公开(公告)号：US07550854B2

公开(公告)日：2009-06-23

申请号：US10514145

申请日：2003-03-19

Applicant: Rudolf Strasser

Inventor： Rudolf Strasser

IPC: H01L23/48 ,  H01L23/52

CPC classification number: H01L23/528 ,  H01L23/5227 ,  H01L23/66 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

Abstract: An explanation is given of an integrated interconnect arrangement having a plurality of interconnects that cross over one another at two crossover sections. By virtue of this measure, it is possible to achieve a uniform current flow in all three interconnects even at very high frequencies.

Abstract translation: 给出了具有在两个交叉部分彼此交叉的多个互连的集成互连装置的说明。 凭借这一措施，即使在非常高的频率下也可以在所有三个互连中实现均匀的电流。

公开(公告)号：US20060202338A1

公开(公告)日：2006-09-14

申请号：US10514145

申请日：2003-03-19

Applicant: Rudolf Strasser

Inventor： Rudolf Strasser

IPC: H01L23/52

CPC classification number: H01L23/528 ,  H01L23/5227 ,  H01L23/66 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01L2924/00

Abstract: Integrated interconnect arrangement An explanation is given of an integrated interconnect arrangement (12) having a plurality of interconnects (LB1 to LB3) that cross over one another at two crossover sections (20, 24). By virtue of this measure, it is possible to achieve a uniform current flow in all three interconnects even at very high frequencies.

Abstract translation: 集成互连装置给出了具有在两个交叉部分（20,24）上彼此交叉的多个互连（LB 1至LB 3）的集成互连装置（12）的说明。 凭借这一措施，即使在非常高的频率下也可以在所有三个互连中实现均匀的电流。

公开(公告)号：US4788357A

公开(公告)日：1988-11-29

申请号：US074137

申请日：1987-07-16

Applicant: Gerhard Dummer ,  Klaus Haselwarter ,  Hermann Klaus ,  Ludwig Schmidhammer ,  Rudolf Strasser

Inventor： Gerhard Dummer ,  Klaus Haselwarter ,  Hermann Klaus ,  Ludwig Schmidhammer ,  Rudolf Strasser

IPC: C07C17/00 ,  C07C17/25 ,  C07C17/383 ,  C07C21/06 ,  C07C67/00

CPC classification number: C07C17/25 ,  C07C17/383

Abstract: An improved method of producing vinyl chloride by pyrolysis of purified 1,2-dichloroethane at temperatures from 480.degree. C. to 540.degree. C. at a pressure of 10 to 36 bar absolute with partial utilization of the heat content of the flue gases from the pyrolysis furnace firing to preheat liquid 1,2-dichloroethane almost to its boiling temperature utilizing the flue gas waste heat to generate steam, cool the pyrolysis gas mixture in several stages and separate the hydrogen chloride from the pyrolysis gas mix in a hydrogen chloride column as well as separate vinyl chloride from the pyrolysis gas mix in a vinyl chloride monomer column.

Abstract translation: 一种改进的制备氯乙烯的方法，其通过在绝对压力为10至36巴的压力下，在480℃至540℃的温度下热解纯化的1,2-二氯乙烷，部分利用来自 利用废气废热，利用烟气废热预热液体1,2-二氯乙烷几乎达到沸点，分几个阶段冷却热解气体混合物，将氯化氢与热解气体混合物在氯化氢柱中分离， 以及来自氯乙烯单体柱中的热解气体混合物的单独的氯乙烯。

公开(公告)号：US4746759A

公开(公告)日：1988-05-24

申请号：US923327

申请日：1986-10-27

Applicant: Gerhard Dummer ,  Klaus Haselwarter ,  Hermann Klaus ,  Ludwig Schmidhammer ,  Rudolf Strasser

Inventor： Gerhard Dummer ,  Klaus Haselwarter ,  Hermann Klaus ,  Ludwig Schmidhammer ,  Rudolf Strasser

