公开(公告)号：US08349195B1

公开(公告)日：2013-01-08

申请号：US12163865

申请日：2008-06-27

申请人： Weimin Si ,  Liubo Hong ,  Honglin Zhu ,  Winnie Yu ,  Rowena Schmidt

发明人： Weimin Si ,  Liubo Hong ,  Honglin Zhu ,  Winnie Yu ,  Rowena Schmidt

IPC分类号： B44C1/22 ,  G11B5/127

CPC分类号： G11B5/3912 ,  B82Y10/00 ,  G11B5/3163 ,  G11B5/398 ,  G11B2005/3996 ,  Y10T29/49043 ,  Y10T29/49046 ,  Y10T29/49052

摘要： A method and system provide a magnetoresistive structure from a magnetoresistive stack that includes a plurality of layers. The method and system include providing a mask that exposes a portion of the magnetoresistive stack. The mask has at least one side, a top, and a base at least as wide as the top. The method and system also include removing the portion of the magnetoresistive stack to define the magnetoresistive structure. The method and system further include providing an insulating layer. A portion of the insulating layer resides on the at least one side of the mask. The method and system further include removing the portion of the insulating layer on the at least one side of the mask and removing the mask.

摘要翻译： 一种方法和系统从包括多个层的磁阻堆叠提供磁阻结构。 该方法和系统包括提供暴露磁阻堆叠的一部分的掩模。 掩模至少具有一个侧面，顶部和至少与顶部一样宽的基部。 该方法和系统还包括去除磁阻堆叠的部分以限定磁阻结构。 所述方法和系统还包括提供绝缘层。 绝缘层的一部分位于掩模的至少一侧。 所述方法和系统还包括去除掩模的至少一侧的绝缘层的部分并去除掩模。

公开(公告)号：US08163185B1

公开(公告)日：2012-04-24

申请号：US12059903

申请日：2008-03-31

申请人： Hai Sun ,  Liubo Hong ,  Rowena Schmidt ,  Lijie Zhao ,  Winnie Yu ,  Hongping Yuan

发明人： Hai Sun ,  Liubo Hong ,  Rowena Schmidt ,  Lijie Zhao ,  Winnie Yu ,  Hongping Yuan

IPC分类号： B44C1/22

CPC分类号： G11B5/3163 ,  Y10T29/49032

摘要： A method of lifting off photoresist beneath an overlayer includes providing a structure including photoresist and depositing an overlayer impenetrable to a liftoff solution over the photoresist and a field region around the structure. The method also includes forming a mask over the structure and ion milling to remove the overlayer in the field region not covered by the mask. The method then includes lifting off the photoresist using the liftoff solution.

摘要翻译： 提供覆盖层下面的光致抗蚀剂的方法包括提供包括光致抗蚀剂的结构，以及沉积在光致抗蚀剂上的不透气的覆盖层和围绕结构的场区域的覆盖层。 该方法还包括在结构上形成掩模和离子研磨以去除未被掩模覆盖的场区域中的覆盖层。 该方法然后包括使用提升溶液提取光致抗蚀剂。

公开(公告)号：US08797680B1

公开(公告)日：2014-08-05

申请号：US13417930

申请日：2012-03-12

申请人： Guanghong Luo ,  Liubo Hong ,  Honglin Zhu ,  Yun-Fei Li ,  Yingjian Chen

发明人： Guanghong Luo ,  Liubo Hong ,  Honglin Zhu ,  Yun-Fei Li ,  Yingjian Chen

IPC分类号： G11B5/127

CPC分类号： G11B5/3116 ,  G11B5/1278 ,  G11B5/3163 ,  Y10T29/49039 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： A perpendicular magnetic recording (PMR) transducer is provided. The PRM transducer includes a PMR pole having a top, a bottom, and at least one sidewall, the bottom having a bottom width, the top having a top width bigger than the bottom width. The PRM transducer further includes an intermediate layer adjacent to the at least one sidewall, a write gap on the PMR pole, the write gap including a first layer on the PMR pole, the first layer including a planarization stop layer, and a shield on the write gap.

