公开(公告)号：US5653812A

公开(公告)日：1997-08-05

申请号：US534188

申请日：1995-09-26

申请人： Rudolph Hugo Petrmichl ,  Ray Hays Venable ,  Rickey Leonard Salter ,  Victor M. Zeeman, Jr.

发明人： Rudolph Hugo Petrmichl ,  Ray Hays Venable ,  Rickey Leonard Salter ,  Victor M. Zeeman, Jr.

IPC分类号： C23C16/02 ,  C23C16/26 ,  C23C16/505 ,  H01J37/32 ,  C23C16/00

CPC分类号： C23C16/042 ,  C23C16/0245 ,  C23C16/0272 ,  C23C16/26 ,  C23C16/509 ,  H01J37/32082 ,  H01J37/32706 ,  H01J2237/3327

摘要： The invention is a method and apparatus for the RF plasma deposition of diamond-like carbon (DLC) and related hard coatings onto the surface of drills; especially microdrills such as printed circuit board drills and printed wire board drills, using a mounting means connected to a source of capacitively coupled RF power. A key feature of the apparatus is that the drills to be coated are the only negatively biased surfaces in the capacitively-coupled system.According to the method, the surface of the drills to be coated are first chemically de-greased to remove contaminants, and inserted into the electronically masked coating fixture of the present invention. The electronically masked fixture includes the powered electrode, the portion of the drills to be coated, an electrically insulated spacer, and an electrically grounded shield plate. Next, the loaded fixture is placed into a plasma deposition vacuum chamber, and the air in said chamber is evacuated. Gas is added to the vacuum chamber, and a capacitive RF plasma is ignited, causing the surface of the drills to be sputter-etched to remove residual contaminants and surface oxides, and to activate the surface. Following the sputter-etching step, a silicon-containing material layer is deposited by capacitive RF plasma deposition. This silicon-containing material layer may be either an adhesion layer for subsequent deposition of DLC, or may be "Si-doped DLC" ("Si-DLC"). If this silicon-containing layer is an adhesion layer, the next step in the process is deposition of a top layer of either DLC or Si-DLC by capacitive RF plasma deposition.

摘要翻译： 本发明是用于将钻石样碳（DLC）和相关硬涂层的RF等离子体沉积到钻头表面上的方法和装置; 特别是诸如印刷电路板钻头和印刷线路板钻头的微钻头，使用连接到电容耦合RF功率源的安装装置。 该装置的关键特征是要被涂覆的钻头是电容耦合系统中唯一的负偏压表面。 根据该方法，首先将待涂覆的钻头的表面进行化学去油脂以除去污染物，并将其插入到本发明的电子掩模涂料固定装置中。 电子屏蔽固定装置包括动力电极，待涂覆的钻头部分，电绝缘垫片和电接地屏蔽板。 接下来，将装载的夹具放入等离子体沉积真空室中，并将所述室中的空气抽真空。 将气体添加到真空室中，并且点燃电容RF等离子体，使得钻头的表面被溅射蚀刻以除去残留的污染物和表面氧化物，并激活表面。 在溅射蚀刻步骤之后，通过电容RF等离子体沉积沉积含硅材料层。 该含硅材料层可以是用于随后沉积DLC的粘合层，或者可以是“Si掺杂DLC”（“Si-DLC”）。 如果该含硅层是粘附层，则该工艺的下一步骤是通过电容式RF等离子体沉积沉积DLC或Si-DLC的顶层。