公开(公告)号：US3862017A

公开(公告)日：1975-01-21

申请号：US35395973

申请日：1973-04-24

申请人： TSUNEMITSU HIDEO ,  SHIBA HIROSHI

发明人： TSUNEMITSU HIDEO ,  SHIBA HIROSHI

IPC分类号： C25D11/26 ,  H01C17/02 ,  H01C17/26 ,  H01L21/70 ,  C23B5/48 ,  H01L11/00

CPC分类号： C25D11/26 ,  H01C17/02 ,  H01C17/262 ,  H01L21/707 ,  Y10T428/24917

摘要： A thin film of a high resistivity metal such as Ta, Ti, Mo or Nb is formed on a substrate. The side faces of the thin resistive film are surrounded by, and at least a greater part of the top surface of the thin resistive film is covered with an insulating substance which is a compound, such as an oxide or nitride of the high resistivity metal. The thin resistive film and the insulating substance form a substantially flat layer.

摘要翻译： 在基板上形成诸如Ta，Ti，Mo或Nb的高电阻率金属的薄膜。 薄电阻膜的侧面由薄电阻膜的顶表面的至少大部分被绝缘物质覆盖，该绝缘物质是诸如高电阻率金属的氧化物或氮化物的化合物。 薄电阻膜和绝缘物质形成基本平坦的层。