公开(公告)号：US20080149020A1

公开(公告)日：2008-06-26

申请号：US12073146

申请日：2008-02-29

申请人： Erik Janzen ,  Peter Raback ,  Alexandre Ellison

发明人： Erik Janzen ,  Peter Raback ,  Alexandre Ellison

IPC分类号： C30B23/06 ,  C30B11/00

CPC分类号： C30B23/002 ,  C30B29/36 ,  C30B29/403 ,  Y10T117/1016

摘要： A method and a device to grow from the vapor phase, a single crystal of either SiC, a group III-nitride, or alloys thereof, at a growth rate and for a period of time sufficient to produce a crystal of preferably several centimeters length. The diameter of the growing crystal may be controlled. To prevent the formation of undesirable polycrystalline deposits on surfaces in the downstream vicinity of the single crystal growth area, the local supersaturation of at least one component of the material grown is lowered by introducing a separate gas flow comprising at least one halogen element or a combination of said halogen and hydrogen species.

摘要翻译： 一种从气相生长的方法和装置，其以SiC，III族氮化物或其合金的单晶以生长速率生长足以产生优选数厘米长的晶体的时间。 可以控制生长晶体的直径。 为了防止在单晶生长区域的下游附近的表面上形成不期望的多晶沉积物，通过引入包含至少一种卤素元素或组合的单独的气流来降低生长材料的至少一种组分的局部过饱和 的所述卤素和氢物质。

公开(公告)号：US20050000406A1

公开(公告)日：2005-01-06

申请号：US10830047

申请日：2004-04-23

申请人： Erik Janzen ,  Peter Raback ,  Alexandre Ellison

发明人： Erik Janzen ,  Peter Raback ,  Alexandre Ellison

IPC分类号： C01B21/06 ,  C30B23/00 ,  C30B25/14 ,  C30B29/36 ,  C30B29/38 ,  C30B29/40 ,  C30B1/00 ,  C30B3/00 ,  C30B5/00 ,  C30B9/00 ,  C30B11/00 ,  C30B17/00 ,  C30B21/02 ,  C30B28/02 ,  C30B28/06

CPC分类号： C30B23/002 ,  C30B29/36 ,  C30B29/403 ,  Y10T117/1016

摘要： A method and a device to grow from the vapor phase, a single crystal of either SiC, a group III-nitride, or alloys thereof, at a growth rate and for a period of time sufficient to produce a crystal of preferably several centimeters length. The diameter of the growing crystal may be controlled. To prevent the formation of undesirable polycrystalline deposits on surfaces in the downstream vicinity of the single crystal growth area, the local supersaturation of at least one component of the material grown is lowered by introducing a separate gas flow comprising at least one halogen element or a combination of said halogen and hydrogen species.

摘要翻译： 一种从气相生长的方法和装置，其以SiC，III族氮化物或其合金的单晶以生长速率生长足以产生优选数厘米长的晶体的时间。 可以控制生长晶体的直径。 为了防止在单晶生长区域的下游附近的表面上形成不期望的多晶沉积物，通过引入包含至少一种卤素元素或组合的单独的气流来降低生长材料的至少一种组分的局部过饱和 的所述卤素和氢物质。