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公开(公告)号：US20060141808A1
公开(公告)日：2006-06-29
申请号：US11356697
申请日：2006-02-17
申请人： Ernst Granneman , Vladimir Kuznetsov , Xavier Pages , Pascal Vermont , Herbert Terhorst , Gert-Jan Snijders
发明人： Ernst Granneman , Vladimir Kuznetsov , Xavier Pages , Pascal Vermont , Herbert Terhorst , Gert-Jan Snijders
IPC分类号： H01L21/26 , H01L21/324 , H01L21/42 , H01L21/477
CPC分类号： H01L21/324 , H01L21/42 , H01L21/477 , H01L21/67109 , H01L21/67248 , H01L21/67784 , H01L21/6838
摘要： A substrate undergoes a semiconductor fabrication process at different temperatures in a reactor without changing the temperature of the reactor. The substrate is held suspended by flowing gas between two heated surfaces of the reactor. Moving the two heated surfaces in close proximity with the substrate for a particular time duration heats the substrate to a desired temperature. The desired temperature is then maintained by distancing the heated surfaces from the substrate and holding the heated surface at the increased distance to minimize further substrate heating.
摘要翻译： 衬底在反应器中在不改变反应器温度的情况下在不同温度下进行半导体制造工艺。 通过在反应器的两个加热表面之间流动气体将基板保持悬浮。 将两个加热的表面紧邻衬底移动特定的持续时间将衬底加热到所需的温度。 然后通过将加热的表面与衬底隔开并将加热的表面保持在增加的距离来保持所需的温度，以使进一步的衬底加热最小化。
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公开(公告)号：US20050095873A1
公开(公告)日：2005-05-05
申请号：US10700298
申请日：2003-10-31
IPC分类号： H01L21/00 , H01L21/26 , H01L21/324 , H01L21/42 , H01L21/477 , H01L21/683
CPC分类号： H01L21/67109 , H01L21/324 , H01L21/6838
摘要： A substrate undergoes a semiconductor fabrication process at different temperatures in a reactor without changing the temperature of the reactor. The substrate is held suspended by flowing gas between two heated surfaces of the reactor. Moving the two heated surfaces in close proximity with the substrate for a particular time duration heats the substrate to a desired temperature. The desired temperature is then maintained by distancing the heated surfaces from the substrate and holding the heated surface at the increased distance to minimize further substrate heating.
摘要翻译： 衬底在反应器中在不改变反应器温度的情况下在不同温度下进行半导体制造工艺。 通过在反应器的两个加热表面之间流动气体将基板保持悬浮。 将两个加热的表面紧邻衬底移动特定的持续时间将衬底加热到所需的温度。 然后通过将加热的表面与衬底隔开并将加热的表面保持在增加的距离来保持所需的温度，以使进一步的衬底加热最小化。
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公开(公告)号：US20050017310A1
公开(公告)日：2005-01-27
申请号：US10866643
申请日：2004-06-10
IPC分类号： H01L21/28 , H01L21/24 , H01L21/285 , H01L21/336 , H01L21/8234 , H01L27/088 , H01L29/78 , H01L29/76
CPC分类号： H01L21/28518 , H01L29/665
摘要： A method of self-aligned silicidation involves interruption of the silicidation process prior to complete reaction of the blanket material (e.g., metal) in regions directly overlying patterned and exposed other material (e.g., silicon). Diffusion of excess blanket material from over other regions (e.g., overlying insulators) is thus prevented. Control and uniformity are insured by use of conductive rapid thermal annealing in hot wall reactors, with massive heated plates closely spaced from the substrate surfaces. Interruption is particularly facilitated by forced cooling, preferably also by conductive thermal exchange with closely spaced, massive plates.
摘要翻译： 自对准硅化的方法包括在直接覆盖图案化和暴露的其它材料（例如硅）的区域中的覆盖材料（例如金属）完全反应之前中断硅化工艺。 从而防止了过量的覆盖材料从其它区域扩散（例如，覆盖绝缘体）。 通过在热壁反应器中使用导电快速热退火来保护控制和均匀性，其中大量加热板与基板表面紧密地间隔开。 通过强制冷却特别容易地破坏中断，优选也通过与间隔紧密的块状板进行导电热交换。
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4.发明申请Methods of forming films in semiconductor devices with solid state reactants 有权在具有固态反应物的半导体器件中形成膜的方法公开(公告)号：US20070059932A1
公开(公告)日：2007-03-15
申请号：US11595441
申请日：2006-11-09
IPC分类号： H01L21/44
CPC分类号： H01L21/28518 , H01L29/665
摘要： A method of self-aligned silicidation involves interruption of the silicidation process prior to complete reaction of the blanket material (e.g., metal) in regions directly overlying patterned and exposed other material (e.g., silicon). Diffusion of excess blanket material from over other regions (e.g., overlying insulators) is thus prevented. Control and uniformity are insured by use of conductive rapid thermal annealing in hot wall reactors, with massive heated plates closely spaced from the substrate surfaces. Interruption is particularly facilitated by forced cooling, preferably also by conductive thermal exchange with closely spaced, massive plates.