摘要翻译： 提供垂直磁记录（PMR）传感器。 PRM传感器包括具有顶部，底部和至少一个侧壁的PMR极，底部具有底部宽度，顶部具有大于底部宽度的顶部宽度。 PRM换能器还包括与至少一个侧壁相邻的中间层，PMR极上的写入间隙，写入间隙包括PMR极上的第一层，第一层包括平坦化停止层，以及屏蔽 写差距。

公开(公告)号：US08547660B2

公开(公告)日：2013-10-01

申请号：US12641251

申请日：2009-12-17

申请人： Donald G. Allen ,  Amanda Baer ,  Yingjian Chen ,  Andrew Chiu ,  Liubo Hong ,  Wen-Chien D. Hsiao ,  Edward H. P. Lee ,  Fenglin Liu ,  Aron Pentek ,  Katalin Pentek ,  Kyusik Shin ,  Yi Zheng ,  Qiping Zhong ,  Honglin Zhu

发明人： Donald G. Allen ,  Amanda Baer ,  Yingjian Chen ,  Andrew Chiu ,  Liubo Hong ,  Wen-Chien D. Hsiao ,  Edward H. P. Lee ,  Fenglin Liu ,  Aron Pentek ,  Katalin Pentek ,  Kyusik Shin ,  Yi Zheng ,  Qiping Zhong ,  Honglin Zhu

IPC分类号： G11B5/127

CPC分类号： G11B5/3163 ,  G11B5/112 ,  G11B5/1278 ,  G11B5/3116 ,  G11B5/314 ,  G11B5/3143 ,  G11B5/3146 ,  G11B5/315 ,  Y10T428/11 ,  Y10T428/1171

摘要： A magnetic write head having a tapered trailing edge and having a magnetic layer formed over a trailing edge of the write pole at a location recessed from the ABS, the magnetic layer being separated from the trailing edge of the write pole by a thin non-magnetic layer. The thin non-magnetic layer is preferably sufficiently thin that the magnetic layer can function as a portion of the write pole in a region removed from the ABS. A trailing magnetic shield is formed over the write pole and is separated from the write pole by a non-magnetic trailing gap layer. A non-magnetic spacer layer can be formed over the magnetic layer to provide additional separation between the magnetic layer and the trailing magnetic shield.

摘要翻译： 一种具有锥形后缘并具有磁性层的磁性写头，该磁性层形成在从ABS的凹陷处的写入极的后缘上，该磁性层通过薄的非磁性的方式与写入极的后缘分离 层。 薄的非磁性层优选地足够薄，使得磁性层可以在从ABS去除的区域中用作写入极的一部分。 尾磁屏蔽形成在写极上，并且通过非磁性拖尾间隙层与写极分离。 可以在磁性层之上形成非磁性间隔层，以在磁性层和尾部磁屏蔽之间提供额外的间隔。

公开(公告)号：US20120127616A1

公开(公告)日：2012-05-24

申请号：US12954508

申请日：2010-11-24

申请人： HONGLIN ZHU ,  Liubo Hong ,  Hicham M. Sougrati ,  Quang Le ,  Jui-Lung Li ,  Chando Park

发明人： HONGLIN ZHU ,  Liubo Hong ,  Hicham M. Sougrati ,  Quang Le ,  Jui-Lung Li ,  Chando Park

IPC分类号： G11B5/33 ,  B44C1/22 ,  B05D5/12

CPC分类号： G11B5/3163 ,  G01R33/098 ,  G11B5/3909 ,  G11B5/3929 ,  G11B5/3932

摘要： Embodiments herein generally relate to TMR readers and methods for their manufacture. The embodiments discussed herein disclose TMR readers that utilize a structure that avoids use of the DLC layer over the sensor structure and over the hard bias layer. The capping structure over the sensor structure functions as both a protective layer for the sensor structure and a CMP stop layer. The hard bias capping structure functions as both a protective structure for the hard bias layer and as a CMP stop layer. The capping structures that are free of DLC reduce the formation of notches in the second shield layer so that second shield layer is substantially flat.

