公开(公告)号：US4924476A

公开(公告)日：1990-05-08

申请号：US129024

申请日：1987-12-04

申请人： Abbas Behfar-Rad ,  S. Simon Wong

发明人： Abbas Behfar-Rad ,  S. Simon Wong

IPC分类号： H01S5/10

CPC分类号： H01S5/1071

摘要： A triangular ring laser utilizing total internal reflection at two angled facets and a preselected amount of reflection at a third angled facet is disclosed. Partial transmission occurs through the third facet to reduce the threshold current required for achieving stimulated emission. The facets are at three corners of the triangular laser, and are formed by chemically assisted ion beam etching in which SiO.sub.2 is used as a mask, whereby smooth vertical walls are produced to form facets having reflective characteristics equivalent to those formed by cleaving.

摘要翻译： 公开了一种三角环形激光器，其在两个成角度的小平面处使用全内反射，并且在第三角度小面处使用预选量的反射。 部分透射通过第三面发生，以减少实现受激发射所需的阈值电流。 小面在三角形激光器的三个角处，并且通过化学辅助离子束蚀刻形成，其中使用SiO 2作为掩模，由此产生平滑的垂直壁以形成具有与通过裂开形成的那些相反的反射特性的刻面。

公开(公告)号：US4746621A

公开(公告)日：1988-05-24

申请号：US938498

申请日：1986-12-05

申请人： David C. Thomas ,  S. Simon Wong

发明人： David C. Thomas ,  S. Simon Wong

IPC分类号： H01L21/3205 ,  H01L21/768 ,  H01L21/425 ,  H01L21/443

CPC分类号： H01L21/76867 ,  H01L21/32051 ,  H01L21/76825 ,  H01L21/76831 ,  H01L21/76876 ,  H01L21/76879

摘要： A planar interconnect using selective deposition of a refractory metal such as tungsten into oxide channels is disclosed. A layer of silicon dioxide as thick as the desired tungsten interconnect is placed on the surface of a substrate such as an integrated circuit wafer. Thereafter, a layer of silicon nitride about 100 nm thick is formed on the silicon dioxide. Channels are formed in the silicon dioxide by patterning and etching the composite dielectric layers. After the photoresist is removed, silicon or tungsten atoms at 40 KeV are implanted in the silicon dioxide channels, the silicon nitride acting as a mask. Typically, a dosage as high as 1.times.10.sup.17 cm.sup.-2 is used. The silicon or tungsten implant allows seeding of the tungsten or other refractory metal. The silicon nitride mask is selectively removed by a hot phosphoric acid solution, and a metal film is then selectively deposited to fill the channels in the silicon dioxide layer, which then forms a level of interconnects. The process is repeated to form vias and subsequent levels of interconnects.

摘要翻译： 公开了使用将难熔金属如钨选择性沉积到氧化物通道中的平面互连。 将诸如所需钨互连的厚度的二氧化硅层放置在诸如集成电路晶片的衬底的表面上。 此后，在二氧化硅上形成约100nm厚的氮化硅层。 通过图案化和蚀刻复合电介质层，在二氧化硅中形成沟道。 在除去光致抗蚀剂之后，将40KeV的硅或钨原子注入到二氧化硅通道中，氮化硅用作掩模。 通常，使用高达1×10 17 cm -2的剂量。 硅或钨植入物允许接合钨或其它难熔金属。 通过热磷酸溶液选择性地除去氮化硅掩模，然后选择性地沉积金属膜以填充二氧化硅层中的通道，然后形成一定程度的互连。 重复该过程以形成通孔和随后的互连级别。

公开(公告)号：US07236044B2

公开(公告)日：2007-06-26

申请号：US10965683

申请日：2004-10-13

申请人： Niranjan Talwalkar ,  Chik P. Yue ,  S. Simon Wong

发明人： Niranjan Talwalkar ,  Chik P. Yue ,  S. Simon Wong

IPC分类号： H03K3/01

CPC分类号： H03K17/162 ,  H03K17/063 ,  H03K2217/0018

摘要： Method and apparatus for adjusting an impedance of a substrate of a Metal-Oxide-Semiconductor (MOS) transistor by providing a bias voltage and connecting a frequency-selective circuit between the substrate and the bias voltage. The frequency-selective circuit is also provided with at least one reactive element, such as an inductive element or a capacitive element, to obtain a certain frequency-response of the frequency-selective circuit and thus adjusts the substrate impedance of the MOS transistor. The method and apparatus are compatible with standard CMOS technology and applicable to RF switches, including T/R switches for processing high-frequency analog signals.

