公开(公告)号：US07892975B2

公开(公告)日：2011-02-22

申请号：US11688684

申请日：2007-03-20

Applicant: Eiichi Kondoh ,  Michiru Hirose ,  Hitoshi Tanaka ,  Masayuki Satoh ,  Hisashi Yano ,  Masaki Yoshimaru

Inventor： Eiichi Kondoh ,  Michiru Hirose ,  Hitoshi Tanaka ,  Masayuki Satoh ,  Hisashi Yano ,  Masaki Yoshimaru

IPC: H01L21/441

CPC classification number: H01L21/76879 ,  C23C18/1216 ,  C23C18/1279 ,  C23C18/1283 ,  H01L21/288 ,  H01L23/53257 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for selectively forming an electric conductor, the method including disposing a processing target and a metal compound in an atmosphere including a supercritical fluid, the processing target having formed thereon at least one recess for providing an electric conductor, the metal compound including a metal serving as a main component of the electric conductor, and dissolving at least part of the metal compound in the supercritical fluid, selectively introducing the metal compound dissolved in the supercritical fluid into the recess in contact with a surface of the processing target, and coagulating in the recess the metal compound introduced into the recess to precipitate the metal from the metal compound, and coagulating the metal precipitated in the recess, thereby providing the electric conductor in the recess.

Abstract translation: 一种用于选择性地形成电导体的方法，所述方法包括在包括超临界流体的气氛中设置处理对象和金属化合物，所述处理对象在其上形成有至少一个用于提供导电体的凹部，所述金属化合物包括金属 作为电导体的主要成分，将至少一部分金属化合物溶解在超临界流体中，选择性地将溶解在超临界流体中的金属化合物导入到与加工对象的表面接触的凹部中， 所述金属化合物引入所述凹部中以将所述金属从所述金属化合物中沉淀出来并将所述金属凝结在所述凹部中沉淀，由此在所述凹部中提供所述电导体。

公开(公告)号：US20080206949A1

公开(公告)日：2008-08-28

申请号：US11845615

申请日：2007-08-27

Applicant: Eiichi Kondoh ,  Michiru Hirose ,  Hitoshi Tanaka ,  Masayuki Satoh ,  Hisashi Yano ,  Masaki Yoshimaru

Inventor： Eiichi Kondoh ,  Michiru Hirose ,  Hitoshi Tanaka ,  Masayuki Satoh ,  Hisashi Yano ,  Masaki Yoshimaru

IPC: H01L21/44 ,  B05C11/00

CPC classification number: H01L21/283 ,  C23C18/06 ,  C23C18/08 ,  H01L21/76879

Abstract: A conductor forming apparatus includes a reaction container having housed therein a processing target on a surface of which a recess in which a conductor is to be provided is formed, and a process for providing the conductor in the recess being carried out inside the container after a supercritical fluid dissolved with a metal compound is supplied into the container, a supply device which supplies the fluid from an outside to the inside of the container, and a discharge device which discharges the fluid that is not submitted for the process from the inside to the outside of the container, wherein while an amount of the fluid in the container is adjusted by continuously supplying the fluid into the container by the supply device and continuously discharging the fluid that is not submitted for the process to the outside of the container by the discharge device.

Abstract translation: 导体形成装置包括反应容器，其中容纳有处理目标，其表面上形成有要在其中设置导体的凹部，并且在凹部中提供导体的过程在容器内部被执行 将与金属化合物一起溶解的超临界流体供给到容器内，从外部向容器内部供给流体的供给装置以及将未从内部排出的流体从内部排出到 在容器外部，其中通过由供应装置连续地将流体供给到容器中并且通过排出物将不被处理的流体连续排出到容器的外部来调节容器中的流体的量 设备。

公开(公告)号：US20100112776A1

公开(公告)日：2010-05-06

申请号：US12685408

申请日：2010-01-11

Applicant: Eiichi Kondoh ,  Michiru Hirose ,  Hitoshi Tanaka ,  Masayuki Satoh ,  Hisashi Yano ,  Masaki Yoshimaru

Inventor： Eiichi Kondoh ,  Michiru Hirose ,  Hitoshi Tanaka ,  Masayuki Satoh ,  Hisashi Yano ,  Masaki Yoshimaru

IPC: H01L21/02 ,  B05D5/12

CPC classification number: H01L21/283 ,  C23C18/06 ,  C23C18/08 ,  H01L21/76879

Abstract: A conductor forming apparatus includes a reaction container having housed therein a processing target on a surface of which a recess in which a conductor is to be provided is formed, and a process for providing the conductor in the recess being carried out inside the container after a supercritical fluid dissolved with a metal compound is supplied into the container, a supply device which supplies the fluid from an outside to the inside of the container, and a discharge device which discharges the fluid that is not submitted for the process from the inside to the outside of the container, wherein while an amount of the fluid in the container is adjusted by continuously supplying the fluid into the container by the supply device and continuously discharging the fluid that is not submitted for the process to the outside of the container by the discharge device.

Abstract translation: 导体形成装置包括反应容器，其中容纳有处理目标，其表面上形成有要在其中设置导体的凹部，并且在凹部中提供导体的过程在容器内部被执行 将与金属化合物一起溶解的超临界流体供给到容器内，从外部向容器内部供给流体的供给装置以及将未从内部排出的流体从内部排出到 在容器外部，其中通过由供应装置连续地将流体供给到容器中并且通过排出物将不被处理的流体连续排出到容器的外部来调节容器中的流体的量 设备。

公开(公告)号：US20080233705A1

公开(公告)日：2008-09-25

申请号：US11688684

申请日：2007-03-20

Applicant: Eiichi Kondoh ,  Michiru Hirose ,  Hitoshi Tanaka ,  Masayuki Satoh ,  Hisashi Yano ,  Masaki Yoshimaru

Inventor： Eiichi Kondoh ,  Michiru Hirose ,  Hitoshi Tanaka ,  Masayuki Satoh ,  Hisashi Yano ,  Masaki Yoshimaru

IPC: H01L21/20

CPC classification number: H01L21/76879 ,  C23C18/1216 ,  C23C18/1279 ,  C23C18/1283 ,  H01L21/288 ,  H01L23/53257 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for selectively forming an electric conductor, the method including disposing a processing target and a metal compound in an atmosphere including a supercritical fluid, the processing target having formed thereon at least one recess for providing an electric conductor, the metal compound including a metal serving as a main component of the electric conductor, and dissolving at least part of the metal compound in the supercritical fluid, selectively introducing the metal compound dissolved in the supercritical fluid into the recess in contact with a surface of the processing target, and coagulating in the recess the metal compound introduced into the recess to precipitate the metal from the metal compound, and coagulating the metal precipitated in the recess, thereby providing the electric conductor in the recess.

Abstract translation: 一种用于选择性地形成电导体的方法，所述方法包括在包括超临界流体的气氛中设置处理对象和金属化合物，所述处理对象在其上形成有至少一个用于提供导电体的凹部，所述金属化合物包括金属 作为电导体的主要成分，将至少一部分金属化合物溶解在超临界流体中，选择性地将溶解在超临界流体中的金属化合物导入到与加工对象的表面接触的凹部中， 所述金属化合物引入所述凹部中以将所述金属从所述金属化合物中沉淀出来并将所述金属凝结在所述凹部中沉淀，由此在所述凹部中提供所述电导体。