CART-ATTACHABLE MOBILE GOLF BAG
    1.
    发明申请

    公开(公告)号:US20200238141A1

    公开(公告)日:2020-07-30

    申请号:US16535448

    申请日:2019-08-08

    申请人: Sung Ho Kim

    发明人: Sung Ho Kim

    摘要: Disclosed is a cart-attachable mobile golf bag, in which the golf bag is configured such that a head cover is detachably attached to an upper portion of a bag body storing golf clubs therein, and the golf bag is attached to a cart in a docking manner by engagement between a docking recess of the golf bag and a docking block of the cart inserted into the docking recess in a one-touch manner, thus making it possible that the golf bag is simply and firmly attached to the cart without requiring any separate tying process. In particular, the golf bag has a hard-shell structure, thus being safe even without requiring a separate wrapping cover when transported by air while being excellent in durability, and further the golf bag provides various storage spaces for storing various equipment other than golf clubs, thus being excellent in use efficiency.

    Thin film transistor array substrate, organic light-emitting display device comprising the same, and method of manufacturing the same
    4.
    发明授权
    Thin film transistor array substrate, organic light-emitting display device comprising the same, and method of manufacturing the same 有权
    薄膜晶体管阵列基板,包括该薄膜晶体管阵列基板的有机发光显示装置及其制造方法

    公开(公告)号:US08742425B2

    公开(公告)日:2014-06-03

    申请号:US13666196

    申请日:2012-11-01

    摘要: A thin film transistor array substrate includes a thin film transistor including a gate electrode, an active layer, and source and drain electrodes, a pixel electrode on a same layer as the gate electrode, a lower electrode of a capacitor, the lower electrode being on the same layer as the gate electrode, a first insulating layer on the gate electrode and the lower electrode, a second insulating layer between the active layer and the source and drain electrodes, an upper electrode on the first insulating layer, the upper electrode including a first layer made of a same material as the active layer, and a second layer made of a same material as the source and drain electrodes, and a third insulating layer that covers the source and drain electrodes and the upper electrode and exposes the pixel electrode.

    摘要翻译: 薄膜晶体管阵列基板包括薄膜晶体管,其包括栅电极,有源层以及源电极和漏电极,与栅电极相同的像素电极,电容器的下电极,下电极处于 与栅电极相同的层,栅电极和下电极上的第一绝缘层,有源层与源电极之间的第二绝缘层,第一绝缘层上的上电极,上电极包括 由与源极和漏电极相同的材料制成的第二层,以及覆盖源电极和漏电极以及上电极并使像素电极露出的第三绝缘层。

    METHOD FOR CRYSTALLIZING A SILICON SUBSTRATE
    5.
    发明申请
    METHOD FOR CRYSTALLIZING A SILICON SUBSTRATE 有权
    用于结晶硅基板的方法

    公开(公告)号:US20140120704A1

    公开(公告)日:2014-05-01

    申请号:US13890476

    申请日:2013-05-09

    IPC分类号: H01L21/02

    摘要: A method for crystallizing a silicon substrate includes manufacturing a crystallized silicon test substrate that is crystallized by scanning excimer laser annealing beams with different energy densities on respective areas of an amorphous silicon test substrate, irradiating a surface of the crystallized silicon test substrate using a light source, and measuring reflectivity corresponding to the respective areas of the crystallized silicon test substrate in a visible light wavelength range, extracting average reflectivities of the respective areas of the crystallized silicon test substrate in wavelength ranges corresponding to respective colors, calculating an optimum energy density (OPED) index per energy density by using a value acquired by subtracting average reflectivity of red-based colors from average reflectivity of blue-based colors, selecting an optimal energy density, and crystallizing an amorphous silicon substrate using the optimal energy density.

    摘要翻译: 一种硅衬底的结晶方法包括:制造结晶硅测试衬底,其通过在非晶硅测试衬底的各个区域上扫描具有不同能量密度的准分子激光退火光束而被结晶,使用光源照射结晶硅测试衬底的表面 ,并且在可见光波长范围内测量对应于结晶硅测试衬底的各个区域的反射率,提取结晶硅测试衬底的各个区域的平均反射率,其对应于各种颜色的波长范围,计算最佳能量密度(OPED )通过使用通过从基于蓝色的颜色的平均反射率减去红色颜色的平均反射率而获得的值,选择最佳能量密度,并使用最佳能量密度结晶非晶硅衬底而获得的值。

    FLASH MEMORY USING FRINGING EFFECTS AND ELECTROSTATIC SHIELDING
    6.
    发明申请
    FLASH MEMORY USING FRINGING EFFECTS AND ELECTROSTATIC SHIELDING 有权
    闪光效应和静电屏蔽

    公开(公告)号:US20130256782A1

    公开(公告)日:2013-10-03

    申请号:US13992298

    申请日:2011-12-05

    IPC分类号: H01L29/792

    摘要: Disclosed is a flash memory using fringing effects and an electrostatic shielding function. A gap between adjacent gate stacks is controlled by fringing effects, and an operation of each of the gate stacks is electrostatically shielded by a gate electrode extending to a tunneling insulation layer. Thus, coupling between the adjacent gate stacks is minimized by electrostatic shielding.

