductor substrate.

摘要翻译： 一种光致抗蚀剂组合物（磷光阻剂），其包括当在第一带宽内暴露于电磁能量时能够激活但在第二带宽和第三带宽内对电磁能量相对不敏感的抗蚀剂，并且还包括包含在光致抗蚀剂中的磷光体材料， 在第二个带宽内暴露于电磁能时激活。 包含在磷光抗蚀剂中的光致发光中心与磷光体材料相关联并且能够响应于在第三带宽内的电磁能量的暴露而在第一带宽内发射发光。 磷光阻剂可以在诸如半导体衬底的衬底的表面处设置为相对薄且均匀的层。

公开(公告)号：US07241707B2

公开(公告)日：2007-07-10

申请号：US11060843

申请日：2005-02-17

申请人： Robert P. Meagley ,  Michael J. Leeson ,  Michael D. Goodner ,  Bob E. Leet ,  Michael L. McSwiney ,  Shan C. Clark

发明人： Robert P. Meagley ,  Michael J. Leeson ,  Michael D. Goodner ,  Bob E. Leet ,  Michael L. McSwiney ,  Shan C. Clark

IPC分类号： H01L21/469

CPC分类号： H01L21/76808 ,  G03F7/091 ,  H01L21/0276 ,  H01L21/31144 ,  H01L21/76822 ,  H01L21/76829 ,  H01L21/76834 ,  H01L21/76835

摘要： Multiple-layer films in integrated circuit processing may be formed by the phase segregation of a single composition formed above a semiconductor substrate. The composition is then induced to phase segregate into at least a first continuous phase and a second continuous phase. The composition may be formed of two or more components that phase segregate into different continuous layers. The composition may also be a single component that breaks down upon activation into two or more components that phase segregate into different continuous layers. Phase segregation may be used to form, for example, a sacrificial light absorbing material (SLAM) and a developer resistant skin, a dielectric layer and a hard mask, a photoresist and an anti-reflective coating (ARC), a stress buffer coating and a protective layer on a substrate package, and light interference layers.

摘要翻译： 集成电路处理中的多层膜可以通过在半导体衬底上形成的单一组合物的相分离来形成。 然后将组合物诱导相分离成至少第一连续相和第二连续相。 组合物可以由相分离成不同连续层的两种或更多种组分形成。 组合物还可以是单一组分，其在活化时分解成两个或多个相分离成不同连续层的组分。 相分离可以用于形成例如牺牲光吸收材料（SLAM）和显影剂抗性皮肤，电介质层和硬掩模，光致抗蚀剂和抗反射涂层（ARC），应力缓冲涂层和 衬底封装上的保护层，以及光干涉层。

公开(公告)号：US07800203B2

公开(公告)日：2010-09-21

申请号：US12215622

申请日：2008-06-27

申请人： Michael J. Leeson ,  Ebrahim Andideh

发明人： Michael J. Leeson ,  Ebrahim Andideh

IPC分类号： H01L21/4763

CPC分类号： H01L21/0212 ,  H01L21/02282 ,  H01L21/31053 ,  H01L21/31058 ,  H01L21/3127 ,  H01L21/76801 ,  Y10S438/964

摘要： According to one aspect of the invention, a method of constructing a memory array is provided. An insulating layer is formed on a semiconductor wafer. A first metal stack is then formed on the insulating layer and etched to form first metal lines. A polymeric layer is formed over the first metal lines and the insulating layer. A puddle of smoothing solvent is then allowed to stand on the wafer. The smoothing solvent is then removed. After the smoothing solvent is removed, the polymeric layer has a reduced surface roughness. A second metal stack is then formed on the polymeric layer and etched to form second metal lines.

摘要翻译： 根据本发明的一个方面，提供了一种构造存储器阵列的方法。 在半导体晶片上形成绝缘层。 然后在绝缘层上形成第一金属叠层并蚀刻以形成第一金属线。 在第一金属线和绝缘层之上形成聚合物层。 然后将平滑溶剂的水坑放置在晶片上。 然后除去平滑溶剂。 在除去平滑溶剂后，聚合物层的表面粗糙度降低。 然后在聚合物层上形成第二金属叠层并蚀刻以形成第二金属线。