公开(公告)号：US08097345B2

公开(公告)日：2012-01-17

申请号：US12065395

申请日：2006-08-30

申请人： Tomoyoshi Hakamata ,  Akira Nomoto ,  Osamu Nakamura ,  Yoshihisa Inoue ,  Kou Tsurugi ,  Nobuhiro Tanabe ,  Yoshihiro Yamamoto

发明人： Tomoyoshi Hakamata ,  Akira Nomoto ,  Osamu Nakamura ,  Yoshihisa Inoue ,  Kou Tsurugi ,  Nobuhiro Tanabe ,  Yoshihiro Yamamoto

IPC分类号： B32B27/00 ,  B05D3/02

CPC分类号： C08F261/04 ,  B32B27/08 ,  C08L29/04 ,  C08L33/02 ,  C08L51/003 ,  C09D129/04 ,  C09D151/003 ,  Y10T428/31855 ,  C08L2666/04 ,  C08L2666/02

摘要： Disclosed is an excellent gas barrier laminate whose gas-barrier property has little dependency on temperature and which hardly causes fracture even when the laminate is stretched. A gas barrier film comprising a polymer (A) of an unsaturated carboxylic acid compound monovalent metal salt (a), wherein the polymer (A) contains a modified vinyl alcohol polymer (B); a gas barrier laminate comprising a base layer and the gas barrier film formed on at least one surface of the base layer; and a method for production of a gas barrier laminate comprising the steps of: coating a solution of an unsaturated carboxylic acid compound monovalent metal salt (a) having a polymerization degree less than 20 on at least one surface of a base layer, wherein the solution contains a modified vinyl alcohol polymer (B); performing the polymerization to form a layer of the polymer (A) of the unsaturated carboxylic acid compound monovalent metal salt (a) containing the modified vinyl alcohol polymer (B).

摘要翻译： 公开了一种优异的阻气性层压体，其气体阻隔性对温度几乎没有依赖性，即使在层叠体被拉伸时也难以引起断裂。 一种阻气膜，其包含不饱和羧酸化合物一价金属盐（a）的聚合物（A），其中所述聚合物（A）含有改性乙烯醇聚合物（B）; 阻气层压板，其包含形成在所述基层的至少一个表面上的基底层和所述阻气膜; 和阻气性层压体的制造方法，其特征在于，在基层的至少一个表面上涂布聚合度小于20的不饱和羧酸化合物一价金属盐（a）的溶液， 含有改性乙烯醇聚合物（B）; 进行聚合以形成含有改性乙烯醇聚合物（B）的不饱和羧酸化合物一价金属盐（a）的聚合物（A）的层。

公开(公告)号：US20090269592A1

公开(公告)日：2009-10-29

申请号：US12065395

申请日：2006-08-30

申请人： Tomoyoshi Hakamata ,  Akira Nomoto ,  Osamu Nakamura ,  Yoshihisa Inoue ,  Kou Tsurugi ,  Nobuhiro Tanabe ,  Yoshihiro Yamamoto

发明人： Tomoyoshi Hakamata ,  Akira Nomoto ,  Osamu Nakamura ,  Yoshihisa Inoue ,  Kou Tsurugi ,  Nobuhiro Tanabe ,  Yoshihiro Yamamoto

IPC分类号： B32B27/28 ,  B32B27/30 ,  B05D3/02 ,  C08F16/06

CPC分类号： C08F261/04 ,  B32B27/08 ,  C08L29/04 ,  C08L33/02 ,  C08L51/003 ,  C09D129/04 ,  C09D151/003 ,  Y10T428/31855 ,  C08L2666/04 ,  C08L2666/02

