公开(公告)号：US20100112776A1

公开(公告)日：2010-05-06

申请号：US12685408

申请日：2010-01-11

申请人： Eiichi Kondoh ,  Michiru Hirose ,  Hitoshi Tanaka ,  Masayuki Satoh ,  Hisashi Yano ,  Masaki Yoshimaru

发明人： Eiichi Kondoh ,  Michiru Hirose ,  Hitoshi Tanaka ,  Masayuki Satoh ,  Hisashi Yano ,  Masaki Yoshimaru

IPC分类号： H01L21/02 ,  B05D5/12

CPC分类号： H01L21/283 ,  C23C18/06 ,  C23C18/08 ,  H01L21/76879

摘要： A conductor forming apparatus includes a reaction container having housed therein a processing target on a surface of which a recess in which a conductor is to be provided is formed, and a process for providing the conductor in the recess being carried out inside the container after a supercritical fluid dissolved with a metal compound is supplied into the container, a supply device which supplies the fluid from an outside to the inside of the container, and a discharge device which discharges the fluid that is not submitted for the process from the inside to the outside of the container, wherein while an amount of the fluid in the container is adjusted by continuously supplying the fluid into the container by the supply device and continuously discharging the fluid that is not submitted for the process to the outside of the container by the discharge device.

摘要翻译： 导体形成装置包括反应容器，其中容纳有处理目标，其表面上形成有要在其中设置导体的凹部，并且在凹部中提供导体的过程在容器内部被执行 将与金属化合物一起溶解的超临界流体供给到容器内，从外部向容器内部供给流体的供给装置以及将未从内部排出的流体从内部排出到 在容器外部，其中通过由供应装置连续地将流体供给到容器中并且通过排出物将不被处理的流体连续排出到容器的外部来调节容器中的流体的量 设备。

公开(公告)号：US20080233705A1

公开(公告)日：2008-09-25

申请号：US11688684

申请日：2007-03-20

申请人： Eiichi Kondoh ,  Michiru Hirose ,  Hitoshi Tanaka ,  Masayuki Satoh ,  Hisashi Yano ,  Masaki Yoshimaru

发明人： Eiichi Kondoh ,  Michiru Hirose ,  Hitoshi Tanaka ,  Masayuki Satoh ,  Hisashi Yano ,  Masaki Yoshimaru

IPC分类号： H01L21/20

CPC分类号： H01L21/76879 ,  C23C18/1216 ,  C23C18/1279 ,  C23C18/1283 ,  H01L21/288 ,  H01L23/53257 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for selectively forming an electric conductor, the method including disposing a processing target and a metal compound in an atmosphere including a supercritical fluid, the processing target having formed thereon at least one recess for providing an electric conductor, the metal compound including a metal serving as a main component of the electric conductor, and dissolving at least part of the metal compound in the supercritical fluid, selectively introducing the metal compound dissolved in the supercritical fluid into the recess in contact with a surface of the processing target, and coagulating in the recess the metal compound introduced into the recess to precipitate the metal from the metal compound, and coagulating the metal precipitated in the recess, thereby providing the electric conductor in the recess.

摘要翻译： 一种用于选择性地形成电导体的方法，所述方法包括在包括超临界流体的气氛中设置处理对象和金属化合物，所述处理对象在其上形成有至少一个用于提供导电体的凹部，所述金属化合物包括金属 作为电导体的主要成分，将至少一部分金属化合物溶解在超临界流体中，选择性地将溶解在超临界流体中的金属化合物导入到与加工对象的表面接触的凹部中， 所述金属化合物引入所述凹部中以将所述金属从所述金属化合物中沉淀出来并将所述金属凝结在所述凹部中沉淀，由此在所述凹部中提供所述电导体。

公开(公告)号：US07892975B2

公开(公告)日：2011-02-22

申请号：US11688684

申请日：2007-03-20

申请人： Eiichi Kondoh ,  Michiru Hirose ,  Hitoshi Tanaka ,  Masayuki Satoh ,  Hisashi Yano ,  Masaki Yoshimaru

发明人： Eiichi Kondoh ,  Michiru Hirose ,  Hitoshi Tanaka ,  Masayuki Satoh ,  Hisashi Yano ,  Masaki Yoshimaru

IPC分类号： H01L21/441

CPC分类号： H01L21/76879 ,  C23C18/1216 ,  C23C18/1279 ,  C23C18/1283 ,  H01L21/288 ,  H01L23/53257 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method for selectively forming an electric conductor, the method including disposing a processing target and a metal compound in an atmosphere including a supercritical fluid, the processing target having formed thereon at least one recess for providing an electric conductor, the metal compound including a metal serving as a main component of the electric conductor, and dissolving at least part of the metal compound in the supercritical fluid, selectively introducing the metal compound dissolved in the supercritical fluid into the recess in contact with a surface of the processing target, and coagulating in the recess the metal compound introduced into the recess to precipitate the metal from the metal compound, and coagulating the metal precipitated in the recess, thereby providing the electric conductor in the recess.

