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公开(公告)号：US5817550A
公开(公告)日：1998-10-06
申请号：US611318
申请日：1996-03-05
IPC分类号： H01L21/20 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/786 , H01L21/268
CPC分类号： H01L21/268 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02686 , H01L27/1214 , H01L29/66757 , H01L29/78603 , H01L29/78675 , H01L29/78666
摘要： A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The process relies on techniques for depositing semiconductors, dielectrics, and metals at low temperatures; crystallizing and doping semiconductor layers in the TFT with a pulsed energy source; and creating top-gate self-aligned as well as back-gate TFT structures. The process enables the fabrication of amorphous and polycrystalline channel silicon TFTs at temperatures sufficiently low to prevent damage to plastic substrates. The process has use in large area low cost electronics, such as flat panel displays and portable electronics.
摘要翻译： 用于在塑料基板上形成薄膜晶体管（TFT）的工艺代替标准薄膜晶体管制造技术，并且使用足够低的处理温度，以便可以使用便宜的塑料基板代替标准玻璃，石英和硅晶片基板 。 该方法依赖于在低温下沉积半导体，电介质和金属的技术; 用脉冲能量源在TFT中结晶和掺杂半导体层; 并创建顶栅自对准以及背栅TFT结构。 该过程使得能够在足够低的温度下制造非晶硅和多晶硅硅TFT，以防止损坏塑料基板。 该方法可用于大面积低成本电子产品，如平板显示器和便携式电子产品。
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公开(公告)号：US06680485B1
公开(公告)日：2004-01-20
申请号：US09025006
申请日：1998-02-17
IPC分类号： H01L2904
CPC分类号： H01L27/1285 , H01L21/02422 , H01L21/02488 , H01L21/02532 , H01L21/02686 , H01L21/268 , H01L27/1214 , H01L29/66757 , H01L29/78603 , H01L29/78666 , H01L29/78675
摘要： A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The silicon based thin film transistor produced by the process includes a low temperature substrate incapable of withstanding sustained processing temperatures greater than about 250° C., an insulating layer on the substrate, a layer of silicon on the insulating layer having sections of doped silicon, undoped silicon, and poly-silicon, a gate dielectric layer on the layer of silicon, a layer of gate metal on the dielectric layer, a layer of oxide on sections of the layer of silicon and the layer of gate metal, and metal contacts on sections of the layer of silicon and layer of gate metal defining source, gate, and drain contacts, and interconnects.
摘要翻译： 用于在塑料基板上形成薄膜晶体管（TFT）的工艺代替标准薄膜晶体管制造技术，并且使用足够低的处理温度，以便可以使用便宜的塑料基板代替标准玻璃，石英和硅晶片基板 。 通过该方法制造的基于硅的薄膜晶体管包括不能承受大于约250℃的持续处理温度的低温衬底，衬底上的绝缘层，具有掺杂硅的部分的绝缘层上的硅层， 未掺杂的硅和多晶硅，硅层上的栅极介电层，电介质层上的栅极金属层，在硅层和栅极金属层上的部分上的氧化物层，以及金属接触 限定源极，栅极和漏极触点以及互连的硅层和栅极金属层的部分。
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公开(公告)号：US06340403B1
公开(公告)日：2002-01-22
申请号：US08538838
申请日：1995-10-04
IPC分类号： B32B3100
CPC分类号： B32B37/226 , B32B27/00 , B32B37/12 , B32B2307/552 , B32B2307/71 , B32B2307/714 , B32B2307/734 , B32B2327/12 , H01L31/048 , Y02E10/50
摘要： A solar cell module lamination process using fluoropolymers to provide protection from adverse environmental conditions and thus enable more extended use of solar cells, particularly in space applications. A laminate of fluoropolymer material provides a hermetically sealed solar cell module structure that is flexible and very durable. The laminate is virtually chemically inert, highly transmissive in the visible spectrum, dimensionally stable at temperatures up to about 200° C. highly abrasion resistant, and exhibits very little ultra-violet degradation.
摘要翻译： 使用含氟聚合物的太阳能电池模块层压方法来提供对不利环境条件的保护，从而能够更广泛地使用太阳能电池，特别是在空间应用中。 含氟聚合物材料的层压材料提供了一种柔性且非常耐用的密封太阳能电池模块结构。 层压板实际上是化学惰性的，在可见光谱中是高度透射的，在高达约200℃的温度下尺寸稳定，高度耐磨，并且显示非常少的紫外线降解。
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