    摘要翻译: 公开了一种使用边缘效应和静电屏蔽功能的闪存。 相邻栅极堆叠之间的间隙由边缘效应控制,并且每个栅极堆叠的操作被延伸到隧道绝缘层的栅电极静电屏蔽。 因此,通过静电屏蔽使相邻栅极叠层之间的耦合最小化。

    Repair circuit and control method thereof
    7.
    发明授权
    Repair circuit and control method thereof 失效
    修理电路及其控制方法

    公开(公告)号:US08547762B2

    公开(公告)日:2013-10-01

    申请号:US13190046

    申请日:2011-07-25

    申请人: Sung Ho Kim

    发明人: Sung Ho Kim

    IPC分类号: G11C7/00

    CPC分类号: G11C17/14 G11C29/787

    摘要: A semiconductor memory apparatus including a repair circuit may comprise: a fuse set block configured to store a repair address, compare the repair address with an input address, and generate a primary repair signal; and a redundancy control block configured to receive the primary repair signal, determine whether a repair cell in a repair memory designated by the primary repair signal is failed or not, and generate a secondary repair signal which repair the failed repair cell with another repair cell in the repair memory.

    摘要翻译: 包括修复电路的半导体存储装置可以包括:熔丝组块,被配置为存储修复地址,将修复地址与输入地址进行比较,并生成主修复信号; 以及冗余控制块,被配置为接收所述主修复信号,确定由所述主修复信号指定的修复存储器中的修复单元是否故障,并且生成辅助修复信号,所述修复信号用另一修复单元修复所述故障修复单元 修复记忆。

    Manufacturing method of high strength ferritic/martensitic steels
    9.
    发明授权
    Manufacturing method of high strength ferritic/martensitic steels 有权
    高强度铁素体/马氏体钢的制造方法

    公开(公告)号:US08444782B2

    公开(公告)日:2013-05-21

    申请号:US12612101

    申请日:2009-11-04

    IPC分类号: C21D8/00

    摘要: Provided is a method of manufacturing a high strength ferritic/martensitic steel. The method includes melting a ferritic/martensitic steel, hot-working the melted ferritic/martensitic steel, normalizing the hot-worked ferritic/martensitic steel at a temperature of about 1050° C. to about 1200° C., tempering the ferritic/martensitic steel at a temperature of about 600° C. or less, and leaving MX precipitates while preventing a M23C6 precipitate from being precipitated, and cold-working and thermal-treating the ferritic/martensitic steel in a multistage fashion, and precipitating M23C6 precipitates. Through the above described configuration, the high strength ferritic/martensitic steel that prevents a ductility from being deteriorated even in a high-temperature environment may be manufactured.

    摘要翻译: 提供一种制造高强度铁素体/马氏体钢的方法。 该方法包括熔化铁素体/马氏体钢,对熔融的铁素体/马氏体钢进行热加工,使热处理的铁素体/马氏体钢在约1050℃至约1200℃的温度下归一化,回火铁素体/马氏体 钢在约600℃以下,留下MX析出物,同时防止M23C6沉淀物析出,并对铁素体/马氏体钢进行多级冷加工和热处理,并析出M23C6沉淀物。 通过上述结构,可以制造即使在高温环境下也能够防止延展性劣化的高强度铁素体/马氏体钢。

    Organic light emitting diode display device and method of fabricating the same
    10.
    发明授权
    Organic light emitting diode display device and method of fabricating the same 失效
    有机发光二极管显示装置及其制造方法

    公开(公告)号:US08415659B2

    公开(公告)日:2013-04-09

    申请号:US12822838

    申请日:2010-06-24

    IPC分类号: H01L29/08 H01L35/24 H01L51/00

    摘要: An organic light emitting diode (OLED) display device and a method of fabricating the same. The OLED display device includes a substrate including an emission region and a non-emission region, a buffer layer arranged on the substrate, a semiconductor layer arranged in the non-emission region on the buffer layer, a gate insulating layer arranged on an entire surface of the substrate, a first electrode arranged in the emission region on the gate insulating layer, a gate electrode arranged in the non-emission region on the gate insulating layer, an interlayer insulating layer arranged on the entire surface of the substrate and partially exposing the first electrode, source and drain electrodes arranged on the interlayer insulating layer and electrically connected to the semiconductor layer and the first electrode, a protection layer arranged on the entire surface of the substrate and partially exposing the first electrode, an organic layer arranged on the first electrode and a second electrode arranged on the entire surface of the substrate.

    摘要翻译: 一种有机发光二极管(OLED)显示装置及其制造方法。 OLED显示装置包括:发光区域和非发光区域的衬底;布置在衬底上的缓冲层;布置在缓冲层上的非发射区域中的半导体层;布置在整个表面上的栅绝缘层 设置在所述栅极绝缘层上的发光区域中的第一电极,配置在所述栅极绝缘层上的非发光区域中的栅极电极,配置在所述基板的整个表面上的部分地露出所述基板的部分, 第一电极,源电极和漏电极,布置在层间绝缘层上并电连接到半导体层和第一电极,保护层布置在基板的整个表面上并部分地暴露第一电极;布置在第一电极上的有机层 电极和布置在基板的整个表面上的第二电极。