摘要翻译： 通过提供偏置电压并连接衬底和偏置电压之间的频率选择电路来调节金属氧化物半导体（MOS）晶体管的衬底的阻抗的方法和装置。 频率选择电路还设置有至少一个电抗元件，例如电感元件或电容元件，以获得频率选择电路的一定频率响应，从而调节MOS晶体管的衬底阻抗。 该方法和设备与标准CMOS技术兼容，适用于RF开关，包括用于处理高频模拟信号的T / R开关。

公开(公告)号：US4907066A

公开(公告)日：1990-03-06

申请号：US158759

申请日：1988-02-22

申请人： David C. Thomas ,  S. Simon Wong

发明人： David C. Thomas ,  S. Simon Wong

IPC分类号： H01L21/3205 ,  H01L21/768

CPC分类号： H01L21/76879 ,  H01L21/32051

摘要： A planar interconnect using selective deposition of a refractory metal such as tungsten into oxide channels is disclosed. A layer of silicon dioxide as thick as the desired tungsten interconnect is placed on the surface of a substrate such as an integrated circuit wafer. Thereafter, a layer of silicon nitride about 100 nm thick is formed on the silicon dioxide. Channels are formed in the silicon dioxide by patterning and etching the composite dielectric layers. After the photoresist is removed, silicon or tungsten atoms at 40 KeV are implanted in the silicon dioxide channels, the silicon nitride acting as a mask. Typically, a dosage as high as 1.times.10.sup.17 cm.sup.-2 is used. The silicon or tungsten implant allows seeding of the tungsten or other retractory metal. The silicon nitride mask is selectively removed by a hot phosphoric acid solution, and a metal film is then selectively deposited to fill the channels in the silicon dioxide layer, which then forms a level of interconnects. The process is repeated to form vias and subsequent levels of interconnects.

摘要翻译： 公开了使用将难熔金属如钨选择性沉积到氧化物通道中的平面互连。 将诸如所需钨互连的厚度的二氧化硅层放置在诸如集成电路晶片的衬底的表面上。 此后，在二氧化硅上形成约100nm厚的氮化硅层。 通过图案化和蚀刻复合电介质层，在二氧化硅中形成沟道。 在除去光致抗蚀剂之后，将40KeV的硅或钨原子注入到二氧化硅通道中，氮化硅用作掩模。 通常，使用高达1×10 17 cm -2的剂量。 硅或钨植入物允许接种钨或其他回收金属。 通过热磷酸溶液选择性地除去氮化硅掩模，然后选择性地沉积金属膜以填充二氧化硅层中的通道，然后形成一定程度的互连。 重复该过程以形成通孔和随后的互连级别。

公开(公告)号：US4851368A

公开(公告)日：1989-07-25

申请号：US128850

申请日：1987-12-04

申请人： Abbas Behfar-Rad ,  S. Simon Wong

发明人： Abbas Behfar-Rad ,  S. Simon Wong

IPC分类号： H01S5/028 ,  H01S5/10

CPC分类号： H01S5/1071 ,  H01S5/028 ,  Y10S148/051 ,  Y10S148/056 ,  Y10S148/095 ,  Y10S148/106 ,  Y10S148/111 ,  Y10S438/948 ,  Y10S438/95

摘要： A triangular ring laser utilizing total internal reflection at two angled facets and a preselected amount of reflection at a third angled facet is disclosed. Partial transmission occurs through the third facet to reduce the threshold current required for achieving stimulated emission. The facets are at three corners of the triangular laser, and are formed by chemically assisted ion beam etching in which SiO.sub.2 is used as a mask, whereby smooth vertical walls are produced to form facets having reflective characteristics equivalent to those formed by cleaving.

摘要翻译： 公开了一种三角环形激光器，其在两个成角度的小平面处使用全内反射，并且在第三角度小面处使用预选量的反射。 部分透射通过第三面发生，以减少实现受激发射所需的阈值电流。 小面在三角形激光器的三个角处，并且通过化学辅助离子束蚀刻形成，其中使用SiO 2作为掩模，由此产生平滑的垂直壁以形成具有与通过裂开形成的那些相反的反射特性的刻面。