公开(公告)号：US20070077778A1

公开(公告)日：2007-04-05

申请号：US11243157

申请日：2005-10-04

申请人： Ce Ma ,  Qing Wang ,  Patrick Helly ,  Graham McFarlane

发明人： Ce Ma ,  Qing Wang ,  Patrick Helly ,  Graham McFarlane

IPC分类号： H01L21/31

CPC分类号： H01L21/31633 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02274

摘要： Dielectric layers having a low dielectric constant are fabricated by using an asymmetric organocyclosiloxane as a precursor gas. The carbon content of the deposited layer is reduced to less than about 50 percent by use an oxidizing agent, a silicon containing compound, or a combination thereof.

摘要翻译： 通过使用不对称的有机环硅氧烷作为前体气体来制造介电常数低的介电层。 通过使用氧化剂，含硅化合物或其组合将沉积层的碳含量降低至小于约50％。

公开(公告)号：US20060269667A1

公开(公告)日：2006-11-30

申请号：US11400904

申请日：2006-04-10

申请人： Ce Ma ,  Qing Wang ,  Patrick Helly ,  Richard Hogle

发明人： Ce Ma ,  Qing Wang ,  Patrick Helly ,  Richard Hogle

IPC分类号： C23C16/00 ,  B32B9/04

CPC分类号： C23C16/45544 ,  C23C16/448 ,  C23C16/45525 ,  Y10T428/8305

摘要： A unique combination of solution stabilization and delivery technologies with special ALD operation is provided. A wide range of low volatility solid ALD precursors dissolved in solvents are used. Unstable solutes may be stabilized in solution and all of the solutions may be delivered at room temperature. After the solutions are vaporized, the vapor phase precursors and solvents are pulsed into a deposition chamber to assure true ALD film growth.