公开(公告)号：US07995402B2

公开(公告)日：2011-08-09

申请号：US12966430

申请日：2010-12-13

Applicant: Parag Banerjee ,  Terry Gafron ,  Fernando Gonzalez

Inventor： Parag Banerjee ,  Terry Gafron ,  Fernando Gonzalez

IPC: G11C16/14

CPC classification number: H01L27/228 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C16/0483 ,  H01L27/11521

Abstract: A semiconductor magnetic memory device has a magnetic tunneling junction formed over a memory cell. The memory cell has a control gate surrounded by a floating gate. The floating gate is coupled to the magnetic tunneling junction through a pinning layer that maintains the magnetic orientation of the lower magnetic layer of the junction. A current through a selected word line, coupled to the control gate, generates a first magnetic field. A current through a cell select line generates a second magnetic field that is orthogonal to the first magnetic field. This changes the magnetic orientation of the upper magnetic layer of the junction to lower its resistance, thus allowing a write/erase voltage on a program/erase line to program/erase the floating gate.

Abstract translation: 半导体磁存储器件具有形成在存储单元上的磁性隧道结。 存储单元具有由浮动栅极包围的控制栅极。 浮动栅极通过钉扎层耦合到磁性隧道结，该钉扎层保持结的下部磁性层的磁性取向。 耦合到控制栅极的选定字线的电流产生第一磁场。 通过单元选择线的电流产生与第一磁场正交的第二磁场。 这改变了结的上部磁性层的磁性取向以降低其电阻，从而允许编程/擦除线上的写入/擦除电压对浮动栅极进行编程/擦除。

公开(公告)号：US08374037B2

公开(公告)日：2013-02-12

申请号：US13186796

申请日：2011-07-20

Applicant: Parag Banerjee ,  Terry Gafron ,  Fernando Gonzalez

Inventor： Parag Banerjee ,  Terry Gafron ,  Fernando Gonzalez

IPC: G11C16/10

CPC classification number: H01L27/228 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C16/0483 ,  H01L27/11521

Abstract: A semiconductor magnetic memory device has a magnetic tunneling junction formed over a memory cell. The memory cell has a control gate surrounded by a floating gate. The floating gate is coupled to the magnetic tunneling junction through a pinning layer that maintains the magnetic orientation of the lower magnetic layer of the junction. A current through a selected word line, coupled to the control gate, generates a first magnetic field. A current through a cell select line generates a second magnetic field that is orthogonal to the first magnetic field. This changes the magnetic orientation of the upper magnetic layer of the junction to lower its resistance, thus allowing a write/erase voltage on a program/erase line to program/erase the floating gate.

Abstract translation: 半导体磁存储器件具有形成在存储单元上的磁性隧道结。 存储单元具有由浮动栅极包围的控制门。 浮动栅极通过钉扎层耦合到磁性隧道结，该钉扎层保持结的下部磁性层的磁性取向。 耦合到控制栅极的选定字线的电流产生第一磁场。 通过单元选择线的电流产生与第一磁场正交的第二磁场。 这改变了结的上部磁性层的磁性取向以降低其电阻，从而允许编程/擦除线上的写入/擦除电压对浮动栅极进行编程/擦除。

公开(公告)号：US20110080783A1

公开(公告)日：2011-04-07

申请号：US12966430

申请日：2010-12-13

Applicant: Parag Banerjee ,  Terry Grafron ,  Fernando Gonzalez

Inventor： Parag Banerjee ,  Terry Grafron ,  Fernando Gonzalez

IPC: G11C11/15

CPC classification number: H01L27/228 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C16/0483 ,  H01L27/11521

Abstract: A semiconductor magnetic memory device has a magnetic tunneling junction formed over a memory cell. The memory cell has a control gate surrounded by a floating gate. The floating gate is coupled to the magnetic tunneling junction through a pinning layer that maintains the magnetic orientation of the lower magnetic layer of the junction. A current through a selected word line, coupled to the control gate, generates a first magnetic field. A current through a cell select line generates a second magnetic field that is orthogonal to the first magnetic field. This changes the magnetic orientation of the upper magnetic layer of the junction to lower its resistance, thus allowing a write/erase voltage on a program/erase line to program/erase the floating gate.