摘要： Disclosed is an excellent gas barrier laminate whose gas-barrier property has little dependency on temperature and which hardly causes fracture even when the laminate is stretched. A gas barrier film comprising a polymer (A) of an unsaturated carboxylic acid compound monovalent metal salt (a), wherein the polymer (A) contains a modified vinyl alcohol polymer (B); a gas barrier laminate comprising a base layer and the gas barrier film formed on at least one surface of the base layer; and a method for production of a gas barrier laminate comprising the steps of: coating a solution of an unsaturated carboxylic acid compound monovalent metal salt (a) having a polymerization degree less than 20 on at least one surface of a base layer, wherein the solution contains a modified vinyl alcohol polymer (B); performing the polymerizaton to form a layer of the polymer (A) of the unsaturated carboxylic acid compound monovalent metal salt (a) containing the modified vinyl alcohol polymer (B).

摘要翻译： 公开了一种优异的阻气性层压体，其气体阻隔性对温度几乎没有依赖性，即使在层叠体被拉伸时也难以引起断裂。 一种阻气膜，其包含不饱和羧酸化合物一价金属盐（a）的聚合物（A），其中所述聚合物（A）含有改性乙烯醇聚合物（B）; 阻气层压板，其包含形成在所述基层的至少一个表面上的基底层和所述阻气膜; 和阻气性层压体的制造方法，其特征在于，在基层的至少一个表面上涂布聚合度小于20的不饱和羧酸化合物一价金属盐（a）的溶液， 含有改性乙烯醇聚合物（B）; 进行聚合以形成含有改性乙烯醇聚合物（B）的不饱和羧酸化合物一价金属盐（a）的聚合物（A）的层。

公开(公告)号：US6004839A

公开(公告)日：1999-12-21

申请号：US804112

申请日：1997-02-20

申请人： Yoshihiro Hayashi ,  Nobuhiro Tanabe ,  Tsuneo Takeuchi ,  Shinobu Saito

发明人： Yoshihiro Hayashi ,  Nobuhiro Tanabe ,  Tsuneo Takeuchi ,  Shinobu Saito

IPC分类号： H01L21/768 ,  H01L21/8242 ,  H01L21/8246 ,  H01L21/8238

CPC分类号： H01L27/11502 ,  H01L21/768 ,  H01L27/10844 ,  H01L27/10852 ,  H01L27/11507

摘要： In a method of manufacturing a semiconductor device, a CMOS section composed of an N-channel MOS transistor and a P-channel MOS transistor and a memory section composed of at least a transfer gate MOS transistor is formed on a substrate. A plurality of conductive plugs is formed to penetrate a laminate insulating film to the MOS transistors. The laminate insulating film is composed of a first insulating film and a second insulating film. A capacitor section is formed on the laminate insulating film and the capacitor section is composed of an upper electrode, a dielectric film and a lower electrode. A third insulating film is formed on the laminate insulating film and the capacitor section. A wiring pattern is formed on the third insulating film to partially penetrate the second insulating film connect to the plurality of conductive plugs. A wiring pattern may be disposed in the laminate insulating film to connect at least two of the plurality of conductive plugs.

摘要翻译： 在制造半导体器件的方法中，在衬底上形成由N沟道MOS晶体管和P沟道MOS晶体管组成的CMOS部分和至少由传输门MOS晶体管组成的存储部分。 形成多个导电插塞以穿透层压绝缘膜到MOS晶体管。 层叠绝缘膜由第一绝缘膜和第二绝缘膜构成。 在层叠绝缘膜上形成电容器部，电容部由上部电极，电介质膜和下部电极构成。 在层压绝缘膜和电容器部分上形成第三绝缘膜。 在第三绝缘膜上形成布线图案，以部分地穿透连接到多个导电插塞的第二绝缘膜。 布线图案可以布置在层压绝缘膜中以连接多个导电插塞中的至少两个。