摘要翻译： 本文的实施方案通常涉及TMR读取器及其制造方法。 本文讨论的实施例公开了使用避免在传感器结构上以及硬偏压层上使用DLC层的结构的TMR读取器。 传感器结构上的封盖结构用作传感器结构的保护层和CMP停止层。 硬偏置封盖结构既用作硬偏置层的保护结构又用作CMP停止层。 没有DLC的封盖结构减少了第二屏蔽层中的凹口的形成，使得第二屏蔽层基本上是平的。

公开(公告)号：US20120125886A1

公开(公告)日：2012-05-24

申请号：US12954485

申请日：2010-11-24

申请人： Liubo Hong ,  Fenglin Liu ,  Qiping Zhong ,  Honglin Zhu

发明人： Liubo Hong ,  Fenglin Liu ,  Qiping Zhong ,  Honglin Zhu

IPC分类号： G01R1/16

CPC分类号： G11B5/315 ,  G11B5/1278 ,  G11B5/3116 ,  G11B5/3146 ,  G11B5/3163

摘要： Methods for fabrication of leading edge shields and tapered magnetic poles with a tapered leading edge are provided. The leading edge shield may be formed by utilizing a CMP stop layer. The CMP stop layer may aid in preventing over polishing of the magnetic material. For the tapered magnetic poles with a tapered leading edge, a magnetic material is deposited on a planarized surface, a patterned resist material is formed, and exposed magnetic material is etched to form at least one tapered surface of the magnetic material.

摘要翻译： 提供了具有锥形前缘的前缘屏蔽和锥形磁极的制造方法。 前缘屏蔽可以通过利用CMP停止层形成。 CMP停止层可以有助于防止磁性材料的过度抛光。 对于具有锥形前缘的锥形磁极，将磁性材料沉积在平坦化表面上，形成图案化的抗蚀剂材料，并且暴露的磁性材料被蚀刻以形成磁性材料的至少一个锥形表面。

公开(公告)号：US20090244789A1

公开(公告)日：2009-10-01

申请号：US12060724

申请日：2008-04-01

申请人： Liubo Hong ,  Honglin Zhu

发明人： Liubo Hong ,  Honglin Zhu

IPC分类号： G11B5/33

CPC分类号： H01L43/12 ,  H01L43/08

摘要： The method and system for providing a magnetoresistive device are disclosed. The magnetoresistive device is formed from a plurality of magnetoresistive layer. The method and system include providing a mask. The mask covers a first portion of the magnetoresistive element layers in at least one device area. The magnetoresistive element(s) are defined using the mask. The method and system include depositing hard bias layer(s). The method and system also include providing a hard bias capping structure on the hard bias layer(s). The hard bias capping structure includes a first protective layer and a planarization stop layer. The first protective layer resides between the planarization stop layer and the hard bias layer(s). The method and system also include performing a planarization. The planarization stop layer is configured for the planarization.

摘要翻译： 公开了一种提供磁阻器件的方法和系统。 磁阻器件由多个磁阻层形成。 该方法和系统包括提供掩模。 掩模在至少一个器件区域中覆盖磁阻元件层的第一部分。 使用掩模限定磁阻元件。 该方法和系统包括沉积硬偏压层。 该方法和系统还包括在硬偏压层上提供硬偏压盖结构。 硬偏压盖结构包括第一保护层和平坦化停止层。 第一保护层位于平坦化停止层和硬偏压层之间。 该方法和系统还包括执行平面化。 平坦化停止层被配置为用于平坦化。

公开(公告)号：US08316527B2

公开(公告)日：2012-11-27

申请号：US12060724

申请日：2008-04-01

申请人： Liubo Hong ,  Honglin Zhu

发明人： Liubo Hong ,  Honglin Zhu

IPC分类号： G11B5/127 ,  H04R31/00

CPC分类号： H01L43/12 ,  H01L43/08

摘要： The method provides a magnetoresistive device. The magnetoresistive device is formed from a plurality of magnetoresistive layers. The method includes providing a mask. The mask covers a first portion of the magnetoresistive element layers in at least one device area. The magnetoresistive element(s) are defined using the mask. The method includes depositing hard bias layer(s). The method also includes providing a hard bias capping structure on the hard bias layer(s). The hard bias capping structure includes a first protective layer and a planarization stop layer. The first protective layer resides between the planarization stop layer and the hard bias layer(s). The method also includes performing a planarization. The planarization stop layer is configured for the planarization.

