公开(公告)号：US06699418B2

公开(公告)日：2004-03-02

申请号：US10073988

申请日：2002-02-14

申请人： Kazuhisa Okada ,  Nariaki Fujii

发明人： Kazuhisa Okada ,  Nariaki Fujii

IPC分类号： B29C5512

CPC分类号： B32B27/08 ,  B29L2031/712 ,  B32B27/306 ,  B32B27/32 ,  B32B38/0036 ,  B32B38/1825 ,  B32B2329/04 ,  C08J5/18 ,  C08J2329/04 ,  Y10S428/91 ,  Y10T428/31928 ,  Y10T428/31935

摘要： A method for producing a biaxially stretched film is provided, in which the method comprises, stretching a film made mainly of an ethylene-vinyl alcohol copolymer having an ethylene content of 15 to 70 mol % and a saponification degree of 80 mol % or more under heating; cooling the film; and subjecting the cooled film to a heat treatment; wherein a heating temperature during the stretching is 60 to 160° C., a cooling temperature is a temperature 30 to 100° C. lower than the heating temperature during the stretching, and a temperature for the heat treatment is 150 to 190° C. The thus obtained biaxially stretched film of the present invention has a small bowing coefficient.

摘要翻译： 提供了一种双轴拉伸膜的制造方法，其中，所述方法包括：将主要由乙烯含量为15〜70摩尔％，皂化度为80摩尔％以上的乙烯 - 乙烯醇共聚物制成的膜拉伸， 加热; 冷却膜; 并对冷却的膜进行热处理; 拉伸时的加热温度为60〜160℃，冷却温度比拉伸时的加热温度低30〜100℃，热处理温度为150〜190℃。 由此得到的本发明的双轴拉伸膜的弯曲系数小。

公开(公告)号：US5547899A

公开(公告)日：1996-08-20

申请号：US401980

申请日：1995-03-10

申请人： Nariaki Fujii ,  Tatsuya Kimura

发明人： Nariaki Fujii ,  Tatsuya Kimura

IPC分类号： H01S5/00 ,  H01S5/02 ,  H01S5/042 ,  H01S5/227 ,  H01S5/30 ,  H01L21/22

CPC分类号： H01S5/305 ,  H01S5/0208 ,  H01S5/0422 ,  H01S5/2275 ,  H01S5/3054 ,  H01S5/3068 ,  Y10S438/916

摘要： In a method of making a semiconductor device, a p-type compound semiconductor layer containing zinc as a dopant impurity and including at least one transition metal element selected from the group consisting of Fe, V, Cr, Mn, Co, and Ni is grown on a second semiconductor layer, the at least one transition metal element inhibiting zinc from diffusing into the second semiconductor layer. A method of making a semiconductor laser includes growing the p-type compound semiconductor layer containing zinc as a cladding layer and the second layer is an undoped compound semiconductor active layer.

摘要翻译： 在制造半导体器件的方法中，生长包含选自Fe，V，Cr，Mn，Co和Ni中的至少一种过渡金属元素作为掺杂剂杂质的p型化合物半导体层， 在第二半导体层上，所述至少一种过渡金属元素抑制锌扩散到第二半导体层。 制造半导体激光器的方法包括生长含有锌作为包层的p型化合物半导体层，第二层是未掺杂的化合物半导体活性层。

公开(公告)号：US5582647A

公开(公告)日：1996-12-10

申请号：US358465

申请日：1994-12-19

申请人： Manabu Kato ,  Takashi Motoda ,  Tatsuya Kimura ,  Kaoru Kadoiwa ,  Zempei Kawazu ,  Nariaki Fujii

发明人： Manabu Kato ,  Takashi Motoda ,  Tatsuya Kimura ,  Kaoru Kadoiwa ,  Zempei Kawazu ,  Nariaki Fujii

IPC分类号： C23C16/44 ,  C23C16/448 ,  C23C16/52 ,  H01L21/205 ,  A01K15/04

CPC分类号： C23C16/4482 ,  C23C16/52

摘要： A material supplying apparatus includes a container for storing a solution; an inlet pipe for introducing a carrier gas and an outlet pipe; electrodes disposed in the container over the depth direction of the container and forming a capacitor; and apparatus for calculating a residual amount of the solution in the container from the capacitance of the capacitor formed by the electrodes. The solution is used as the dielectric of the capacitor formed in the container and the capacitance varies according to the quantity of solution so that the residual amount of the solution and the time to replenish the solution are calculated in a simple structure having no moving parts.

摘要翻译： 材料供给装置包括用于储存溶液的容器; 用于引入载气和出口管的入口管; 在容器的深度方向上设置在容器中并形成电容器的电极; 以及根据由电极形成的电容器的电容计算容器中的溶液残留量的装置。 该溶液用作形成在容器中的电容器的电介质，并且电容根据溶液量而变化，使得溶液的剩余量和补充溶液的时间以不具有移动部件的简单结构计算。