Abstract translation: 半导体磁存储器件具有在存储单元上形成的磁隧道结。 存储单元具有由浮动栅极包围的控制栅极。 浮动栅极通过钉扎层耦合到磁性隧道结，该钉扎层保持结的下部磁性层的磁性取向。 耦合到控制栅极的选定字线的电流产生第一磁场。 通过单元选择线的电流产生与第一磁场正交的第二磁场。 这改变了结的上部磁性层的磁性取向以降低其电阻，从而允许编程/擦除线上的写入/擦除电压对浮动栅极进行编程/擦除。

公开(公告)号：US20090108252A1

公开(公告)日：2009-04-30

申请号：US12285005

申请日：2008-09-26

Applicant: Parag Banerjee ,  Sang Bok Lee ,  Israel Perez ,  Erin Robertson ,  Gary W. Rubloff

Inventor： Parag Banerjee ,  Sang Bok Lee ,  Israel Perez ,  Erin Robertson ,  Gary W. Rubloff

IPC: H01L29/06 ,  H01L21/20

CPC classification number: H01G11/46 ,  H01G4/008 ,  H01G4/33 ,  H01G11/24 ,  H01L28/82 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/0725 ,  Y02E10/50 ,  Y02E60/13

Abstract: An apparatus, system, and method are provided for a lateral two-terminal nanotube device configured to capture and generate energy, to store electrical energy, and to integrate these functions with power management circuitry. The lateral nanotube device can include a substrate, an anodic oxide material disposed on the substrate, and a column disposed in the anodic oxide material extending from one distal end of the anodic oxide material to another end of the anodic oxide material. The lateral nanotube device further can include a first material disposed within the column, and a second material disposed within the column. The first material fills a distal end of the column and gradiently decreases towards another distal end of the column along inner walls of the column. The second material fills the another distal end of the column and gradiently decreases towards the distal end of the column within the first material.

Abstract translation: 提供了一种用于横向两端纳米管装置的装置，系统和方法，其被配置为捕获和产生能量，存储电能并将这些功能与功率管理电路集成。 横向纳米管装置可以包括基板，设置在基板上的阳极氧化物材料，以及设置在从阳极氧化物材料的一个远端延伸到阳极氧化物材料的另一端的阳极氧化物材料中的列。 横向纳米管装置还可以包括设置在柱内的第一材料和设置在柱内的第二材料。 第一种材料填充柱的远端，并且沿柱的内壁朝着塔的另一远端逐渐减小。 第二材料填充柱的另一个远端，并且在第一材料内朝向柱的远端逐渐减小。

公开(公告)号：US11094881B2

公开(公告)日：2021-08-17

申请号：US16111558

申请日：2018-08-24

Applicant: Parag Banerjee ,  Peifu Cheng ,  Xiao Chen ,  Yoon Myung

Inventor： Parag Banerjee ,  Peifu Cheng ,  Xiao Chen ,  Yoon Myung

IPC: H01L45/00 ,  C23C16/30

Abstract: Perovskite films are known to be useful in many different technologies, including solar panels and memristors. Most perovskites contain lead which is undesirable for many reasons. It has been found that bismuth can be used in place of lead in preparing perovskite thin films. Additionally, when chemical vapor deposition is used to prepare the films instead of traditional solution phase methods, the films show greatly improved performance in electronic applications. Additionally, the present disclosure is directed to the use of perovskites in memory devices.

公开(公告)号：US20120280209A1

公开(公告)日：2012-11-08

申请号：US13505569

申请日：2010-10-25

Applicant: Dawn Bonnell ,  Parag Banerjee ,  David Conklin ,  Sanjini Nanayakkara

Inventor： Dawn Bonnell ,  Parag Banerjee ,  David Conklin ,  Sanjini Nanayakkara

IPC: H01L51/46

CPC classification number: H01L51/42 ,  Y02E10/549

Abstract: An electro-optical device includes a substrate on which first and second electrodes are formed. A plurality of nanoparticles are arrayed on the surface of the substrate between the first and second electrodes. The arrayed nanoparticles exhibit plasmonic activity in at least one wavelength band. A plurality of linking molecules are coupled between respective adjacent ones of the nanoparticles and between each of the electrodes and nanoparticles that are adjacent to the electrodes. The linking molecules are selected to exhibit photo-activity that is complementary to the arrayed nanoparticles.

Abstract translation: 电光装置包括其上形成有第一和第二电极的基板。 多个纳米颗粒被排列在第一和第二电极之间的衬底的表面上。 阵列纳米颗粒在至少一个波长带中表现出等离子体活性。 多个连接分子耦合在各个相邻的纳米颗粒之间，并且在每个电极和与电极相邻的纳米颗粒之间。 选择连接分子以显示与排列的纳米颗粒互补的光活性。

公开(公告)号：US07852668B2

公开(公告)日：2010-12-14

申请号：US12360496

申请日：2009-01-27

Applicant: Parag Banerjee ,  Terry Gafron ,  Fernando Gonzalez

Inventor： Parag Banerjee ,  Terry Gafron ,  Fernando Gonzalez

IPC: G11C11/15

CPC classification number: H01L27/228 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C16/0483 ,  H01L27/11521

Abstract: A semiconductor magnetic memory device has a magnetic tunneling junction formed over a memory cell. The memory cell has a control gate surrounded by a floating gate. The floating gate is coupled to the magnetic tunneling junction through a pinning layer that maintains the magnetic orientation of the lower magnetic layer of the junction. A current through a selected word line, coupled to the control gate, generates a first magnetic field. A current through a cell select line generates a second magnetic field that is orthogonal to the first magnetic field. This changes the magnetic orientation of the upper magnetic layer of the junction to lower its resistance, thus allowing a write/erase voltage on a program/erase line to program/erase the floating gate.

