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    MEMORY ELEMENT AND MEMORY DEVICE
    1.
    发明申请
    MEMORY ELEMENT AND MEMORY DEVICE 有权
    存储元件和存储器件

    公开(公告)号：US20110155987A1

    公开(公告)日：2011-06-30

    申请号：US13060342

    申请日：2009-08-28

    申请人： Tetsuya Mizuguchi ,  Shuichiro Yasuda ,  Satoshi Sasaki ,  Naomi Yamada

    发明人： Tetsuya Mizuguchi ,  Shuichiro Yasuda ,  Satoshi Sasaki ,  Naomi Yamada

    IPC分类号： H01L45/00

    CPC分类号： H01L45/141 ,  H01L27/2436 ,  H01L27/2472 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/145 ,  H01L45/146 ,  H01L45/1625

    摘要： A memory element capable of simultaneously satisfying the number of repeating operation times and a low-voltage operation characteristic which are in a tradeoff relation is provided. The memory element has a high-resistivity layer and an ion source layer between a bottom electrode and a top electrode. The high-resistivity layer is made of an oxide containing Te. Any of elements other than Te such as Al, Zr, Ta, Hf, Si, Ge, Ni, Co, Cu, and Au may be added. In the case of adding Al to Te and also adding Cu and Zr, the composition ratio of the high-resistivity layer is preferably adjusted in the ranges of 30≦Te≦100 atomic %, 0≦Al≦70 atomic %, and 0≦Cu+Zr≦36 atomic % except for oxygen. The ion source layer is made of at least one kind of metal elements and at least one kind of chalcogen elements of Te, S, and Se.

    摘要翻译： 提供能够同时满足重复操作次数的存储元件和具有权衡关系的低电压操作特性。 存储元件在底电极和顶电极之间具有高电阻率层和离子源层。 高电阻率层由含Te的氧化物制成。 可以添加除Te以外的其他元素，例如Al，Zr，Ta，Hf，Si，Ge，Ni，Co，Cu和Au。 在将Al添加到Te中并添加Cu和Zr的情况下，优选将高电阻率层的组成比调整为30＆lt; 1lE; Te＆nlE; 100原子％，0＆amp; nlE; Al原子％，70原子％，0＆amp; Cu + Zr＆nlE; 36原子％除了氧。 离子源层由至少一种金属元素和至少一种Te，S和Se的硫属元素构成。

    Method of unlocking password lock of storage device, information processor, computer-readable recording medium storing unlocking program, and control device
    2.
    发明授权
    Method of unlocking password lock of storage device, information processor, computer-readable recording medium storing unlocking program, and control device 有权
    解锁存储装置的密码锁的方法，信息处理器，存储解锁程序的计算机可读记录介质和控制装置

    公开(公告)号：US07103909B1

    公开(公告)日：2006-09-05

    申请号：US09257052

    申请日：1999-02-25

    申请人： Hisaki Kondo ,  Shunichi Okano ,  Naomi Yamada

    发明人： Hisaki Kondo ,  Shunichi Okano ,  Naomi Yamada

    IPC分类号： G06F9/00 ,  G06F17/30 ,  G06F1/26 ,  G06F15/16 ,  G06F1/28

    CPC分类号： H04L63/083 ,  G06F3/0601 ,  G06F21/31 ,  G06F21/80 ,  G06F2003/0692

    摘要： An information processor equipped with a password storage for storing a password, which is inputted from outside for unlocking a password-locked condition of a storage device when booting the information processor. During a resume process, a controller unlocks the password-locked condition of the storage device using the password previously stored in the password storage. With this arrangement, when the information processor resumes its normal operating condition from a power saving mode, the operator does not need to input a password even if the information processor is installed in an unattended environment or a far remote local area.

    摘要翻译： 一种配备有用于存储密码的密码存储器的信息处理器，其在从引导信息处理器时从外部输入用于解锁存储设备的密码锁定状态。 在恢复过程中，控制器使用先前存储在密码存储器中的密码来解锁存储设备的密码锁定状态。 利用这种安排，当信息处理器从功率节省模式恢复其正常操作状态时，即使信息处理器安装在无人值守的环境或远的远程局部区域中，操作者也不需要输入密码。

    Memory element and memory device
    5.
    发明授权
    Memory element and memory device 有权
    存储器元件和存储器件

    公开(公告)号：US08547735B2

    公开(公告)日：2013-10-01

    申请号：US13060342

    申请日：2009-08-28

    申请人： Tetsuya Mizuguchi ,  Shuichiro Yasuda ,  Satoshi Sasaki ,  Naomi Yamada

    发明人： Tetsuya Mizuguchi ,  Shuichiro Yasuda ,  Satoshi Sasaki ,  Naomi Yamada

    IPC分类号： G11C11/00

    CPC分类号： H01L45/141 ,  H01L27/2436 ,  H01L27/2472 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/145 ,  H01L45/146 ,  H01L45/1625

    摘要： A memory element capable of simultaneously satisfying the number of repeating operation times and a low-voltage operation characteristic which are in a tradeoff relation is provided. The memory element has a high-resistivity layer and an ion source layer between a bottom electrode and a top electrode. The high-resistivity layer is made of an oxide containing Te. Any of elements other than Te such as Al, Zr, Ta, Hf, Si, Ge, Ni, Co, Cu, and Au may be added. In the case of adding Al to Te and also adding Cu and Zr, the composition ratio of the high-resistivity layer is preferably adjusted in the ranges of 30≦Te≦100 atomic %, 0≦Al≦70 atomic %, and 0≦Cu+Zr≦36 atomic % except for oxygen. The ion source layer is made of at least one kind of metal elements and at least one kind of chalcogen elements of Te, S, and Se.

    摘要翻译： 提供能够同时满足重复操作次数的存储元件和具有权衡关系的低电压操作特性。 存储元件在底电极和顶电极之间具有高电阻率层和离子源层。 高电阻率层由含Te的氧化物制成。 可以添加除Te以外的其他元素，例如Al，Zr，Ta，Hf，Si，Ge，Ni，Co，Cu和Au。 在将Al添加到Te中并添加Cu和Zr的情况下，优选将高电阻率层的组成比调整为30〜100原子％，70％（原子％），0〜 Cu + Zr @ 36原子％除了氧。 离子源层由至少一种金属元素和至少一种Te，S和Se的硫属元素构成。