摘要翻译： 一种用于选择性地形成电导体的方法，所述方法包括在包括超临界流体的气氛中设置处理对象和金属化合物，所述处理对象在其上形成有至少一个用于提供导电体的凹部，所述金属化合物包括金属 作为电导体的主要成分，将至少一部分金属化合物溶解在超临界流体中，选择性地将溶解在超临界流体中的金属化合物导入到与加工对象的表面接触的凹部中， 所述金属化合物引入所述凹部中以将所述金属从所述金属化合物中沉淀出来并将所述金属凝结在所述凹部中沉淀，由此在所述凹部中提供所述电导体。

公开(公告)号：US20080206949A1

公开(公告)日：2008-08-28

申请号：US11845615

申请日：2007-08-27

申请人： Eiichi Kondoh ,  Michiru Hirose ,  Hitoshi Tanaka ,  Masayuki Satoh ,  Hisashi Yano ,  Masaki Yoshimaru

发明人： Eiichi Kondoh ,  Michiru Hirose ,  Hitoshi Tanaka ,  Masayuki Satoh ,  Hisashi Yano ,  Masaki Yoshimaru

IPC分类号： H01L21/44 ,  B05C11/00

CPC分类号： H01L21/283 ,  C23C18/06 ,  C23C18/08 ,  H01L21/76879

摘要： A conductor forming apparatus includes a reaction container having housed therein a processing target on a surface of which a recess in which a conductor is to be provided is formed, and a process for providing the conductor in the recess being carried out inside the container after a supercritical fluid dissolved with a metal compound is supplied into the container, a supply device which supplies the fluid from an outside to the inside of the container, and a discharge device which discharges the fluid that is not submitted for the process from the inside to the outside of the container, wherein while an amount of the fluid in the container is adjusted by continuously supplying the fluid into the container by the supply device and continuously discharging the fluid that is not submitted for the process to the outside of the container by the discharge device.

摘要翻译： 导体形成装置包括反应容器，其中容纳有处理目标，其表面上形成有要在其中设置导体的凹部，并且在凹部中提供导体的过程在容器内部被执行 将与金属化合物一起溶解的超临界流体供给到容器内，从外部向容器内部供给流体的供给装置以及将未从内部排出的流体从内部排出到 在容器外部，其中通过由供应装置连续地将流体供给到容器中并且通过排出物将不被处理的流体连续排出到容器的外部来调节容器中的流体的量 设备。

公开(公告)号：US20060121307A1

公开(公告)日：2006-06-08

申请号：US11250532

申请日：2005-10-17

申请人： Koumei Matsuzawa ,  Hiroshi Sato ,  Takayuki Komiya ,  Eiichi Kondoh ,  Kenji Matsumoto

发明人： Koumei Matsuzawa ,  Hiroshi Sato ,  Takayuki Komiya ,  Eiichi Kondoh ,  Kenji Matsumoto

IPC分类号： C23C16/00 ,  B32B15/00 ,  C23C14/32

CPC分类号： H01L21/288 ,  C23C18/04 ,  C23C18/08 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76877 ,  Y10T428/12819 ,  Y10T428/12903

摘要： In a film deposition method which forms a Cu film on a Cu diffusion preventing film formed on a substrate, a contact film which is provided for adhering the Cu film to the Cu diffusion preventing film is formed on the Cu diffusion preventing film. A processing medium in which a precursor is dissolved in a medium of a supercritical state is supplied to the substrate so that the Cu film is formed on the contact film.