摘要翻译： 该方法提供了一种磁阻器件。 磁阻器件由多个磁阻层形成。 该方法包括提供掩模。 掩模在至少一个器件区域中覆盖磁阻元件层的第一部分。 使用掩模限定磁阻元件。 该方法包括沉积硬偏压层。 该方法还包括在硬偏压层上提供硬偏压盖结构。 硬偏压盖结构包括第一保护层和平坦化停止层。 第一保护层位于平坦化停止层和硬偏压层之间。 该方法还包括执行平面化。 平坦化停止层被配置为用于平坦化。

公开(公告)号：US08146236B1

公开(公告)日：2012-04-03

申请号：US12057692

申请日：2008-03-28

申请人： Guanghong Luo ,  Liubo Hong ,  Honglin Zhu ,  Yun-Fei Li ,  Yingjian Chen

发明人： Guanghong Luo ,  Liubo Hong ,  Honglin Zhu ,  Yun-Fei Li ,  Yingjian Chen

IPC分类号： G11B5/127 ,  H04R31/00

CPC分类号： G11B5/3116 ,  G11B5/1278 ,  G11B5/3163 ,  Y10T29/49039 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： A method and system for providing a perpendicular magnetic recording (PMR) transducer from pole layer(s) are disclosed. First and second planarization stop layers are provided on the pole layer(s). A mask is provided on the second planarization stop layer. A first portion of the mask resides on a portion of the pole layer(s) used to form the PMR pole. The PMR pole is defined after the mask is provided. An intermediate layer surrounding at least the PMR pole is provided. A first planarization is performed on at least the intermediate layer. A portion of the second planarization stop layer is removed during the first planarization. A remaining portion of the second planarization stop layer is removed. A second planarization is performed. A portion of the first planarization stop layer remains after the second planarization. A write gap and shield are provided on the PMR pole and write gap, respectively.

摘要翻译： 公开了一种用于从极层提供垂直磁记录（PMR）换能器的方法和系统。 第一和第二平坦化停止层设置在极层上。 在第二平坦化停止层上设置掩模。 掩模的第一部分位于用于形成PMR极的极层的一部分上。 在提供面罩之后定义PMR极。 提供至少围绕PMR极的中间层。 至少在中间层上执行第一平面化。 在第一平坦化期间，去除第二平坦化停止层的一部分。 去除第二平坦化停止层的剩余部分。 执行第二平面化。 在第二平面化之后，第一平坦化停止层的一部分保留。 分别在PMR极和写间隙上提供写间隙和屏蔽。

公开(公告)号：US20120050915A1

公开(公告)日：2012-03-01

申请号：US12874116

申请日：2010-09-01

申请人： Liubo Hong ,  Aron Pentek ,  Yi Zheng ,  Honglin Zhu

发明人： Liubo Hong ,  Aron Pentek ,  Yi Zheng ,  Honglin Zhu

IPC分类号： G11B5/10 ,  B44C1/22

CPC分类号： G11B5/3163 ,  G11B5/1278 ,  G11B5/23 ,  G11B5/3116 ,  G11B5/315 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： A method for manufacturing a magnetic write head having a tapered write pole as well as a leading edge taper, and independent trailing and side magnetic shields. The method allows the write pole to be constructed by a dry process wherein the write pole material is either deposited by a process such as sputter deposition or electrically plated and the write pole shape is defined by masking and ion milling. The write pole has a stepped feature that can either be used to provide increased magnetic spacing between the trailing shield and the write pole at a location slightly recessed from the ABS or can be magnetic material that increases the effective thickness of the write pole at a location slightly recessed from the ABS. A bump structure can be further built over that stepped feature to enhance field gradient as well as reduce trailing shield saturation. Because the trailing and side shields are formed independently, they can be made of different materials and with different throat heights.

摘要翻译： 一种用于制造具有锥形写柱以及前缘锥形的磁写头的方法，以及独立的后侧和侧面磁屏蔽。 该方法允许通过干法处理写入极，其中写极材料通过诸如溅射沉积或电镀的工艺沉积，并且写极形状通过掩模和离子铣削来定义。 写极具有阶梯特征，其可以用于在稍微从ABS处凹陷的位置处在后屏蔽和写极之间提供增加的磁间隔，或者可以是磁性材料，其增加写极的位置处的有效厚度 从ABS略微凹进。 可以在该阶梯特征上进一步构建凸块结构，以增强磁场梯度以及减少后屏蔽饱和度。 因为尾部和侧面的屏蔽是独立形成的，所以它们可以由不同的材料制成，具有不同的喉部高度。