摘要翻译： 自对准硅化的方法包括在直接覆盖图案化和暴露的其它材料（例如硅）的区域中的覆盖材料（例如金属）完全反应之前中断硅化工艺。 从而防止了过量的覆盖材料从其它区域扩散（例如，覆盖绝缘体）。 通过在热壁反应器中使用导电快速热退火来保护控制和均匀性，其中大量加热板与基板表面紧密地间隔开。 通过强制冷却特别容易地破坏中断，优选也通过与间隔紧密的块状板进行导电热交换。
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5.发明授权公开(公告)号：US06843201B2
公开(公告)日：2005-01-18
申请号：US10141517
申请日：2002-05-08
申请人： Vladimir Kuznetsov , Ruud Grisel , Ernst Granneman
发明人： Vladimir Kuznetsov , Ruud Grisel , Ernst Granneman
CPC分类号： H01L21/67248 , C23C16/4583 , C23C16/46 , C23C16/52 , C30B33/02
摘要： A reactor for heat treatment of a substrate having a process chamber within a substrate enclosing structure, and a support structure configured to position a substrate at a predetermined spacing between the upper part and the bottom part within the process chamber during processing. Streams of gas may lift the substrate from the support structure so that the substrate floats. A plurality of heating elements is associated with at least one of the upper part and the bottom part and are arranged to define heating zones. A controller controls the heating elements individually so that each heating zone is configured to have a predetermined temperature determined by the controller. The heating zones provide for a non-uniform heating laterally across the substrate.
摘要翻译： 一种用于热处理在衬底封闭结构内具有处理室的衬底的反应器，以及支撑结构，其被配置为在处理期间将衬底定位在处理室内的上部和底部之间的预定间隔处。 气流可以从支撑结构提起衬底，使得衬底漂浮。 多个加热元件与上部和底部中的至少一个相关联并且被布置成限定加热区。 控制器分别控制加热元件，使得每个加热区被配置成具有由控制器确定的预定温度。 加热区域横跨衬底提供不均匀的加热。
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6.发明授权Methods of forming films in semiconductor devices with solid state reactants 有权在具有固态反应物的半导体器件中形成膜的方法公开(公告)号：US07691750B2
公开(公告)日：2010-04-06
申请号：US11595441
申请日：2006-11-09
IPC分类号： H01L21/44
CPC分类号： H01L21/28518 , H01L29/665
摘要： A method of self-aligned silicidation involves interruption of the silicidation process prior to complete reaction of the blanket material (e.g., metal) in regions directly overlying patterned and exposed other material (e.g., silicon). Diffusion of excess blanket material from over other regions (e.g., overlying insulators) is thus prevented. Control and uniformity are insured by use of conductive rapid thermal annealing in hot wall reactors, with massive heated plates closely spaced from the substrate surfaces. Interruption is particularly facilitated by forced cooling, preferably also by conductive thermal exchange with closely spaced, massive plates.
摘要翻译： 自对准硅化的方法包括在直接覆盖图案化和暴露的其它材料（例如硅）的区域中的覆盖材料（例如金属）完全反应之前中断硅化工艺。 从而防止了过量的覆盖材料从其它区域扩散（例如，覆盖绝缘体）。 通过在热壁反应器中使用导电快速热退火来保护控制和均匀性，其中大量加热板与基板表面紧密地间隔开。 通过强制冷却特别容易地破坏中断，优选也通过与间隔紧密的块状板进行导电热交换。
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公开(公告)号：US07153772B2
公开(公告)日：2006-12-26
申请号：US10866643
申请日：2004-06-10
IPC分类号： H01L21/44
CPC分类号： H01L21/28518 , H01L29/665
摘要： A method of self-aligned silicidation involves interruption of the silicidation process prior to complete reaction of the blanket material (e.g., metal) in regions directly overlying patterned and exposed other material (e.g., silicon). Diffusion of excess blanket material from over other regions (e.g., overlying insulators) is thus prevented. Control and uniformity are insured by use of conductive rapid thermal annealing in hot wall reactors, with massive heated plates closely spaced from the substrate surfaces. Interruption is particularly facilitated by forced cooling, preferably also by conductive thermal exchange with closely spaced, massive plates.