IPC: C07C17/00 ,  C07C17/25 ,  C07C21/06 ,  C07C67/00 ,  C07C17/24 ,  C07C17/34

CPC classification number: C07C17/25 ,  B01J2219/00006

Abstract: An improved process for the preparation of vinyl chloride from 1,2-dichloroethane (EDC) wherein 0.10 to 0.15 % by weight of carbon tetrachloride based on EDC, is used as a cracking promoter and the CHCl.sub.3 content is limited to less than 200 ppm. Before being fed to the cracking zone, the EDC is brought almost to the boiling point at 15 to 31 bar and then expanded to 10 to 16 bar with flashing EDC vapors and the fraction which has remained liquid is vaporized externally, and the combined EDC gas streams are heated, after being fed into the cracking furnaces, so that the energy required for cracking is already supplied in the first 75 to 85% of the reaction zone, whereby a conversion of 60 to 70% is obtained at residence time from 10 to 25 seconds and the exit temperature from the reaction zone is 485.degree. to 510.degree. C.

Abstract translation: 用于从1,2-二氯乙烷（EDC）制备氯乙烯的改进方法，其中基于EDC的0.10至0.15重量％的四氯化碳用作裂化促进剂，CHCl 3含量限于小于200ppm。 在进料到裂化区之前，EDC几乎达到15至31巴的沸点，然后用闪烁的EDC蒸气膨胀至10至16巴，剩余液体的馏分从外部蒸发，并将组合的EDC气体 在进料到裂解炉中之后，将物流加热，使得裂化所需的能量已经在反应区的第一个75-85％的比例中提供，从而在10至10的停留时间内获得60至70％的转化率 25秒，反应区出口温度为485〜510℃。

公开(公告)号：US4839153A

公开(公告)日：1989-06-13

申请号：US151817

申请日：1988-02-03

Applicant: Ludwig Schmidhammer ,  Gerhard Dummer ,  Peter Hirschmann ,  Rudolf Strasser ,  Franz Haunberger

Inventor： Ludwig Schmidhammer ,  Gerhard Dummer ,  Peter Hirschmann ,  Rudolf Strasser ,  Franz Haunberger

IPC: C07C17/25 ,  B01J23/00 ,  B01J23/44 ,  C01B7/07 ,  C01B33/107 ,  C07B61/00 ,  C07C17/00 ,  C07C17/395 ,  C07C21/06 ,  C07C67/00

CPC classification number: C01B7/0712 ,  B01J23/44 ,  C01B33/10763 ,  C01B7/0706

Abstract: In a process for the purification of hydrogen chloride from the pyrolysis of 1,2-dichloroethane, optionally after a preceding step of acetylene removal by selective hydrogenation under specific conditions followed by rectification of the resulting mixture to obtain hydrogen chloride containing at most 5 ppm of unsaturated hydrocarbons and at most 5 ppm of chlorinated hydrocarbons.

Abstract translation: 在从1,2-二氯乙烷的热解中纯化氯化氢的方法中，任选地在通过在特定条件下通过选择性氢化除去乙炔之前的步骤，然后将所得混合物精馏，得到含有至多5ppm 不饱和烃和至多5ppm的氯代烃。

公开(公告)号：US4482770A

公开(公告)日：1984-11-13

申请号：US241281

申请日：1981-03-06

Applicant: Ludwig Schmidhammer ,  Rudolf Strasser

Inventor： Ludwig Schmidhammer ,  Rudolf Strasser

IPC: C01B7/07 ,  C07C17/38

CPC classification number: C07C17/38 ,  C01B7/0706

Abstract: An improved process for the removal of acetylene from a hydrogen chloride stream in which the acetylene is converted to vinyl chloride by contact with a hydrochlorination catalyst, the improvement comprising, prior to contacting the stream with the hydrochlorination catalyst, contacting said stream with a catalyst comprising a noble metal, preferably of the platinum group, or salt or oxide thereof, supported or unsupported, at a temperature of between about 50.degree. and about 200.degree. C. and a pressure between about 8 and about 20 bar absolute.

