摘要:
The present invention provides a circuit and a method for the full speed testing of semiconductor memory chips. The invention provides a full-speed data transition scheme for double data rate (DDR) synchronous dynamic random access memory (SDRAM). For high speed or double speed stress testing of DDR SDRAM, the internal clock is double the speed of the external clock. During high speed test, this causes the data to be written or presented to the data path two times. This invention provides a circuit and method for creating a full-speed data transition scheme to overcome this double speed testing problem.
摘要:
The present invention provides a circuit and a method for the full speed testing of semiconductor memory chips. The invention provides a full-speed data transition scheme for double data rate (DDR) synchronous dynamic random access memory (SDRAM). For high speed or double speed stress testing of DDR SDRAM, the internal clock is double the speed of the external clock. During high speed test, this causes the data to be written or presented to the data path two times. This invention provides a circuit and method for creating a full-speed data transition scheme to overcome this double speed testing problem.
摘要:
A circuit and a method are provided to produce a novel comparator with Schmitt trigger hysteresis character. The circuit includes a current source which controls the magnitude of current flow through this comparator circuit. It has a first logic device which is turned ON by a reference voltage, and a second logic device is turned ON by a comparator input voltage. A first feedback device is turned ON by a negative comparator output. A first parallel resistor is connected in parallel to the first feedback device. A second feedback device is turned ON by a positive comparator output. A second parallel resistor is connected in parallel to the second feedback device. The first and second parallel resistors are used to provide the differential comparator with switching voltage offsets which result in the Schmitt trigger hysteresis character.
摘要:
A bolt assembly includes a bolt member, a washer, and a nut. The bolt member includes a head and a shank. The shank has a connecting section that is connected to an article confronting side of the head, an externally threaded section that extends from the connecting section, a breakable tip that extends from the externally threaded section and that is formed with a plurality of axially extending and angularly displaced teeth, and an annular groove that is formed at a juncture of the externally threaded section and the breakable tip. The washer is sleeved on the shank of the bolt member, and has an article confronting side formed with a plurality of spaced apart and radially extending anti-skid projections, and a nut confronting side opposite to the article confronting side of the washer. The nut engages threadedly the externally threaded section of the shank, and has opposing first and second surfaces respectively disposed remote from and proximate to the nut confronting side of the washer such that the second surface of the nut urges the nut confronting side of the washer toward the head of the bolt member.
摘要:
A method is designed to adjust the distance between the central axes of two ocular lenses of an optical instrument. The method involves the use of a link mechanism to actuate two movable prisms and the two ocular lenses of the optical instrument to move respectively along a base surface such that the optical axes of effective diameters of the two movable prisms are coaxial with the optical axes of the corresponding ocular lenses.
摘要:
A high speed test circuit receives a tester clock from a tester and it conducts a test on a circuit under test. The high speed test circuit generates a high frequency clock according to the tester clock, so it is capable of operating in two frequencies. The high speed test circuit tests the circuit under test according to the high frequency clock, and it performs a low speed operation according to a low frequency clock, which is for example the tester clock.
摘要:
The present invention provides a circuit and a method for the full speed testing of semiconductor memory chips. The invention provides a full-speed data transition scheme for double data rate (DDR) synchronous dynamic random access memory (SDRAM). For high speed or double speed stress testing of DDR SDRAM, the internal clock is double the speed of the external clock. During high speed test, this causes the data to be written or presented to the data path two times. This invention provides a circuit and method for creating a full-speed data transition scheme to overcome this double speed testing problem.
摘要:
An apparatus for generating multi-phase clock signals with a ring oscillator is provided, including a first stage phase-blender module and a second stage phase-blender module. The first stage phase-blender module further includes a plurality of differential OP phase-blender circuits. Each differential blender circuit has two signal inputs, and an output signal whose phase is an interpolation of the two input signals. The second stage phase blender module includes a plurality of inverter phase-blender circuits. Each inverter phase-blender circuit receives two output signals from the first stage phase-blender module as inputs, and outputs a clock signal with the interpolated phase of the two output signals of the first stage phase-blender module.
摘要:
The present invention provides a circuit and a method for the full speed testing of semiconductor memory chips. The invention provides a full-speed data transition scheme for double data rate (DDR) synchronous dynamic random access memory (SDRAM). For high speed or double speed stress testing of DDR SDRAM, the internal clock is double the speed of the external clock. During high speed test, this causes the data to be written or presented to the data path two times. This invention provides a circuit and method for creating a full-speed data transition scheme to overcome this double speed testing problem.
摘要:
A memory reading apparatus transfers digital data from a memory array that is independent of external clocking rate, where the data transmission time is not limited by the external clock period, and the internal timing of controls permits flexible column selection and no conflicts in the timing between external clock signals and internal bit line sensing ready signal. The memory read apparatus has a data read path circuit and a memory read control apparatus. The data read path circuit is in communication with the memory to acquire the selected data read from the memory, synchronize the selected data, and transfer the selected data from the memory. The memory read control apparatus is in communications with the data read path circuit for selecting the data to be read from the memory, for providing self-feedback signals for synchronizing the selected data for transfer from the memory.