Zinc phosphate coating for varistor
    1.
    发明授权
    Zinc phosphate coating for varistor 失效
    压敏电阻用磷酸锌涂层

    公开(公告)号:US5757263A

    公开(公告)日:1998-05-26

    申请号:US786307

    申请日:1997-01-22

    CPC分类号: H01C7/18 H01C1/034 H01C7/102

    摘要: Method of providing a semiconductor device with an inorganic electrically insulative layer, the device having exposed semiconductor surfaces and electrically conductive metal end terminations, in which the device is reacted with phosphoric acid to form a phosphate on the exposed surfaces of the semiconductor but not on the metal end terminations, and in which the device is thereafter barrel plated in a conventional electrical barrel plating process and the plating is provided only on the end terminations because the phosphate is not electrically conductive.

    摘要翻译: 提供具有无机电绝缘层的半导体器件的方法,该器件具有暴露的半导体表面和导电金属端接端,其中器件与磷酸反应以在半导体的暴露表面上形成磷酸盐,但不在 金属端接端,并且其中该器件此后在常规的电镀层工艺中进行滚镀,并且由于磷酸盐不导电,仅在端接端上提供电镀。

    Zinc phosphate coating for varistor and method
    3.
    发明授权
    Zinc phosphate coating for varistor and method 失效
    压敏电阻磷酸锌涂层及方法

    公开(公告)号:US5614074A

    公开(公告)日:1997-03-25

    申请号:US355220

    申请日:1994-12-09

    CPC分类号: H01C7/18 H01C1/034 H01C7/102

    摘要: A method of providing a semiconductor device with an inorganic electrically insulative layer, the device having exposed semiconductor surfaces and electrically conductive metal end terminations, in which the device is reacted with phosphoric acid to form a phosphate on the exposed surfaces of the semiconductor but not on the metal end terminations, and in which the device is thereafter barrel plated in a conventional electrical barrel plating process and the plating is provided only on the end terminations because the phosphate is not electrically conductive.

    摘要翻译: 一种提供具有无机电绝缘层的半导体器件的方法,该器件具有暴露的半导体表面和导电金属端接端,其中器件与磷酸反应以在半导体的暴露表面上形成磷酸盐,但不在 金属端部端子,并且其中该器件此后在常规的电镀层工艺中进行滚镀,并且由于磷酸盐不导电,仅在端部端子上提供电镀。