摘要翻译： 在形成在基板上的Cu扩散防止膜上形成Cu膜的成膜方法中，在Cu扩散防止膜上形成有将Cu膜附着在Cu扩散防止膜上的接触膜。 将前体溶解在超临界状态的介质中的处理介质供给到基板，使得在接触膜上形成Cu膜。

公开(公告)号：US20060084266A1

公开(公告)日：2006-04-20

申请号：US11252795

申请日：2005-10-19

申请人： Masaki Narushima ,  Koumei Matsuzawa ,  Hiroshi Sato ,  Takayuki Komiya ,  Eiichi Kondoh

发明人： Masaki Narushima ,  Koumei Matsuzawa ,  Hiroshi Sato ,  Takayuki Komiya ,  Eiichi Kondoh

IPC分类号： H01L21/44

CPC分类号： H01L21/76877 ,  C23C18/161 ,  C23C18/1678 ,  C23C18/168 ,  C23C18/1682 ,  C23C18/1685 ,  C23C18/40 ,  H01L21/28556 ,  H01L21/288

摘要： A film formation method of forming a film on a fine-pattern by supplying a processing medium that is in the supercritical state in which a precursor is dissolved on a target substrate is disclosed. The film formation method includes a first process of supplying the processing medium on the target substrate, the temperature of which is set at a first temperature that is lower than a film formation minimum temperature that is the lowest temperature at which film formation takes place, and a second process of forming the film on the target substrate by raising the temperature of the target substrate from the first temperature to a second temperature that is higher than the film formation minimum temperature.

摘要翻译： 公开了一种通过在目标基板上提供处于前体被溶解的超临界状态的处理介质，在微细图案上形成薄膜的成膜方法。 成膜方法包括：将目标基板上的处理介质供给到第一温度的第一工序，该第一工序的温度设定在低于成膜的最低温度的成膜最低温度的第一温度，以及 通过将目标基板的温度从第一温度升高到高于成膜最低温度的第二温度，在目标基板上形成膜的第二工序。

公开(公告)号：US5627102A

公开(公告)日：1997-05-06

申请号：US569319

申请日：1995-12-08

申请人： Hiroshi Shinriki ,  Takeshi Kaizuka ,  Nobuyuki Takeyasu ,  Tomohiro Ohta ,  Eiichi Kondoh ,  Hiroshi Yamamoto ,  Tomoharu Katagiri ,  Tadashi Nakano ,  Yumiko Kawano

发明人： Hiroshi Shinriki ,  Takeshi Kaizuka ,  Nobuyuki Takeyasu ,  Tomohiro Ohta ,  Eiichi Kondoh ,  Hiroshi Yamamoto ,  Tomoharu Katagiri ,  Tadashi Nakano ,  Yumiko Kawano

IPC分类号： H01L21/285 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/28

CPC分类号： H01L21/76838 ,  H01L21/28556 ,  H01L21/32136 ,  H01L21/76843 ,  H01L21/76856 ,  H01L21/76865 ,  H01L21/76877 ,  H01L23/53223 ,  H01L2924/0002

摘要： A metal interconnection is prepared by forming an underlying metal film of high melting point metal such as Ti and/or high melting point metal compound such as TiN layers above a semiconductor substrate, plasma etching the surface of the underlying metal film in a gas atmosphere containing chloride, and forming an interconnecting metal film such as Al, Cu, Au and Ag on the underlying metal film. Alternatively, a metal interconnection is prepared by forming an insulating film above a semiconductor substrate, forming connection holes in the insulating film, forming an underlying metal film such as TiN on the insulating film and the bottom and side wall of the connection holes by a CVD process under controlled conditions, and forming an interconnecting metal film such as Al on the underlying metal film. The TiN film has (111) preferential orientation and the aluminum film has (111) preferential orientation, smooth surface and effective coverage. The thus fabricated metal interconnection has improved reliability including electromigration immunity when used in semiconductor devices and finding advantageous use in miniaturized semiconductor devices.

摘要翻译： 通过在半导体衬底之上形成诸如Ti和/或高熔点金属化合物如TiN层的高熔点金属的下面的金属膜，在等离子体中蚀刻下面的金属膜的表面，在含有 并在下面的金属膜上形成诸如Al，Cu，Au和Ag的互连金属膜。 或者，通过在半导体衬底上形成绝缘膜，在绝缘膜上形成连接孔，通过CVD在绝缘膜上形成TiN等下面的金属膜，形成连接孔的底壁和侧壁，形成金属互连 在控制条件下进行处理，并在底层金属膜上形成互连金属膜如Al。 TiN膜具有（111）优先取向，铝膜具有（111）优先取向，表面光滑，有效覆盖。 如此制造的金属互连具有改进的可靠性，包括当用于半导体器件中的电迁移抗扰性并且在小型化的半导体器件中发现有利的用途。

