摘要:
Method of providing a semiconductor device with an inorganic electrically insulative layer, the device having exposed semiconductor surfaces and electrically conductive metal end terminations, in which the device is reacted with phosphoric acid to form a phosphate on the exposed surfaces of the semiconductor but not on the metal end terminations, and in which the device is thereafter barrel plated in a conventional electrical barrel plating process and the plating is provided only on the end terminations because the phosphate is not electrically conductive.
摘要:
The present invention relates generally to methods for the synthesis of various solids such as diamonds, diamonds films, boron nitride and other similar materials. This invention specifically relates to utilizing novel sources of reaction species (e.g., in the case of diamond formation, novel sources of carbon and/or hydrogen and/or seeds) for the manufacture of various materials and the use of such materials for various commercial purposes.
摘要:
A method of providing a semiconductor device with an inorganic electrically insulative layer, the device having exposed semiconductor surfaces and electrically conductive metal end terminations, in which the device is reacted with phosphoric acid to form a phosphate on the exposed surfaces of the semiconductor but not on the metal end terminations, and in which the device is thereafter barrel plated in a conventional electrical barrel plating process and the plating is provided only on the end terminations because the phosphate is not electrically conductive.