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公开(公告)号:US20130200432A1
公开(公告)日:2013-08-08
申请号:US13809642
申请日:2011-07-07
申请人: Peter Stauß , Patrick Rode , Philipp Drechsel
发明人: Peter Stauß , Patrick Rode , Philipp Drechsel
IPC分类号: H01L21/36 , H01L29/267
CPC分类号: H01L29/267 , C30B25/18 , C30B29/403 , H01L21/02381 , H01L21/02433 , H01L21/02458 , H01L21/02505 , H01L21/0254 , H01L33/007 , H01L33/0079 , H01L33/02 , H01L33/382
摘要: A semiconductor component includes a semiconductor body based on a nitride compound semiconductor material, and a substrate on which the semiconductor body is arranged, wherein impurities are formed in the substrate in a targeted manner.
摘要翻译: 半导体部件包括基于氮化物化合物半导体材料的半导体本体,以及配置有半导体主体的基板,以目标方式在基板上形成杂质。