公开(公告)号：US07450580B2

公开(公告)日：2008-11-11

申请号：US10323652

申请日：2002-12-20

申请人： Wataru Itonaga ,  Eiichi Kondoh

发明人： Wataru Itonaga ,  Eiichi Kondoh

IPC分类号： H04L12/28 ,  H04J3/26 ,  G06F15/16 ,  G06F15/173

CPC分类号： H04L65/4076 ,  H04L12/18 ,  H04L29/06 ,  H04L29/06027 ,  H04L65/80 ,  H04L67/322 ,  H04L69/329

摘要： An application-layer multicast (ALM) system allowing high-speed ALM with precise routing control and simplified configuration. The routing control and data copying are separately performed with different hardware circuits: routing controller; and data copying device. The routing control is performed on the CPU of a computer, whereas the data copying is performed on a dedicated hardware circuit. This separate structure is employed in each intermediate node in the ALM network. The data copying device communicates with the routing controller within the same segment to manage the content data to be relayed by the intermediate system using a management ID uniquely assigned to the content data within the segment.

摘要翻译： 应用层组播（ALM）系统允许高速ALM，具有精确的路由控制和简化配置。 路由控制和数据复制分别用不同的硬件电路执行：路由控制器; 和数据复制装置。 在计算机的CPU上执行路由控制，而在专用硬件电路上进行数据复制。 在ALM网络中的每个中间节点都采用这种单独的结构。 数据复制装置与同一分段内的路由选择控制器进行通信，通过使用唯一分配给分段内的内容数据的管理ID来管理由中间系统中继的内容数据。

公开(公告)号：US20070134602A1

公开(公告)日：2007-06-14

申请号：US11610131

申请日：2006-12-13

申请人： Kenji Matsumoto ,  Takayuki Komiya ,  Eiichi Kondoh

发明人： Kenji Matsumoto ,  Takayuki Komiya ,  Eiichi Kondoh

IPC分类号： G03C5/16

CPC分类号： C23C18/02

摘要： A high-pressure processing apparatus is used for performing a film formation process on a target object, while using a process fluid containing a high-pressure fluid and a film formation source material. The apparatus includes a pressure tight container defining a process field for accommodating the target object, and configured to withstand a pressure applied from the high-pressure fluid. The pressure tight container is made of a first material. A support member is disposed inside the pressure tight container to support the target object. A fluid supply system is configured to supply the process fluid onto the target object. A thermally shielding layer is disposed to cover a surface of the pressure tight container defining the process field. The thermally shielding layer is made of a second material having a thermal conductivity higher than that of the first material.

摘要翻译： 在使用包含高压流体和成膜源材料的工艺流体的同时，使用高压处理装置对目标物体进行成膜处理。 该装置包括限定用于容纳目标物体的过程场的压力容器，并且被配置为承受从高压流体施加的压力。 耐压容器由第一材料制成。 支撑构件设置在耐压容器内部以支撑目标物体。 流体供应系统被配置为将过程流体供应到目标物体上。 热屏蔽层设置成覆盖限定过程场的压力容器的表面。 热屏蔽层由导热率高于第一材料的第二材料制成。

公开(公告)号：US5552181A

公开(公告)日：1996-09-03

申请号：US170789

申请日：1993-12-21

申请人： Eiichi Kondoh ,  Toru Mitomo ,  Hiroshi Yamamoto ,  Tomohiro Ohta

发明人： Eiichi Kondoh ,  Toru Mitomo ,  Hiroshi Yamamoto ,  Tomohiro Ohta

IPC分类号： C23C16/20 ,  C23C16/448 ,  H01L21/205 ,  H01L21/31 ,  H01L21/3205 ,  H01L23/52 ,  C23C16/00

CPC分类号： C23C16/4482

摘要： A method of supplying, in a gaseous phase, a material which is in a viscous liquid phase at normal temperature. The viscous liquid material is provided in a bubbler and the pressure of the vessel is maintained below atmospheric pressure. A carrier gas is supplied through a nozzle opening in the liquid material inside the vessel. The carrier gas is temporarily dissolved in the liquid and then released to form fine bubbles into which the liquid material is vaporized, so that the vapor of the material is supplied together with the carrier gas.

摘要翻译： 在气相中以常温下处于粘稠液相的材料的方法。 将粘性液体材料设置在起泡器中，并将容器的压力保持在大气压以下。 载气通过容器内的液体材料中的喷嘴开口供给。 载气暂时溶解在液体中，然后释放，形成液体物质蒸发的微小气泡，使得材料的蒸气与载气一起供给。