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公开(公告)号：US12142958B2
公开(公告)日：2024-11-12
申请号：US17596334
申请日：2021-01-19
Applicant: Nisshinbo Micro Devices Inc.
Inventor： Takayasu Yoshikawa
Abstract: A charge and discharge control circuit controls charge and discharge of a secondary battery connected between a positive electrode power supply terminal and a negative electrode power supply terminal by using a discharge control switching element and a charge control switching element connected between the secondary battery and a load or a charger and includes a charger connection detector circuit that generates a charger connection detection signal, based on a voltage of an external negative electrode terminal connected to the charger; and a pull-up detector circuit that detects a pull-up of the voltage of the external negative electrode terminal, based on the voltage of the external negative electrode terminal, and generates a pull-up detection signal. The charge and discharge control circuit turns off the discharge control switching element, and then, turns on the same after receiving the pull-up detection signal and the charger connection detection signal.
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公开(公告)号：US11954555B2
公开(公告)日：2024-04-09
申请号：US17924250
申请日：2021-05-07
Inventor： Hiroki Sato , Masayuki Sato , Noboru Ishihara , Shinji Murata
CPC classification number: G06K7/10366 , H03B5/24 , H03B2200/004 , H03K21/00
Abstract: A sensor interface circuit includes: an RF switch having a control node; a bias circuit electrically connected to the control node and applying, to the control node, a voltage at a first level or a second level corresponding to a linear region of a reflection characteristic; a first variable oscillation circuit electrically connectable to a first sensor; a second variable oscillation circuit electrically connectable to a second sensor; and a difference circuit electrically connected between the first variable oscillation circuit and the bias circuit, and between the second variable oscillation circuit and the bias circuit.
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公开(公告)号：US20220221889A1
公开(公告)日：2022-07-14
申请号：US17595941
申请日：2020-03-18
Applicant: Nisshinbo Micro Devices Inc.
Inventor： Hiroki OKUDA
Abstract: In a power supply device, a voltage controller includes: a reference voltage circuit that generates a reference voltage based on an input voltage; a voltage control circuit that generates ate output voltage of the voltage controller based on the input voltage by controlling an output current of the voltage controller so that the output voltage of the voltage controller corresponds to the reference voltage; and a first current detector circuit that detects the output current of the voltage controller, and generates a first current detection signal corresponding to the output current thereof. A current controller includes: a second current detector circuit that detects an output current of the current controller, and generates a second current detection signal corresponding to the output current thereof; and a current control circuit controls the output current of the current controller so that the second current detection signal corresponds to the first current detection signal.
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公开(公告)号：US20220197320A1
公开(公告)日：2022-06-23
申请号：US17602053
申请日：2019-06-12
Applicant: Nisshinbo Micro Devices Inc.
Inventor： Kenji MII
Abstract: A constant voltage circuit amplifies an error between a reference voltage and an output voltage by an operational amplifier, and controls a load current based on the amplified voltage so that the output voltage becomes a constant voltage. The constant voltage circuit includes voltage detector means that detects only AC components of the output voltage limited to a predetermined band and outputs a detected voltage; voltage amplifier means that amplifies AC components of the detected voltage and outputs an amplified voltage; judgment means that outputs a judgment signal indicating whether or not the amplified voltage equal to or larger than a predetermined threshold; and controller means configured to increase a current value of the constant current source included in the operational amplifier, based on the judgment signal, thereby temporarily increasing a current consumption of the operational amplifier.
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公开(公告)号：US20250145450A1
公开(公告)日：2025-05-08
申请号：US18837822
申请日：2023-02-09
Applicant: Nisshinbo Micro Devices Inc.
Inventor： Yoshimitsu Kuromaru , Yoshiyuki Kouda , Kiyoshi Maeda , Hiroshi Takahashi , Keita Yamamoto , Jun Kinoshita
IPC: B81B3/00
Abstract: A MEMS element comprising: a substrate comprising a back chamber; a vibrating membrane joined onto the substrate and comprising a movable electrode; and a backplate comprising a fixed electrode disposed so as to face the movable electrode. A wall connected to the backplate, slits, and a plurality of vibrating portions are formed in the vibrating membrane, the plurality of vibrating portions are present in either one of a region surrounded by a portion in which the wall and the vibrating membrane are joined and a region between the portion in which the wall and the vibrating membrane are joined and the peripheral portion of the vibrating membrane, and at least one vibrating portion is present in the region between the portion in which the wall and the vibrating membrane are joined and the peripheral portion of the vibrating membrane.
A MEMS element comprising: a substrate comprising a back chamber; a vibrating membrane joined onto the substrate and comprising a movable electrode; and a backplate comprising a fixed electrode disposed so as to face the movable electrode. A wall connected to the backplate slits, and a plurality of vibrating portions are formed in the vibrating membrane, the plurality of vibrating portions are present in either one of a region surrounded by a portion in which the wall and the vibrating membrane are joined and a region between the portion in which the wall and the vibrating membrane are joined and the peripheral portion of the vibrating membrane, and at least one vibrating portion is present in the region between the portion in which the wall and the vibrating membrane are joined and the peripheral portion of the vibrating membrane.-
Patent Agency Ranking
公开(公告)号：US20250145449A1
公开(公告)日：2025-05-08
申请号：US18837813
申请日：2022-02-22
Applicant: Nisshinbo Micro Devices Inc.
