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1.发明授权Semiconductor device and method for forming passive circuit elements with through silicon vias to backside interconnect structures 有权用于通过硅通孔形成无源电路元件到背面互连结构的半导体器件和方法公开(公告)号：US07691747B2
公开(公告)日：2010-04-06
申请号：US11947617
申请日：2007-11-29
申请人： Yaojian Lin , Haijing Cao , Qing Zhang Zhang , Kang Chen , Jianmin Fang
发明人： Yaojian Lin , Haijing Cao , Qing Zhang Zhang , Kang Chen , Jianmin Fang
IPC分类号： H01L21/44
CPC分类号： H01L25/16 , H01L21/76898 , H01L23/3114 , H01L23/481 , H01L24/11 , H01L24/12 , H01L25/0652 , H01L2224/05571 , H01L2224/05573 , H01L2224/13022 , H01L2224/13025 , H01L2224/16 , H01L2224/2518 , H01L2924/00014 , H01L2924/01019 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/04941 , H01L2924/12044 , H01L2924/14 , H01L2924/19015 , H01L2924/19041 , H01L2924/19104 , H01L2924/19105 , H01L2224/05599
摘要： A semiconductor wafer contains a substrate having a plurality of active devices formed thereon. An analog circuit is formed on the substrate. The analog circuit can be an inductor, metal-insulator-metal capacitor, or resistor. The inductor is made with copper. A through substrate via (TSV) is formed in the substrate. A conductive material is deposited in the TSV in electrical contact with the analog circuit. An under bump metallization layer is formed on a backside of the substrate in electrical contact with the TSV. A solder material is deposited on the UBM layer. The solder material is reflowed to form a solder bump. A wire bond is formed on a top surface of the substrate. A redistribution layer is formed between the TSV and UBM. The analog circuit electrically connects through the TSV to the solder bump on the back side of the substrate.
摘要翻译： 半导体晶片包含其上形成有多个有源器件的衬底。 在基板上形成模拟电路。 模拟电路可以是电感，金属 - 绝缘体 - 金属电容或电阻。 电感由铜制成。 在衬底中形成贯穿衬底通孔（TSV）。 导电材料沉积在与模拟电路电接触的TSV中。 在与TSV电接触的衬底的背面上形成凸起下金属化层。 焊料材料沉积在UBM层上。 焊料材料被回流以形成焊料凸块。 在基板的顶表面上形成引线接合。 在TSV和UBM之间形成再分配层。 模拟电路通过TSV电连接到衬底背面的焊料凸块。
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2.发明申请Semiconductor Device and Method for Forming Passive Circuit Elements with Through Silicon Vias to Backside Interconnect Structures 有权用于形成具有通过硅通孔的无源电路元件到半导体互连结构的半导体器件和方法公开(公告)号：US20090140381A1
公开(公告)日：2009-06-04
申请号：US11947617
申请日：2007-11-29
申请人： Yaojian Lin , Haijing Cao , Qing Zhang Zhang , Kang Chen , Jianmin Fang
发明人： Yaojian Lin , Haijing Cao , Qing Zhang Zhang , Kang Chen , Jianmin Fang
CPC分类号： H01L25/16 , H01L21/76898 , H01L23/3114 , H01L23/481 , H01L24/11 , H01L24/12 , H01L25/0652 , H01L2224/05571 , H01L2224/05573 , H01L2224/13022 , H01L2224/13025 , H01L2224/16 , H01L2224/2518 , H01L2924/00014 , H01L2924/01019 , H01L2924/01077 , H01L2924/01078 , H01L2924/01079 , H01L2924/04941 , H01L2924/12044 , H01L2924/14 , H01L2924/19015 , H01L2924/19041 , H01L2924/19104 , H01L2924/19105 , H01L2224/05599
摘要： A semiconductor wafer contains a substrate having a plurality of active devices formed thereon. An analog circuit is formed on the substrate. The analog circuit can be an inductor, metal-insulator-metal capacitor, or resistor. The inductor is made with copper. A through substrate via (TSV) is formed in the substrate. A conductive material is deposited in the TSV in electrical contact with the analog circuit. An under bump metallization layer is formed on a backside of the substrate in electrical contact with the TSV. A solder material is deposited on the UBM layer. The solder material is reflowed to form a solder bump. A wire bond is formed on a top surface of the substrate. A redistribution layer is formed between the TSV and UBM. The analog circuit electrically connects through the TSV to the solder bump on the back side of the substrate.
摘要翻译： 半导体晶片包含其上形成有多个有源器件的衬底。 在基板上形成模拟电路。 模拟电路可以是电感，金属 - 绝缘体 - 金属电容或电阻。 电感由铜制成。 在衬底中形成贯穿衬底通孔（TSV）。 导电材料沉积在与模拟电路电接触的TSV中。 在与TSV电接触的衬底的背面上形成凸起下金属化层。 焊料材料沉积在UBM层上。 焊料材料被回流以形成焊料凸块。 在基板的顶表面上形成引线接合。 在TSV和UBM之间形成再分配层。 模拟电路通过TSV电连接到衬底背面的焊料凸块。
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