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公开(公告)号：US5679476A
公开(公告)日：1997-10-21
申请号：US671204
申请日：1996-06-27
申请人： Noriyuki Uemura , Mitsuo Kono
发明人： Noriyuki Uemura , Mitsuo Kono
CPC分类号： C30B29/06 , C30B25/02 , C30B33/00 , Y10S117/904
摘要： An epitaxial wafer capable of removing impurities and oxide layers thereon having a high dielectric strength is disclosed. A substrate wafer 1 in which laser-scattering centers have a density of higher than 5.times.10.sup.6 /cm.sup.3 is provided. An epitaxial layer 3 is formed by epitaxial growth on a completely clean surface of the substrate. The surface of the epitaxial layer consists of a non-defect layer which is provided for device active regions. Moreover, a high density of laser-scattering centers are distributed near the interface of the epitaxial layer and the substrate wafer and the interior of the substrate, thus providing for a wafer capable of removing impurities.
摘要翻译： 公开了能够去除其上具有高介电强度的杂质和氧化物层的外延晶片。 提供激光散射中心的密度高于5×10 6 / cm 3的衬底晶片1。 通过在衬底的完全干净的表面上外延生长形成外延层3。 外延层的表面由为器件活性区域提供的非缺陷层组成。 此外，激光散射中心的高密度分布在外延层和衬底晶片的界面附近以及衬底的内部附近，从而提供能够去除杂质的晶片。
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公开(公告)号：US5744380A
公开(公告)日：1998-04-28
申请号：US806310
申请日：1997-02-26
CPC分类号： C30B13/00 , C30B15/00 , C30B29/06 , Y10S117/904 , Y10S438/974
摘要： There is provided a high quality epitaxial water on which the density of microscopic defects in the epitaxial layer is reduced to keep the GOI thereof sufficiently high and to reduce a leakage current at the P-N junction thereof when devices are incorporated, to thereby improve the yield of such devices. In an epitaxial wafer obtained by forming an epitaxial layer on a substrate, the density of IR laser scatterers is 5.times.10.sup.5 pieces/cm.sup.3 or less throughout the epitaxial layer.
摘要翻译： 提供了一种高质量的外延水，其中外延层中的微观缺陷密度降低，以保持GOI足够高，并且当装置结合时，其PN结处的漏电流减小，从而提高了产量 这样的设备。 在通过在衬底上形成外延层获得的外延晶片中，IR激光散射体的密度在整个外延层中为5×10 5个/ cm 3以下。
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