Abstract translation: 一种用于从氯化氢料流中除去乙炔的改进方法，其中通过与氢氯化催化剂接触将乙炔转化为氯乙烯，其改进包括在将料流与氢氯化催化剂接触之前，使所述料流与催化剂接触，所述催化剂包含 优选铂族的贵金属或其盐或氧化物，在约50至约200℃的温度和约8至约20巴绝对压力之间的负载或未负载。

公开(公告)号：US4072580A

公开(公告)日：1978-02-07

申请号：US652009

申请日：1976-01-26

Applicant: Helmut Spork ,  Rudolf Strasser ,  Johann Waas

Inventor： Helmut Spork ,  Rudolf Strasser ,  Johann Waas

IPC: B01D3/00 ,  B01D3/34 ,  C08J11/02 ,  B01D3/40

CPC classification number: B01D3/34 ,  C08J11/02

Abstract: A water-miscible organic solvent is recovered from a mixture containing the solvent and water by adding an inert compound which is immiscible with the water and has a vapor pressure of no more than 5 mm Hg (abs.) at 100.degree. C. to the mixture and thereafter distilling off the organic solvent.

Abstract translation: 通过加入与水不混溶的惰性化合物，在100℃下蒸气压不大于5mmHg（绝对），从含有溶剂和水的混合物中回收水混溶性有机溶剂至 混合物，然后蒸去有机溶剂。

公开(公告)号：US07250650B2

公开(公告)日：2007-07-31

申请号：US11133086

申请日：2005-05-19

Applicant: Matthias Hierlemann ,  Rudolf Strasser

Inventor： Matthias Hierlemann ,  Rudolf Strasser

IPC: H01L27/108 ,  H01L29/76 ,  H01L29/94 ,  H01L31/119

CPC classification number: H01L27/10891 ,  H01L27/0214 ,  H01L27/108 ,  H01L27/10861 ,  H01L27/10873

Abstract: A field-effect transistor (FET) structure and method of formation thereof is presented. The FET structure includes first and second source/drain regions formed in a semiconductor substrate to define a channel region. A gate insulation layer is formed at a surface of the channel region. A control layer is formed at a surface of the gate insulation layer. A diode doping region is formed to realize a diode in the semiconductor substrate. An electrically conductive diode connection layer connects the diode doping region to the control layer. A depression is formed in the semiconductor substrate. The diode doping region is formed at a bottom of the depression and the diode connection layer is formed in the depression to dissipate excess charge carriers in the semiconductor substrate.

Abstract translation: 提出了场效应晶体管（FET）结构及其形成方法。 FET结构包括形成在半导体衬底中以限定沟道区的第一和第二源/漏区。 栅极绝缘层形成在沟道区的表面。 控制层形成在栅绝缘层的表面。 形成二极管掺杂区以在半导体衬底中实现二极管。 导电二极管连接层将二极管掺杂区域连接到控制层。 在半导体衬底中形成凹陷。 二极管掺杂区形成在凹陷的底部，二极管连接层形成在凹陷中以消散半导体衬底中的过量电荷载流子。

公开(公告)号：US06967133B2

公开(公告)日：2005-11-22

申请号：US10696159

申请日：2003-10-29

Applicant: Jürgen Amon ,  Jürgen Faul ,  Ulrike Gruening ,  Frank Jakubowski ,  Thomas Schuster ,  Rudolf Strasser

Inventor： Jürgen Amon ,  Jürgen Faul ,  Ulrike Gruening ,  Frank Jakubowski ,  Thomas Schuster ,  Rudolf Strasser

IPC: H01L21/265 ,  H01L21/285 ,  H01L21/336 ,  H01L21/8238 ,  H01L21/8242

CPC classification number: H01L27/10888 ,  H01L21/26586 ,  H01L21/28512 ,  H01L29/66659