Abstract translation: 半导体磁存储器件具有形成在存储单元上的磁性隧道结。 存储单元具有由浮动栅极包围的控制栅极。 浮动栅极通过钉扎层耦合到磁性隧道结，该钉扎层保持结的下部磁性层的磁性取向。 耦合到控制栅极的选定字线的电流产生第一磁场。 通过单元选择线的电流产生与第一磁场正交的第二磁场。 这改变了结的上部磁性层的磁性取向以降低其电阻，从而允许编程/擦除线上的写入/擦除电压对浮动栅极进行编程/擦除。

公开(公告)号：US07486550B2

公开(公告)日：2009-02-03

申请号：US11447709

申请日：2006-06-06

Applicant: Parag Banerjee ,  Terry Gafron ,  Fernando Gonzalez

Inventor： Parag Banerjee ,  Terry Gafron ,  Fernando Gonzalez

IPC: G11C11/15

CPC classification number: H01L27/228 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C16/0483 ,  H01L27/11521

Abstract: A semiconductor magnetic memory device has a magnetic tunneling junction formed over a memory cell. The memory cell has a control gate surrounded by a floating gate. The floating gate is coupled to the magnetic tunneling junction through a pinning layer that maintains the magnetic orientation of the lower magnetic layer of the junction. A current through a selected word line, coupled to the control gate, generates a first magnetic field. A current through a cell select line generates a second magnetic field that is orthogonal to the first magnetic field. This changes the magnetic orientation of the upper magnetic layer of the junction to lower its resistance, thus allowing a write/erase voltage on a program/erase line to program/erase the floating gate.

Abstract translation: 半导体磁存储器件具有形成在存储单元上的磁性隧道结。 存储单元具有由浮动栅极包围的控制栅极。 浮动栅极通过钉扎层耦合到磁性隧道结，该钉扎层保持结的下部磁性层的磁性取向。 耦合到控制栅极的选定字线的电流产生第一磁场。 通过单元选择线的电流产生与第一磁场正交的第二磁场。 这改变了结的上部磁性层的磁性取向以降低其电阻，从而允许编程/擦除线上的写入/擦除电压对浮动栅极进行编程/擦除。

公开(公告)号：US20070279977A1

公开(公告)日：2007-12-06

申请号：US11447709

申请日：2006-06-06

Applicant: Parag Banerjee ,  Terry Gafron ,  Fernando Gonzalez

Inventor： Parag Banerjee ,  Terry Gafron ,  Fernando Gonzalez

IPC: G11C11/14

CPC classification number: H01L27/228 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C16/0483 ,  H01L27/11521

Abstract: A semiconductor magnetic memory device has a magnetic tunneling junction formed over a memory cell. The memory cell has a control gate surrounded by a floating gate. The floating gate is coupled to the magnetic tunneling junction through a pinning layer that maintains the magnetic orientation of the lower magnetic layer of the junction. A current through a selected word line, coupled to the control gate, generates a first magnetic field. A current through a cell select line generates a second magnetic field that is orthogonal to the first magnetic field. This changes the magnetic orientation of the upper magnetic layer of the junction to lower its resistance, thus allowing a write/erase voltage on a program/erase line to program/erase the floating gate.

Abstract translation: 半导体磁存储器件具有形成在存储单元上的磁性隧道结。 存储单元具有由浮动栅极包围的控制栅极。 浮动栅极通过钉扎层耦合到磁性隧道结，该钉扎层保持结的下部磁性层的磁性取向。 耦合到控制栅极的选定字线的电流产生第一磁场。 通过单元选择线的电流产生与第一磁场正交的第二磁场。 这改变了结的上部磁性层的磁性取向以降低其电阻，从而允许编程/擦除线上的写入/擦除电压对浮动栅极进行编程/擦除。

公开(公告)号：US20190074439A1

公开(公告)日：2019-03-07

申请号：US16111558

申请日：2018-08-24

Applicant: Parag Banerjee ,  Peifu Cheng ,  Xiao Chen ,  Yoon Myung

Inventor： Parag Banerjee ,  Peifu Cheng ,  Xiao Chen ,  Yoon Myung

IPC: H01L45/00

Abstract: Perovskite films are known to be useful in many different technologies, including solar panels and memristors. Most perovskites contain lead which is undesirable for many reasons. It has been found that bismuth can be used in place of lead in preparing perovskite thin films. Additionally, when chemical vapor deposition is used to prepare the films instead of traditional solution phase methods, the films show greatly improved performance in electronic applications. Additionally, the present disclosure is directed to the use of perovskites in memory devices.