公开(公告)号：US08693973B2

公开(公告)日：2014-04-08

申请号：US13462679

申请日：2012-05-02

Applicant: Goutam Chattopadhyay ,  Erich T. Schlecht ,  Choonsup Lee ,  Robert H. Lin ,  John J. Gill ,  Seth Sin ,  Imran Mehdi

Inventor： Goutam Chattopadhyay ,  Erich T. Schlecht ,  Choonsup Lee ,  Robert H. Lin ,  John J. Gill ,  Seth Sin ,  Imran Mehdi

IPC: H04B1/26

CPC classification number: H03D7/02 ,  H01L29/20 ,  H01L29/66212 ,  H01L29/872 ,  H03D9/0633

Abstract: A coplanar waveguide (CPW) based subharmonic mixer working at 670 GHz using GaAs Schottky diodes. One example of the mixer has a LO input, an RF input and an IF output. Another possible mixer has a LO input, and IF input and an RF output. Each input or output is connected to a coplanar waveguide with a matching network. A pair of antiparallel diodes provides a signal at twice the LO frequency, which is then mixed with a second signal to provide signals having sum and difference frequencies. The output signal of interest is received after passing through a bandpass filter tuned to the frequency range of interest.

Abstract translation: 基于共面波导（CPW）的次谐波混频器使用GaAs肖特基二极管在670 GHz工作。 混频器的一个例子有LO输入，RF输入和IF输出。 另一个可能的混频器具有LO输入，IF输入和RF输出。 每个输入或输出连接到具有匹配网络的共面波导。 一对反并联二极管提供两倍于LO频率的信号，然后与第二信号混合以提供具有和和差频率的信号。 感兴趣的输出信号在通过调谐到感兴趣的频率范围的带通滤波器之后被接收。

公开(公告)号：US20140147192A1

公开(公告)日：2014-05-29

申请号：US13871830

申请日：2013-04-26

Applicant: Cecile Jung-Kubiak ,  Theodore Reck ,  Bertrand Thomas ,  Robert H. Lin ,  Alejandro Peralta ,  John J. Gill ,  Choonsup Lee ,  Jose V. Siles ,  Risaku Toda ,  Goutam Chattopadhyay ,  Ken B. Cooper ,  Imran Mehdi

Inventor： Cecile Jung-Kubiak ,  Theodore Reck ,  Bertrand Thomas ,  Robert H. Lin ,  Alejandro Peralta ,  John J. Gill ,  Choonsup Lee ,  Jose V. Siles ,  Risaku Toda ,  Goutam Chattopadhyay ,  Ken B. Cooper ,  Imran Mehdi

IPC: F16B5/00

CPC classification number: F16B5/025 ,  F16B19/004 ,  H05K13/0015 ,  Y10T29/49778 ,  Y10T29/49895 ,  Y10T403/20

Abstract: A silicon alignment pin is used to align successive layers of components made in semiconductor chips and/or metallic components to make easier the assembly of devices having a layered structure. The pin is made as a compressible structure which can be squeezed to reduce its outer diameter, have one end fit into a corresponding alignment pocket or cavity defined in a layer of material to be assembled into a layered structure, and then allowed to expand to produce an interference fit with the cavity. The other end can then be inserted into a corresponding cavity defined in a surface of a second layer of material that mates with the first layer. The two layers are in registry when the pin is mated to both. Multiple layers can be assembled to create a multilayer structure. Examples of such devices are presented.

Abstract translation: 硅对准销用于对准在半导体芯片和/或金属部件中制造的部件的连续层，以使得具有层状结构的装置的组装更容易。 该销被制成可压缩的结构，其可以被挤压以减小其外径，将一端装配到限定在待组装成层状结构的材料层中的对应的对准袋或空腔中，然后允许膨胀以产生 与空腔的过盈配合。 然后可以将另一端插入限定在与第一层配合的第二材料层的表面中的相应的空腔中。 当引脚与两者配对时，两个层都在注册表中。 可以组装多层以创建多层结构。 呈现这种装置的示例。

公开(公告)号：US20140340178A1

公开(公告)日：2014-11-20

申请号：US14253541

申请日：2014-04-15

Applicant: Cecile Jung-Kubiak ,  Theodore Reck ,  Goutam Chattopadhyay ,  Jose Vicente Siles Perez ,  Robert H. Lin ,  Imran Mehdi ,  Choonsup Lee ,  Ken B. Cooper ,  Alejandro Peralta

Inventor： Cecile Jung-Kubiak ,  Theodore Reck ,  Goutam Chattopadhyay ,  Jose Vicente Siles Perez ,  Robert H. Lin ,  Imran Mehdi ,  Choonsup Lee ,  Ken B. Cooper ,  Alejandro Peralta

IPC: H01P3/16 ,  H01P11/00

CPC classification number: H01P3/16 ,  H01P11/002 ,  H01P11/006

Abstract: A multi-step silicon etching process has been developed to fabricate silicon-based terahertz (THz) waveguide components. This technique provides precise dimensional control across multiple etch depths with batch processing capabilities. Nonlinear and passive components such as mixers and multipliers waveguides, hybrids, OMTs and twists have been fabricated and integrated into a small silicon package. This fabrication technique enables a wafer-stacking architecture to provide ultra-compact multi-pixel receiver front-ends in the THz range.

Abstract translation: 已经开发了多步硅蚀刻工艺来制造基于硅的太赫兹（THz）波导部件。 该技术通过批处理功能提供跨多个蚀刻深度的精确尺寸控制。 已经制造了非线性和无源部件，例如混频器和乘法器波导，混合器，OMT和扭曲器并集成到小型硅封装中。 这种制造技术使得晶片堆叠架构能够在太赫兹范围内提供超紧凑的多像素接收机前端。

公开(公告)号：US20120280742A1

公开(公告)日：2012-11-08

申请号：US13462679

申请日：2012-05-02

Applicant: Goutam Chattopadhyay ,  Erich T. Schlecht ,  Choonsup Lee ,  Robert H. Lin ,  John J. Gill ,  Seth Sin ,  Imran Mehdi

Inventor： Goutam Chattopadhyay ,  Erich T. Schlecht ,  Choonsup Lee ,  Robert H. Lin ,  John J. Gill ,  Seth Sin ,  Imran Mehdi

IPC: G06G7/12 ,  H01L21/329

CPC classification number: H03D7/02 ,  H01L29/20 ,  H01L29/66212 ,  H01L29/872 ,  H03D9/0633

Abstract: A coplanar waveguide (CPW) based subharmonic mixer working at 670 GHz using GaAs Schottky diodes. One example of the mixer has a LO input, an RF input and an IF output. Another possible mixer has a LO input, and IF input and an RF output. Each input or output is connected to a coplanar waveguide with a matching network. A pair of antiparallel diodes provides a signal at twice the LO frequency, which is then mixed with a second signal to provide signals having sum and difference frequencies. The output signal of interest is received after passing through a bandpass filter tuned to the frequency range of interest.

Abstract translation: 基于共面波导（CPW）的次谐波混频器使用GaAs肖特基二极管在670 GHz工作。 混频器的一个例子有LO输入，RF输入和IF输出。 另一个可能的混频器具有LO输入，IF输入和RF输出。 每个输入或输出连接到具有匹配网络的共面波导。 一对反并联二极管提供两倍于LO频率的信号，然后与第二信号混合以提供具有和和差频率的信号。 感兴趣的输出信号在通过调谐到感兴趣的频率范围的带通滤波器之后被接收。