LIGHT-EMITTING DEVICE
    1.
    发明公开

    公开(公告)号:US20240147764A1

    公开(公告)日:2024-05-02

    申请号:US17769342

    申请日:2020-10-10

    IPC分类号: H10K59/122 H10K59/80

    CPC分类号: H10K59/122 H10K59/877

    摘要: The present disclosure provides a light-emitting device. The light-emitting device includes a substrate layer and pixel isolation structures disposed on a first surface of the substrate layer, a plurality of sub-pixel regions isolated from each other are formed between the pixel isolation structures, and the light-emitting device further include a plurality of light-emitting units disposed one-to-one in each of the sub-pixel regions for emitting different wavelengths of light, the light-emitting units being electroluminescent devices, and an initial external quantum efficiency of each of the light-emitting units being different; a plurality of light extraction structures disposed one-to-one in at least part of the plurality of sub-pixel regions for increasing an external quantum efficiency of the corresponding light-emitting unit, reducing deviations of the actual external quantum efficiency of each of the light-emitting units.

    LIGHT-EMITTING DEVICE, DISPLAY APPARATUS, AND LIGHTING APPARATUS HAVING THE SAME

    公开(公告)号:US20220416211A1

    公开(公告)日:2022-12-29

    申请号:US17777649

    申请日:2020-11-20

    IPC分类号: H01L51/52 H01L51/50 H01L27/32

    摘要: Provided in the present disclosure are a light-emitting device, a display apparatus having the same, and a lighting apparatus. The light-emitting device includes a light-emitting unit disposed in a sub-region. The light-emitting unit includes a light-emitting functional layer, a light extraction functional layer and a part of a light transmissive substrate, which are disposed in a stacked manner. The light extraction functional layer is located on a light-exiting side of the light-emitting functional layer. A straight line segment that passes through geometric center of a light-exiting surface of each light-emitting unit and whose two ends are respectively connected with edge line of the light-exiting surface is defined as a first straight line segment, and the shortest length of the first straight line segment is defined as W. In a direction perpendicular to the light transmissive substrate, a thickness of the light-emitting unit without reflective electrode is T.

    CORE-SHELL QUANTUM DOT PREPARING METHOD, CORE-SHELL QUANTUM DOT AND QUANTUM DOT ELECTROLUMINESCENT DEVICE COMPRISING THE SAME

    公开(公告)号:US20220293877A1

    公开(公告)日:2022-09-15

    申请号:US17285493

    申请日:2019-08-01

    摘要: The disclosure provides a core-shell quantum dots preparing method, core-shell quantum dots and a quantum dot electroluminescent device including the core-shell quantum dots. The method includes preparing a solution containing alloy quantum dot cores, purifying the alloy quantum dot cores; heating a mixture of a cation precursor of the shell, a carboxylic acid, the alloy quantum dot cores and a solvent for a certain period of time, after it, the carboxylic acid presents in the mixture being free carboxylic acid; adding an fatty amine and an anion precursor of the shell into the mixture to coat the alloy quantum dot cores to obtain the core-shell quantum dot. The surface of the core-shell quantum dots includes a fatty amine ligand, which amounts for at least 80% of all the ligands on the surface of the core-shell quantum dots, and the core-shell quantum dots are high in luminescence efficiency and stability.

    Manufacturing method for light emitting device, light emitting device, and hybrid light emitting device

    公开(公告)号:US20220077433A1

    公开(公告)日:2022-03-10

    申请号:US17012086

    申请日:2020-09-04

    IPC分类号: H01L51/56 H01L51/00 H01L51/50

    摘要: A surface modification mask plate, a surface modifying method for the mask plate, and a manufacturing method for an electroluminescence device, the surface modification mask plate is provided with multiple hollow portions, the surface modification mask plate has a modified surface, the modified surface includes a first modified surface and a second modified surface, the first modified surface is set around the hollow portions, the modified surface except the first modified surface is the second modified surface, and the first modified surface and the second modified surface are different and are respectively selected from one of a hydrophilic surface and a hydrophobic surface.

    LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF

    公开(公告)号:US20210265538A1

    公开(公告)日:2021-08-26

    申请号:US17261035

    申请日:2019-04-29

    摘要: The disclosure provides a light emitting device and a manufacturing method thereof. The light emitting device includes a substrate, an LED chip, a quantum dot composite layer and a first protective layer; the LED chip is disposed on a surface of the substrate; the quantum dot composite layer is arranged on a surface of the LED chip away from the substrate; the first protective layer is arranged on a surface of the quantum dot composite layer away from the LED chip; wherein the quantum dot composite layer includes a water-soluble polymer matrix and quantum dots dispersed in the water-soluble polymer matrix; the material of the first protective layer is one of a first inorganic oxide and a first water-blocking polymer; and the material of the water-soluble polymer matrix is an oxygen-blocking polymer.

    LIGHT-EMITTING DEVICE AND METHOD FOR USING QUANTUM DOT LEDS

    公开(公告)号:US20240292644A1

    公开(公告)日:2024-08-29

    申请号:US18576760

    申请日:2022-07-12

    IPC分类号: H10K50/115 H10K101/60

    CPC分类号: H10K50/115 H10K2101/60

    摘要: A light-emitting device and method for using quantum dot LEDs are provided in the present application. The light-emitting device includes at least one quantum dot LED, wherein the quantum dot LED includes a first electrode, an electron transport layer, a quantum dot layer, a hole transport layer, and a second electrode which are sequentially stacked; a fluorescence quantum yield of quantum dots in the quantum dot layer is equal to or greater than 50%; a ratio of an average photon voltage to an operating voltage of the quantum dot LED is equal to or greater than 1; electroluminescence of the quantum dot LED includes thermoelectrically-assisted up-conversion luminescence. The quantum dot LED can achieve higher external power conversion efficiency in the light-emitting device.