公开(公告)号：US06335232B1

公开(公告)日：2002-01-01

申请号：US09165771

申请日：1998-10-02

申请人： Mitsutaka Ohori ,  Shiro Nakanishi

发明人： Mitsutaka Ohori ,  Shiro Nakanishi

IPC分类号： H01L2144

CPC分类号： H01L27/1285 ,  H01L27/1214 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78675 ,  H01L29/78678

摘要： On a transparent substrate where a gate electrode is formed, an amorphous silicon film is deposited by plasma CVD with a gate insulating film interposed therebetween. The silicon film is heated in an nitrogen atmosphere at 430±20° C. for an hour or longer to discharge hydrogen remaining in the film when it is formed. The silicon film is then melted by laser irradiation to crystallize, to thereby form a polycrystalline silicon film serving as an active region. Thus, when amorphous silicon is crystallized to form a polycrystalline silicon film, it is made possible to prevent creation of a rough film surface and penetration of impurity ions in the atmosphere into the polycrystalline silicon.

摘要翻译： 在形成栅电极的透明基板上，通过等离子体CVD沉积非晶硅膜，其间插入有栅极绝缘膜。 将硅膜在氮气气氛中在430±20℃下加热1小时或更长时间，以便在其形成时排出残留在膜中的氢。 然后通过激光照射使硅膜熔融结晶，从而形成用作活性区域的多晶硅膜。 因此，当非晶硅结晶以形成多晶硅膜时，可以防止粗糙膜表面的产生和杂质离子在大气中的渗入到多晶硅中。