摘要:
Disclosed is a cart-attachable mobile golf bag, in which the golf bag is configured such that a head cover is detachably attached to an upper portion of a bag body storing golf clubs therein, and the golf bag is attached to a cart in a docking manner by engagement between a docking recess of the golf bag and a docking block of the cart inserted into the docking recess in a one-touch manner, thus making it possible that the golf bag is simply and firmly attached to the cart without requiring any separate tying process. In particular, the golf bag has a hard-shell structure, thus being safe even without requiring a separate wrapping cover when transported by air while being excellent in durability, and further the golf bag provides various storage spaces for storing various equipment other than golf clubs, thus being excellent in use efficiency.
摘要:
A crystallization apparatus for crystallizing a semiconductor layer formed on a substrate, the crystallization apparatus including: a laser generator, which generates a laser beam, and a stage on which the substrate is mounted, where the semiconductor layer is divided into a plurality of crystallization areas and a plurality of non-crystallization areas, and the laser beam is radiated onto the crystallization areas a plurality of times to crystallize the crystallization areas, where the laser beam is radiated onto different positions of the same crystallization area a plurality of times.
摘要:
An organic light-emitting display apparatus includes a substrate, a plurality of organic light-emitting diodes on the substrate, and a plurality of capacitors located next to at least one side of one of the organic light-emitting diodes. The capacitors are arranged inside trenches within the substrate.
摘要:
A thin film transistor array substrate includes a thin film transistor including a gate electrode, an active layer, and source and drain electrodes, a pixel electrode on a same layer as the gate electrode, a lower electrode of a capacitor, the lower electrode being on the same layer as the gate electrode, a first insulating layer on the gate electrode and the lower electrode, a second insulating layer between the active layer and the source and drain electrodes, an upper electrode on the first insulating layer, the upper electrode including a first layer made of a same material as the active layer, and a second layer made of a same material as the source and drain electrodes, and a third insulating layer that covers the source and drain electrodes and the upper electrode and exposes the pixel electrode.
摘要:
A method for crystallizing a silicon substrate includes manufacturing a crystallized silicon test substrate that is crystallized by scanning excimer laser annealing beams with different energy densities on respective areas of an amorphous silicon test substrate, irradiating a surface of the crystallized silicon test substrate using a light source, and measuring reflectivity corresponding to the respective areas of the crystallized silicon test substrate in a visible light wavelength range, extracting average reflectivities of the respective areas of the crystallized silicon test substrate in wavelength ranges corresponding to respective colors, calculating an optimum energy density (OPED) index per energy density by using a value acquired by subtracting average reflectivity of red-based colors from average reflectivity of blue-based colors, selecting an optimal energy density, and crystallizing an amorphous silicon substrate using the optimal energy density.
摘要:
Disclosed is a flash memory using fringing effects and an electrostatic shielding function. A gap between adjacent gate stacks is controlled by fringing effects, and an operation of each of the gate stacks is electrostatically shielded by a gate electrode extending to a tunneling insulation layer. Thus, coupling between the adjacent gate stacks is minimized by electrostatic shielding.
摘要:
A semiconductor memory apparatus including a repair circuit may comprise: a fuse set block configured to store a repair address, compare the repair address with an input address, and generate a primary repair signal; and a redundancy control block configured to receive the primary repair signal, determine whether a repair cell in a repair memory designated by the primary repair signal is failed or not, and generate a secondary repair signal which repair the failed repair cell with another repair cell in the repair memory.
摘要:
Disclosed are a glycoprotein analysis kit and use thereof. The glycoprotein analysis kit comprises a fluorescently labeled antibody, a fluorescently labeled biomaterial, and a support, and is used in a dual probing method for analyzing the content of a glycoprotein and profiling the oligosaccharide chain, simultaneously, and a method for selecting a single cell producing the glycoprotein having a desired glycosylation pattern. Also, a single cell producing the glycoprotein having a desired glycosylation pattern is provided.
摘要:
Provided is a method of manufacturing a high strength ferritic/martensitic steel. The method includes melting a ferritic/martensitic steel, hot-working the melted ferritic/martensitic steel, normalizing the hot-worked ferritic/martensitic steel at a temperature of about 1050° C. to about 1200° C., tempering the ferritic/martensitic steel at a temperature of about 600° C. or less, and leaving MX precipitates while preventing a M23C6 precipitate from being precipitated, and cold-working and thermal-treating the ferritic/martensitic steel in a multistage fashion, and precipitating M23C6 precipitates. Through the above described configuration, the high strength ferritic/martensitic steel that prevents a ductility from being deteriorated even in a high-temperature environment may be manufactured.
摘要:
An organic light emitting diode (OLED) display device and a method of fabricating the same. The OLED display device includes a substrate including an emission region and a non-emission region, a buffer layer arranged on the substrate, a semiconductor layer arranged in the non-emission region on the buffer layer, a gate insulating layer arranged on an entire surface of the substrate, a first electrode arranged in the emission region on the gate insulating layer, a gate electrode arranged in the non-emission region on the gate insulating layer, an interlayer insulating layer arranged on the entire surface of the substrate and partially exposing the first electrode, source and drain electrodes arranged on the interlayer insulating layer and electrically connected to the semiconductor layer and the first electrode, a protection layer arranged on the entire surface of the substrate and partially exposing the first electrode, an organic layer arranged on the first electrode and a second electrode arranged on the entire surface of the substrate.