公开(公告)号：US06342195B1

公开(公告)日：2002-01-29

申请号：US08788000

申请日：1997-01-24

申请人： Rustum Roy ,  Russell Messier ,  Hardial S. Dewan ,  Andrzej Badzian ,  Palaniappan Ravindranathan

发明人： Rustum Roy ,  Russell Messier ,  Hardial S. Dewan ,  Andrzej Badzian ,  Palaniappan Ravindranathan

IPC分类号： G01B3106

CPC分类号： C01B32/25

摘要： The present invention relates generally to methods for the synthesis of various solids such as diamonds, diamonds films, boron nitride and other similar materials. This invention specifically relates to utilizing novel sources of reaction species (e.g., in the case of diamond formation, novel sources of carbon and/or hydrogen and/or seeds) for the manufacture of various materials and the use of such materials for various commercial purposes.

摘要翻译： 本发明一般涉及用于合成各种固体的方法，例如金刚石，金刚石膜，氮化硼和其它类似材料。 本发明具体涉及利用新型反应物质来源（例如，在金刚石形成的情况下，碳和/或氢和/或种子的新来源）用于制造各种材料以及用于各种商业目的的这种材料的使用 。

公开(公告)号：US5757263A

公开(公告)日：1998-05-26

申请号：US786307

申请日：1997-01-22

申请人： Palaniappan Ravindranathan

发明人： Palaniappan Ravindranathan

IPC分类号： H01C7/10 ,  H01C1/034 ,  H01C7/102 ,  H01C7/18

CPC分类号： H01C7/18 ,  H01C1/034 ,  H01C7/102

摘要： Method of providing a semiconductor device with an inorganic electrically insulative layer, the device having exposed semiconductor surfaces and electrically conductive metal end terminations, in which the device is reacted with phosphoric acid to form a phosphate on the exposed surfaces of the semiconductor but not on the metal end terminations, and in which the device is thereafter barrel plated in a conventional electrical barrel plating process and the plating is provided only on the end terminations because the phosphate is not electrically conductive.

摘要翻译： 提供具有无机电绝缘层的半导体器件的方法，该器件具有暴露的半导体表面和导电金属端接端，其中器件与磷酸反应以在半导体的暴露表面上形成磷酸盐，但不在 金属端接端，并且其中该器件此后在常规的电镀层工艺中进行滚镀，并且由于磷酸盐不导电，仅在端接端上提供电镀。

公开(公告)号：US5614074A

公开(公告)日：1997-03-25

申请号：US355220

申请日：1994-12-09

申请人： Palaniappan Ravindranathan

发明人： Palaniappan Ravindranathan

IPC分类号： H01C7/10 ,  H01C1/034 ,  H01C7/102 ,  H01C7/18 ,  H01C7/112

CPC分类号： H01C7/18 ,  H01C1/034 ,  H01C7/102

摘要： A method of providing a semiconductor device with an inorganic electrically insulative layer, the device having exposed semiconductor surfaces and electrically conductive metal end terminations, in which the device is reacted with phosphoric acid to form a phosphate on the exposed surfaces of the semiconductor but not on the metal end terminations, and in which the device is thereafter barrel plated in a conventional electrical barrel plating process and the plating is provided only on the end terminations because the phosphate is not electrically conductive.

摘要翻译： 一种提供具有无机电绝缘层的半导体器件的方法，该器件具有暴露的半导体表面和导电金属端接端，其中器件与磷酸反应以在半导体的暴露表面上形成磷酸盐，但不在 金属端部端子，并且其中该器件此后在常规的电镀层工艺中进行滚镀，并且由于磷酸盐不导电，仅在端部端子上提供电镀。