Method and apparatus for lifting off photoresist beneath an overlayer
    1.
    发明授权
    Method and apparatus for lifting off photoresist beneath an overlayer 有权
    用于剥离覆盖层下面的光致抗蚀剂的方法和装置

    公开(公告)号:US08163185B1

    公开(公告)日:2012-04-24

    申请号:US12059903

    申请日:2008-03-31

    IPC分类号: B44C1/22

    CPC分类号: G11B5/3163 Y10T29/49032

    摘要: A method of lifting off photoresist beneath an overlayer includes providing a structure including photoresist and depositing an overlayer impenetrable to a liftoff solution over the photoresist and a field region around the structure. The method also includes forming a mask over the structure and ion milling to remove the overlayer in the field region not covered by the mask. The method then includes lifting off the photoresist using the liftoff solution.

    摘要翻译: 提供覆盖层下面的光致抗蚀剂的方法包括提供包括光致抗蚀剂的结构,以及沉积在光致抗蚀剂上的不透气的覆盖层和围绕结构的场区域的覆盖层。 该方法还包括在结构上形成掩模和离子研磨以去除未被掩模覆盖的场区域中的覆盖层。 该方法然后包括使用提升溶液提取光致抗蚀剂。

    Method and system for providing a magnetoresistive structure using undercut free mask
    2.
    发明授权
    Method and system for providing a magnetoresistive structure using undercut free mask 有权
    使用无切削掩模提供磁阻结构的方法和系统

    公开(公告)号:US08349195B1

    公开(公告)日:2013-01-08

    申请号:US12163865

    申请日:2008-06-27

    IPC分类号: B44C1/22 G11B5/127

    摘要: A method and system provide a magnetoresistive structure from a magnetoresistive stack that includes a plurality of layers. The method and system include providing a mask that exposes a portion of the magnetoresistive stack. The mask has at least one side, a top, and a base at least as wide as the top. The method and system also include removing the portion of the magnetoresistive stack to define the magnetoresistive structure. The method and system further include providing an insulating layer. A portion of the insulating layer resides on the at least one side of the mask. The method and system further include removing the portion of the insulating layer on the at least one side of the mask and removing the mask.

    摘要翻译: 一种方法和系统从包括多个层的磁阻堆叠提供磁阻结构。 该方法和系统包括提供暴露磁阻堆叠的一部分的掩模。 掩模至少具有一个侧面,顶部和至少与顶部一样宽的基部。 该方法和系统还包括去除磁阻堆叠的部分以限定磁阻结构。 所述方法和系统还包括提供绝缘层。 绝缘层的一部分位于掩模的至少一侧。 所述方法和系统还包括去除掩模的至少一侧的绝缘层的部分并去除掩模。