Abstract: The present invention provides a method for fabricating a semiconductor structure having a plurality of gate stacks (GS1, GS2, GS3, GS4) on a semiconductor substrate (10), having the following steps: application of the gate stacks (GS1, GS2, GS3, GS4) to a gate dielectric (11) above the semiconductor substrate (10); formation of a sidewall oxide (17) on sidewalls of the gate stacks (GS1, GS2, GS3, GS4); application and patterning of a mask (12) on the semiconductor structure; and implantation of a contact doping (13) in a self-aligned manner with respect to the sidewall oxide (17) of the gate stacks (GS1, GS2) in regions not covered by the mask (12).

Abstract translation: 本发明提供了一种在半导体衬底（10）上制造具有多个栅极堆叠（GS 1，GS 2，GS 3，GS 4）的半导体结构的方法，具有以下步骤：施加栅极堆叠（GS 1，GS 2，GS 3，GS 4）连接到半导体衬底（10）上方的栅极电介质（11）; 在栅堆叠（GS 1，GS 2，GS 3，GS 4）的侧壁上形成侧壁氧化物（17）; 半导体结构上的掩模（12）的应用和图案化; 以及在未被掩模（12）覆盖的区域中相对于栅极堆叠（GS1，GS2）的侧壁氧化物（17）以自对准的方式注入接触掺杂（13）。

公开(公告)号：US4822932A

公开(公告)日：1989-04-18

申请号：US178477

申请日：1988-04-07

Applicant: Gerhard Dummer ,  Klaus Haselwarter ,  Hermann Klaus ,  Ludwig Schmidhammer ,  Rudolf Strasser

Inventor： Gerhard Dummer ,  Klaus Haselwarter ,  Hermann Klaus ,  Ludwig Schmidhammer ,  Rudolf Strasser

IPC: C07C17/00 ,  C07C17/25 ,  C07C17/38 ,  C07C17/383 ,  C07C21/06 ,  C07C67/00 ,  C07C17/24 ,  C07C17/34

CPC classification number: C07C17/25 ,  C07C17/38 ,  B01J2219/00006 ,  Y02P20/51

Abstract: In a method of treating the reaction product of pyrolysis of 1,2-dichloroethane to form vinyl chloride and hydrogen chloride with multiple stage cooling and distillation separation of the reaction product and recycle of unreacted 1,2-dichloroethane to the pyrolysis step, the improvement comprising direct cooling of the reaction product immediately after leaving the pyrolysis step, within 1 sec from a temperature range of 480.degree. to 540.degree. C. down to 150.degree. to 250.degree. C., charging the cooled product into a quench column, recovering the vapors from the head of the quench column and indirectly cooling the same by heat exchange to at least its condensation point, the heat exchange media being at least one member of the group consisting of (a) 1,2-dichloroethane to be fed in heated condition to the pyrolysis unit, (b) air used as combustion air to fire the pyrolysis zone, (c) the sump of the hydrogen chloride column as defined above, (d) liquid hydrogene chloride to be evaporated and, (e) water, to dissipate heat not used within the measures according to the present invention.

Abstract translation: 在处理1,2-二氯乙烷热解反应产物形成氯乙烯和氯化氢的方法中，多级冷却和蒸馏分离反应产物并将未反应的1,2-二氯乙烷再循环到热解步骤中，改进 包括在离开热解步骤后立即直接冷却反应产物，在480℃至540℃的温度至150℃至250℃的1秒内，将冷却的产物装入骤冷塔中，回收 来自骤冷塔头部的蒸气并通过热交换间接地冷却至至少其冷凝点，所述热交换介质是由（a）1,2-二氯乙烷组成的组中的至少一个组分，所述组分由待加热的 （b）用作燃烧空气来燃烧热解区的空气，（c）如上所述的氯化氢柱的贮槽，（d）待蒸发的液体氯化烯，（e） 水，以消散根据本发明的措施中不使用的热量。