摘要翻译： 自对准硅化的方法包括在直接覆盖图案化和暴露的其它材料（例如硅）的区域中的覆盖材料（例如金属）完全反应之前中断硅化工艺。 从而防止了过量的覆盖材料从其它区域扩散（例如，覆盖绝缘体）。 通过在热壁反应器中使用导电快速热退火来保护控制和均匀性，其中大量加热板与基板表面紧密地间隔开。 通过强制冷却特别容易地破坏中断，优选也通过与间隔紧密的块状板进行导电热交换。
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公开(公告)号：US08002463B2
公开(公告)日：2011-08-23
申请号：US12138848
申请日：2008-06-13
摘要： The publication discloses a method for determining a temperature of a substrate, comprising: providing a gas channel that is confined by at least one wall having a certain wall temperature; providing a substrate in said gas channel, proximate to the at least one wall, such that a gap exists between a surface of the substrate and the at least one wall; providing a gas flow with a certain mass flow rate through said gas channel, which gas flow extends at least partially through said gap; determining a pressure drop in the gas flow along the gas channel; and deriving from said pressure drop the temperature of said substrate using a pre-determined relation between the pressure drop along the gas channel, the wall temperature and the temperature of the substrate, at said mass flow rate. Also disclosed is a device for implementing the disclosed method.
摘要翻译： 该出版物公开了一种用于确定衬底的温度的方法，包括：提供由具有一定壁温度的至少一个壁限制的气体通道; 在所述气体通道中靠近所述至少一个壁提供衬底，使得在所述衬底的表面和所述至少一个壁之间存在间隙; 提供具有通过所述气体通道的一定质量流速的气流，所述气流至少部分地延伸通过所述间隙; 确定沿气体通道的气流中的压降; 并且以所述质量流率，使用沿着气体通道的压降，基板的壁温度和温度之间的预定关系，从所述压力导出所述基板的温度。 还公开了一种用于实现所公开的方法的装置。
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公开(公告)号：US20130199448A1
公开(公告)日：2013-08-08
申请号：US13808392
申请日：2011-07-06
IPC分类号： C23C16/455 , C23C16/54 , B65G51/02
CPC分类号： C23C16/455 , B65G51/02 , B65G51/03 , C23C16/4412 , C23C16/45551 , C23C16/45557 , C23C16/54 , H01L21/67784
摘要： A method of contactlessly advancing a substrate (140), comprising: —providing a process tunnel (102), extending in a longitudinal direction and bounded by at least a first (120) and a second (134) wall; —providing first and second gas bearings (124, 134) by providing substantially laterally flowing gas alongside the first and second walls respectively; —bringing about a first longitudinal division of the process tunnel into a plurality of pressure segments (116), wherein the gas bearings (124, 34) in a pressure segment have an average gas pressure that is different from an average gas pressure of the gas bearings in an adjacent pressure segment; —providing a substrate (140) in between the first wall (120) and the second wall (130); and 1—allowing differences in average gas pressure between adjacent pressure segments (116) to drive the substrate along the longitudinal direction of the process tunnel.
摘要翻译： 一种非接触地推进衬底（140）的方法，包括：提供在纵向方向上延伸并由至少第一（120）和第二（134）壁限定的工艺通道（102）; 通过分别在第一和第二壁旁边提供基本上横向流动的气体来提供第一和第二气体轴承（124,134）; 围绕加工隧道的第一纵向划分成多个压力段（116），其中压力段中的气体轴承（124,34）具有与气体的平均气体压力不同的平均气体压力 相邻压力段的轴承; - 在第一壁（120）和第二壁（130）之间提供衬底（140）; 和1-允许相邻压力段（116）之间的平均气体压力的差异，以沿着处理隧道的纵向方向驱动衬底。
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10.发明授权Semiconductor processing parts having apertures with deposited coatings and methods for forming the same 有权具有沉积涂层的孔的半导体加工部件及其形成方法公开(公告)号：US07807222B2
公开(公告)日：2010-10-05
申请号：US11856418
申请日：2007-09-17
申请人： Vladimir Kuznetsov
发明人： Vladimir Kuznetsov
CPC分类号： C30B23/005 , C23C16/045 , C23C16/4404 , C23C16/45565 , C30B35/002 , H01L21/67103 , H01L21/67109 , Y10T29/41
摘要： Holes in semiconductor processing reactor parts are sized to facilitate deposition of protective coatings, such as by chemical vapor deposition at atmospheric pressure. In some embodiments, the holes each have a flow constriction that narrows the holes in one part and that also divides the holes into one or more other portions. In some embodiments, the aspect ratios of the one or more other portions are about 15:1 or less, or about 7:1 or less, and have a cylindrical or conical cross-sectional shape. The holes are coated with a protective coating, such as a silicon carbide coating, by chemical vapor deposition, including chemical vapor deposition at atmospheric pressure.
摘要翻译： 半导体处理反应器部件中的孔的尺寸适于促进保护涂层的沉积，例如通过大气压下的化学气相沉积。 在一些实施例中，孔各自具有流动收缩部，其使一部分中的孔变窄，并且还将孔分成一个或多个其它部分。 在一些实施例中，一个或多个其它部分的长宽比为约15:1或更小，或约7:1或更小，并且具有圆柱形或圆锥形横截面形状。 通过化学气相沉积（包括大气压下的化学气相沉积），用诸如碳化硅涂层的保护涂层涂覆孔。
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