公开(公告)号：US4775818A

公开(公告)日：1988-10-04

申请号：US851757

申请日：1986-04-14

申请人： William M. Clark, Jr. ,  Mark W. Utlaut ,  Robert G. Behrens ,  Eugene G. Szklarz ,  Edmund K. Storms ,  Robert P. Santandrea ,  Lynwood W. Swanson

发明人： William M. Clark, Jr. ,  Mark W. Utlaut ,  Robert G. Behrens ,  Eugene G. Szklarz ,  Edmund K. Storms ,  Robert P. Santandrea ,  Lynwood W. Swanson

IPC分类号： H01J27/26 ,  H01J37/08 ,  H01J27/02

CPC分类号： H01J27/26

摘要： A liquid metal ion source and alloy, wherein the species to be emitted from the ion source is contained in a congruently vaporizing alloy. In one embodiment, the liquid metal ion source acts as a source of arsenic, and in a source alloy the arsenic is combined with palladium, preferably in a liquid alloy having a range of compositions from about 24 to about 33 atomic percent arsenic. Such an alloy may be readily prepared by a combustion synthesis technique. Liquid metal ion sources thus prepared produce arsenic ions for implantation, have long lifetimes, and are highly stable in operation.

摘要翻译： 一种液体金属离子源和合金，其中从离子源发射的物质包含在一致的气化合金中。 在一个实施方案中，液体金属离子源用作砷源，并且在源合金中，砷与钯结合，优选在液体合金中，其组成范围为约24至约33原子％的砷。 这种合金可以通过燃烧合成技术容易地制备。 如此制备的液态金属离子源产生用于植入的砷离子，寿命长，操作高度稳定。

公开(公告)号：US4670685A

公开(公告)日：1987-06-02

申请号：US851755

申请日：1986-04-14

申请人： William M. Clark, Jr. ,  Mark W. Utlaut ,  Joseph A. Wysocki ,  Edmund K. Storms ,  Eugene G. Szklarz ,  Robert G. Behrens ,  Lynwood W. Swanson ,  Anthony E. Bell

发明人： William M. Clark, Jr. ,  Mark W. Utlaut ,  Joseph A. Wysocki ,  Edmund K. Storms ,  Eugene G. Szklarz ,  Robert G. Behrens ,  Lynwood W. Swanson ,  Anthony E. Bell

IPC分类号： H01J27/26 ,  H01J37/08 ,  H01J1/05

CPC分类号： H01J37/08 ,  H01J27/26

摘要： A liquid metal ion source and alloy for the simultaneous ion evaporation of arsenic and boron, arsenic and phosphorus, or arsenic, boron and phosphorus. The ionic species to be evaporated are contained in palladium-arsenic-boron and palladium-arsenic-boron-phosphorus alloys. The ion source, including an emitter means such as a needle emitter and a source means such as U-shaped heater element, is preferably constructed of rhenium and tungsten, both of which are readily fabricated. The ion sources emit continuous beams of ions having sufficiently high currents of the desired species to be useful in ion implantation of semiconductor wafers for preparing integrated circuit devices. The sources are stable in operation, experience little corrosion during operation, and have long operating lifetimes.

摘要翻译： 一种液态金属离子源和合金，用于同时离子蒸发砷和硼，砷和磷，或砷，硼和磷。 待蒸发的离子物质包含在钯 - 砷 - 硼和钯 - 砷 - 硼 - 磷合金中。 包括诸如针发射器和诸如U形加热器元件的源装置的发射器装置的离子源优选地由铼和钨构成，这两者都容易制造。 离子源发射具有足够大的所需物质电流的连续离子束，以用于制备集成电路器件的半导体晶片的离子注入。 来源运行稳定，运行时腐蚀小，使用寿命长。