公开(公告)号：US06323510B1

公开(公告)日：2001-11-27

申请号：US09023819

申请日：1998-02-13

申请人： Nobuhiro Tanabe ,  Kazushi Amanuma

发明人： Nobuhiro Tanabe ,  Kazushi Amanuma

IPC分类号： H01L2976

CPC分类号： H01L27/11502 ,  H01L27/11507

摘要： A semiconductor memory device is provided, which prevents the characteristic of storage capacitors from degrading without chip-area increase of memory cells. Each of storage capacitors has a dielectric sandwiched by lower and upper electrodes. The lower electrodes are formed by a patterned, common electrically-conductive layer. The dielectrics are formed by a patterned, common ferroelectric layer formed on the common electrically-conductive layer which is entirely overlapped with the common electrically-conductive layer. The upper electrodes are regularly arranged on the common ferroelectric layer and are located outside the rows and columns of a matrix array where the windows of the common electrically-conductive layer and common ferroelectric layer are aligned. Wiring lines are formed over the upper electrodes through an interlayer insulating layer covering the storage capacitors, thereby electrically connecting the upper electrodes and select transistors.

摘要翻译： 提供一种半导体存储器件，其防止存储电容器的特性降低，而不会存储单元的芯片面积增加。 每个存储电容器具有由下电极和上电极夹持的电介质。 下电极由图案化的公共导电层形成。 电介质由形成在公共导电层上的图案化的公共铁电层形成，该公共导电层与公共导电层完全重叠。 上电极规则地布置在公共铁电层上，并且位于公共导电层和公共铁电层的窗口对齐的矩阵阵列的行和列的外侧。 通过覆盖存储电容器的层间绝缘层在上电极上形成配线，从而电连接上电极和选择晶体管。

公开(公告)号：US5391901A

公开(公告)日：1995-02-21

申请号：US139718

申请日：1993-10-22

申请人： Nobuhiro Tanabe

发明人： Nobuhiro Tanabe

IPC分类号： H01L27/10 ,  H01L21/8242 ,  H01L27/108 ,  H01L23/48

CPC分类号： H01L27/10805

摘要： A plurality of word lines extend linearly and parallel to each other. A reference word line is positioned to divide the word lines into two groups of word lines. A plurality of bit lines are folded on the reference word line symmetrically with respect to the reference word line and spaced at intervals from each other. Each of memory elements comprises a capacitive element and a switching transistor having a source connected to the capacitive element, a drain connected to one of the bit lines, and a gate connected to one of the word lines. The memory elements are disposed in a matrix such that they are spaced across and along the word lines and paired memory elements whose switching transistors have drains connected to the same bit line are positioned symmetrically with respect to the reference word line.

摘要翻译： 多个字线线性地并且彼此平行地延伸。 一个参考字线被定位成将字线分成两组字线。 多个位线在参考字线上相对于参考字线对称地折叠并且彼此间隔开。 每个存储元件包括电容元件和具有连接到电容元件的源极的开关晶体管，连接到位线之一的漏极和连接到字线之一的栅极。 存储器元件以矩阵的形式设置，使得它们沿着字线间隔开并且沿着字线间隔开并且成对的存储器元件，其开关晶体管具有连接到相同位线的漏极相对于参考字线对称地定位。

公开(公告)号：US6002608A

公开(公告)日：1999-12-14

申请号：US94729

申请日：1998-06-15

申请人： Nobuhiro Tanabe

发明人： Nobuhiro Tanabe

IPC分类号： G11C14/00 ,  G11C11/22 ,  G11C11/24

CPC分类号： G11C11/22

摘要： In a ferroelectric memory, a malfunction in which data are reversed at the time of writing after reading out of data is prevented. Using a transistor to short-circuit two common lines which are connected to a memory element, the two common lines are short-circuited at the preparing stage for writing new data, and thereby such a malfunction which occurs reversal of data owing to an electric potential difference between common lines is prevented.

摘要翻译： 在铁电存储器中，防止在读出数据之后写入时数据反转的故障。 使用晶体管来短路连接到存储元件的两条公共线，在用于写入新数据的准备阶段，两条公共线短路，从而由于电位而发生数据反转的故障 防止公共线之间的差异。