Semiconductor gamma radiation detector
    4.
    发明授权
    Semiconductor gamma radiation detector 失效
    半导体伽马辐射探测器

    公开(公告)号:US3949210A

    公开(公告)日:1976-04-06

    申请号:US531402

    申请日:1974-12-10

    摘要: A gamma radiation detector comprises a semiconductor body and two metal electrodes attached to two spaced surface zones of said semiconductor body, said detector being characterized by the combination of the following features: (a) The semiconductor body consists of a uniform semiconductor material of the same conductivity type; (b) Charge carriers of both types are mobile in the semiconductor material and the product of their mobility multipled by their free drift time (life) exceeds 10.sup..sup.-9 m.sup.2 V.sup..sup.-1 for each type of carrier; (c) An insulating layer which is thin in relation to the distance separating said two surface zones is interposed between at least one of said electrodes and the surface zone to which it is attached.

    摘要翻译: 伽马辐射检测器包括半导体本体和附接到所述半导体主体的两个间隔表面区域的两个金属电极,所述检测器的特征在于以下特征的组合:(a)半导体主体由均匀的半导体材料组成 导电型; (b)两种类型的电荷载体在半导体材料中是可移动的,并且对于每种类型的载体,其迁移率乘以其自由漂移时间(寿命)的乘积超过10 9mV 2 - 1; (c)相对于分离所述两个表面区域的距离而言,薄的绝缘层插入在所述电极中的至少一个和与其连接的表面区域之间。