Inventor： Takao Fukutome
IPC: B81B3/00
Abstract: A MEMS element in which a backplate including a fixed electrode and a vibrating membrane including a movable electrode are disposed on a substrate including a back chamber, so as to face each other via a spacer, the vibrating membrane includes a pillar connected to the backplate, pillar side slits, and peripheral portion side slits, and a plurality of vibrating portion is formed in the vibrating membrane. The central portion of the vibrating membrane is connected to the backplate by the pillar, so that the amplitude of the central portion can be suppressed. In each of a plurality of vibrating portions, the pillar side slits are disposed on a portion side in which the pillar and the vibrating membrane are joined and the peripheral portion side slits are disposed at the peripheral portion, thereby decreasing the difference in the amplitude amount between the central portion and the peripheral portion. A MEMS element in which a backplate including a fixed electrode and a vibrating membrane including a movable electrode are disposed on a substrate including a back chamber, so as to face each other via a spacer, the vibrating membrane includes a pillar connected to the backplate, pillar side slits, and peripheral portion side slits, and a plurality of vibrating portion is formed in the vibrating membrane. The central portion of the vibrating membrane is connected to the backplate by the pillar, so that the amplitude of the central portion can be suppressed. In each of a plurality of vibrating portions, the pillar side slits are disposed on a portion side in which the pillar and the vibrating membrane are joined and the peripheral portion side slits are disposed at the peripheral portion, thereby decreasing the difference in the amplitude amount between the central portion and the peripheral portion.
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公开(公告)号：US20250085731A1
公开(公告)日：2025-03-13
申请号：US18960926
申请日：2024-11-26
Applicant: NISSHINBO MICRO DEVICES INC.
Inventor： Kenji Mii , Kohji Yoshii
Abstract: A constant voltage generator circuit includes a first amplifier circuit that drives a transistor controlling an output current based on a reference voltage; a second amplifier circuit that drives the transistor based on the reference voltage from the power source; a protection circuit that limit an output current flowing through the load from the transistor; and a control circuit that controls operation of the second amplifier circuit. The control circuit controls the second amplifier circuit to operate or not to operate based on a relationship between the output current and predetermined first or second threshold. The second amplifier circuit further includes a first operation voltage potential fixing circuit that fixes an operation voltage potential of an internal node of the second amplifier circuit during non-operation thereof.
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公开(公告)号：US20240357938A1
公开(公告)日：2024-10-24
申请号：US18682541
申请日：2022-09-08
Applicant: Nisshinbo Holdings Inc. , Nisshinbo Micro Devices Inc.
Inventor： Naoki MASUMOTO , Hiroyuki KUCHIJI , Toshikatsu KIKUCHI
CPC classification number: H10N30/101 , H10N30/2048 , H10N30/308 , H10N30/704 , H10N30/8554 , H10N30/87 , H04R17/10
Abstract: A piezoelectric device comprising a substrate having a cavity, a piezoelectric film covering the cavity and being supported by the substrate, and electrodes disposed so as to sandwich the piezoelectric film. The piezoelectric film has a convex-shaped or concave-shaped vibrating region disposed on the cavity. The vibrating region is configured by a single-layer piezoelectric film including a first region composed of a first piezoelectric material and a second region composed of a second piezoelectric material having a piezoelectric constant larger than that of the first piezoelectric material. A first electrode and a second electrode are disposed so as to sandwich the second region of the piezoelectric film, a first input signal is converted to a first output signal based on displacement at the second region of the piezoelectric film between these electrodes, and a piezoelectric device comprising a convex-shaped vibrating region with high power and high sensitivity is provided.
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公开(公告)号：US12034418B2
公开(公告)日：2024-07-09
申请号：US17596273
申请日：2021-07-26
Applicant: Nisshinbo Micro Devices Inc.
Inventor： Tomoaki Matsuda
CPC classification number: H03F3/45269 , G05F1/46 , H02M3/155
Abstract: A differential amplifier circuit of the present invention includes a differential input circuit including first and second transistors, and amplifies a difference voltage between a first input voltage applied to a control terminal of the first transistor and a second input voltage applied to a control terminal of the second transistor. The differential input circuit a P-channel depletion type transistor having a gate connected to the control terminal of the first transistor and a source connected to the control terminal of the second transistor, and the P-channel depletion type transistor operates as a bias current source of the differential amplifier circuit.
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公开(公告)号：US20230282694A1
公开(公告)日：2023-09-07
申请号：US17766575
申请日：2020-11-06
Applicant: NISSHINBO MICRO DEVICES INC. , University of Yamanashi
Inventor： Makoto HASHIMOTO , Koji YANO , Naohiro SHIMIZU
IPC: H01L29/06 , H01L29/732 , H01L29/739 , H01L29/808 , H01L29/74
CPC classification number: H01L29/0634 , H01L29/732 , H01L29/7395 , H01L29/74 , H01L29/8083
Abstract: A semiconductor device has a super junction structure and includes a first semiconductor layer of the second conductive type disposed on the first column region and the second column region, a second semiconductor layer of the first conductive type disposed on the first semiconductor layer, a first semiconductor region of the first conductive type that is electrically connected to the first electrode and is disposed in a surface layer portion of the second semiconductor layer to be separated from the first semiconductor layer, and a second semiconductor region of the second conductive type that is electrically connected to the second electrode and that is disposed at least in the surface layer portion of the second semiconductor layer to be separated from the first semiconductor region and is electrically connected to the first semiconductor layer.
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