Resist pattern calculation method and calculation program storage medium
    2.
    发明授权
    Resist pattern calculation method and calculation program storage medium 有权
    抗蚀图案计算方法和计算程序存储介质

    公开(公告)号:US09448495B2

    公开(公告)日:2016-09-20

    申请号:US13233209

    申请日:2011-09-15

    IPC分类号: G03B27/32 G03F7/20

    摘要: A recording medium stores a program for causing a computer to execute a method of calculating a resist pattern. The method includes: a first step of calculating a light intensity distribution of an optical image formed on the resist, based on the reticle pattern and an exposure condition; a second step of convoluting, using a first diffusion length, the calculated light intensity distribution; a third step of calculating a representative light intensity from the calculated light intensity distribution or the convoluted light intensity distribution; a fourth step of correcting the convoluted light intensity distribution by adding, to the convoluted light intensity distribution, a correction function including a first function given by: { ∑ k = 0 n ⁢ ( a k ⁢ J k ) } ⁢ exp ⁡ ( - α ⁢ ⁢ J ) where J is the distribution of the representative light intensity; and a fifth step of calculating the resist pattern based on the corrected light intensity distribution and a slice level set in advance.

    VOLTAGE LEVEL GENERATOR CIRCUIT
    3.
    发明申请
    VOLTAGE LEVEL GENERATOR CIRCUIT 审中-公开
    电压电平发生器电路

    公开(公告)号:US20120249227A1

    公开(公告)日:2012-10-04

    申请号:US13350795

    申请日:2012-01-15

    IPC分类号: G05F3/02

    CPC分类号: G05F3/20

    摘要: A voltage level generator circuit comprised of a fixed voltage generator unit for generating a first electrical current in a fixed quantity from a first supply voltage; a first current mirror circuit unit including a first thin-film NMOSFET and a second thin-film NMOSFET and that outputs a second electrical current proportional to the first electrical current; a protective circuit including: a third thin-film NMOSFET and a first thick-film PMOSFET utilized as a grounded gate for protecting the second thin-film NMOSFET, a first diode for preventing inverse current flow to the first supply, and a second diode for preventing the gate-source voltage of the third thin-film NMOSFET from reaching a negative electrical potential; and a second current mirror circuit for outputting a third electrical current proportional to the second electrical current; and a first Zener diode unit for generating a first fixed voltage from a third electrical current.

    摘要翻译: 一种电压电平发生器电路,包括:固定电压发生器单元,用于从第一电源电压产生固定量的第一电流; 第一电流镜电路单元,包括第一薄膜NMOSFET和第二薄膜NMOSFET,并且输出与第一电流成比例的第二电流; 保护电路,包括:第三薄膜NMOSFET和用作保护第二薄膜NMOSFET的接地栅极的第一厚膜PMOSFET,用于防止反向电流流向第一电源的第一二极管和用于 防止第三薄膜NMOSFET的栅极 - 源极电压达到负电位; 以及第二电流镜电路,用于输出与第二电流成比例的第三电流; 以及用于从第三电流产生第一固定电压的第一齐纳二极管单元。

    RESIST PATTERN CALCULATION METHOD AND CALCULATION PROGRAM STORAGE MEDIUM
    4.
    发明申请
    RESIST PATTERN CALCULATION METHOD AND CALCULATION PROGRAM STORAGE MEDIUM 有权
    电阻图案计算方法和计算程序存储介质

    公开(公告)号:US20120092639A1

    公开(公告)日:2012-04-19

    申请号:US13233209

    申请日:2011-09-15

    IPC分类号: G03B27/58

    摘要: A recording medium stores a program for causing a computer to execute a method of calculating a resist pattern. The method includes: a first step of calculating a light intensity distribution of an optical image formed on the resist, based on the reticle pattern and an exposure condition; a second step of convoluting, using a first diffusion length, the calculated light intensity distribution; a third step of calculating a representative light intensity from the calculated light intensity distribution or the convoluted light intensity distribution; a fourth step of correcting the convoluted light intensity distribution by adding, to the convoluted light intensity distribution, a correction function including a first function given by: { ∑ k = 0 n  ( a k  J k ) }  exp  ( - α   J ) where J is the distribution of the representative light intensity; and a fifth step of calculating the resist pattern based on the corrected light intensity distribution and a slice level set in advance.

    摘要翻译: 记录介质存储用于使计算机执行计算抗蚀剂图案的方法的程序。 该方法包括:基于掩模图案和曝光条件计算形成在抗蚀剂上的光学图像的光强度分布的第一步骤; 使用第一扩散长度卷积计算的光强度分布的第二步骤; 从计算出的光强度分布或卷积光强度分布计算代表光强度的第三步骤; 第四步骤,通过向所述卷积光强度分布中加入包括由下式给出的第一函数的校正函数来校正所述卷积光强度分布:{Σk = 0 n(ak)J k)} exp( J)其中J是代表光强度的分布; 以及第五步骤,基于校正的光强度分布和预先设定的限幅电平来计算抗蚀剂图案。

    Content protection method and content protection system
    5.
    发明授权
    Content protection method and content protection system 失效
    内容保护方法和内容保护系统

    公开(公告)号:US06209097B1

    公开(公告)日:2001-03-27

    申请号:US09204000

    申请日:1998-12-01

    IPC分类号: G06F0124

    摘要: A recording medium in which a purchased image protected by a copyright or the like has been stored and a recording medium in which a user image has been stored is set, the purchased image as encrypted is decrypted and the images stored in both mediums are processed. The ID of a created image, user image data, link information representing encrypted purchased image data or the storage location of the purchased image data, and data specifying an image processing mode and the number of prints, are stored in a recording medium. In a DPE shop or the like, the purchased image data stored in the recording medium is decrypted, and the image processed by the user is reconstructed and printed in accordance with the data stored in the recording medium. A management center may give the allowance of use of the purchased image to the DPE shop, and the management center draws royalties from the accounts of individual DPE shops, sums the royalties and pays them into the accounts of individual proprietors of rights.

    摘要翻译: 其中存储了受版权保护的购买图像已经被存储的记录介质和其中存储了用户图像的记录介质被设置,所加密的购买图像被解密,并且处理在两个介质中存储的图像。 创建图像的ID,用户图像数据,表示加密的购买图像数据的链接信息或购买的图像数据的存储位置,以及指定图像处理模式和打印数量的数据被存储在记录介质中。 在DPE商店等中,存储在记录介质中的购买的图像数据被解密,并且根据存储在记录介质中的数据来重构和打印由用户处理的图像。 管理中心可以向DPE商店给予购买图像的使用许可,管理中心从个人DPE商店的帐户中提取特许权使用费,将特许权使用费归还给个人所有人的账户。