公开(公告)号：US20050142877A1

公开(公告)日：2005-06-30

申请号：US10801884

申请日：2004-03-15

Applicant: Tu-Hao Yu ,  Pai-Hsuan Sun ,  Yu-Chia Chen

Inventor： Tu-Hao Yu ,  Pai-Hsuan Sun ,  Yu-Chia Chen

IPC: H01L21/3105 ,  H01L21/321 ,  H01L21/768 ,  H01L21/44 ,  H01L21/302 ,  H01L21/461

CPC classification number: H01L21/3212 ,  H01L21/31053 ,  H01L21/76819 ,  H01L21/7684

Abstract: A chemical-mechanical polishing (CMP) proximity correction method for polishing a wafer is provided. The wafer has a polish area and a protected area. The method includes forming a material layer over the wafer to cover the polish area and the protected area and then forming a protective layer over the material layer. Thereafter, the protective layer is patterned so that the remaining protective layer is at a distance away from the boundary of the polish area to reduce shadowing effects. Because the boundary of the protective layer above the material layer recedes to an area at a distance away from polish area, the whole polish area can be cleanly polished.

Abstract translation: 提供了一种用于抛光晶片的化学机械抛光（CMP）接近校正方法。 晶圆具有抛光区域和保护区域。 该方法包括在晶片上形成材料层以覆盖抛光区域和保护区域，然后在材料层上形成保护层。 此后，保护层被图案化，使得剩余的保护层距离抛光区域的边界一定距离以减少遮蔽效应。 因为材料层之上的保护层的边界退回到距离抛光区域一定距离的区域，所以整个抛光区域可以被清洁地抛光。

公开(公告)号：US07138654B2

公开(公告)日：2006-11-21

申请号：US10801884

申请日：2004-03-15

Applicant: Tu-Hao Yu ,  Pai-Hsuan Sun ,  Yu-Chia Chen

Inventor： Tu-Hao Yu ,  Pai-Hsuan Sun ,  Yu-Chia Chen

IPC: H01L23/58

CPC classification number: H01L21/3212 ,  H01L21/31053 ,  H01L21/76819 ,  H01L21/7684

Abstract: A chemical-mechanical polishing (CMP) proximity correction method for polishing a wafer is provided. The wafer has a polish area and a protected area. The method includes forming a material layer over the wafer to cover the polish area and the protected area and then forming a protective layer over the material layer. Thereafter, the protective layer is patterned so that the remaining protective layer is at a distance away from the boundary of the polish area to reduce shadowing effects. Because the boundary of the protective layer above the material layer recedes to an area at a distance away from polish area, the whole polish area can be cleanly polished.

Abstract translation: 提供了一种用于抛光晶片的化学机械抛光（CMP）接近校正方法。 晶圆具有抛光区域和保护区域。 该方法包括在晶片上形成材料层以覆盖抛光区域和保护区域，然后在材料层上形成保护层。 此后，保护层被图案化，使得剩余的保护层距离抛光区域的边界一定距离以减少遮蔽效应。 因为材料层之上的保护层的边界退回到距离抛光区域一定距离的区域，所以整个抛光区域可以被清洁地抛光。

公开(公告)号：US06368910B1

公开(公告)日：2002-04-09

申请号：US09721796

申请日：2000-11-24

Applicant: Bor-Bu Sheu ,  Chung-Ming Chu ,  Ming-Chung Chiang ,  Min-Chieh Yang ,  Wen-Chung Liu ,  Jong-Bor Wang ,  Pai-Hsuan Sun

Inventor： Bor-Bu Sheu ,  Chung-Ming Chu ,  Ming-Chung Chiang ,  Min-Chieh Yang ,  Wen-Chung Liu ,  Jong-Bor Wang ,  Pai-Hsuan Sun

IPC: H01L218242

CPC classification number: H01L28/91 ,  H01L21/76877 ,  H01L23/485 ,  H01L28/55 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method for fabricating semiconductor memory cells such as dynamic random access memory (DRAM) and ferroelectric random access memory (FRAM) with improved contact between the capacitor electrode and the underneath device area. It includes the following main steps of: (1) forming a first dielectric layer on a wafer surface; (2) forming at least one through opening in the first dielectric layer; (3) forming a ruthenium based plug in the through opening; and (4) forming a capacitor in contact with the ruthenium based plug. The ruthenium based plug can be made of ruthenium metal, conductive ruthenium oxide, or a stack of conductive ruthenium oxide and ruthenium metal. The method allows the memory cell to be made without the need for a barrier, which is required to protect the storage electrode from reacting with Si atoms during the fabrication process.

Abstract translation: 一种用于制造诸如动态随机存取存储器（DRAM）和铁电随机存取存储器（FRAM）的半导体存储器单元的方法，其具有改善的电容器电极和下面的器件区域之间的接触。 它包括以下主要步骤：（1）在晶片表面上形成第一电介质层; （2）在所述第一电介质层中形成至少一个通孔; （3）在通孔中形成钌基塞; 和（4）形成与钌基塞接触的电容器。 钌基塞可以由钌金属，导电氧化钌或导电氧化钌和金属钌的叠层制成。 该方法允许在不需要屏蔽的情况下制造存储单元，这是在制造过程中保护存储电极不与Si原子反应所需要的。