公开(公告)号：US09312124B2

公开(公告)日：2016-04-12

申请号：US13605463

申请日：2012-09-06

申请人： Tai-Su Park ,  Gun-Joong Lee ,  Young-Dong Lee ,  Sang-Chul Han ,  Joo-Byoung Yoon

发明人： Tai-Su Park ,  Gun-Joong Lee ,  Young-Dong Lee ,  Sang-Chul Han ,  Joo-Byoung Yoon

IPC分类号： H01L21/02 ,  H01L29/423 ,  H01L29/49 ,  H01L29/78

CPC分类号： H01L21/02238 ,  H01L21/02252 ,  H01L21/02255 ,  H01L29/42356 ,  H01L29/4966 ,  H01L29/78

摘要： A method of fabricating a semiconductor device may include: forming a field region defining an active region in a substrate; forming a gate trench in which the active and field regions are partially exposed; forming a gate insulating layer on a surface of the active region; conformally forming a gate barrier layer including metal on the gate insulating layer and partially exposed field region; forming a gate electrode layer including metal on the gate barrier layer; and/or forming a gate capping layer. Forming the gate insulating layer may include forming a first gate oxide layer by primarily oxidizing the active region's surface, and forming a second gate oxide layer between the active region's surface and the first gate oxide layer by secondarily oxidizing the active region's surface. The gate capping layer may be in contact with the gate insulating layer, gate barrier layer, and/or gate electrode layer.

摘要翻译： 制造半导体器件的方法可以包括：在衬底中形成限定有源区的场区; 形成栅极沟槽，其中所述有源场区域和所述场区域部分地暴露; 在有源区的表面上形成栅极绝缘层; 在栅极绝缘层和部分曝光的场区域上保形地形成包括金属的栅极阻挡层; 在栅极阻挡层上形成包含金属的栅电极层; 和/或形成栅极覆盖层。 形成栅极绝缘层可以包括通过主要氧化有源区的表面形成第一栅极氧化层，并且通过二次氧化活性区的表面在有源区的表面和第一栅极氧化物层之间形成第二栅极氧化物层。 栅极覆盖层可以与栅极绝缘层，栅极势垒层和/或栅极电极层接触。

公开(公告)号：US08860671B2

公开(公告)日：2014-10-14

申请号：US12768452

申请日：2010-04-27

申请人： James Jung ,  Sang Chul Han

发明人： James Jung ,  Sang Chul Han

IPC分类号： G06F3/041 ,  G06F3/0354

CPC分类号： G06F3/03547

摘要： An input device and a method for providing an input device are provided. The input device assembly includes a base, a sensor support, and a scissor mechanism attached to the base and the sensor support. The scissor mechanism allows for only substantially uniform translation of the sensor support towards the base in response to a force biasing the sensor support substantially towards the base.

摘要翻译： 提供了一种用于提供输入装置的输入装置和方法。 输入装置组件包括底座，传感器支撑件和连接到基座和传感器支架的剪刀机构。 剪刀机构允许响应于将传感器支撑件基本上朝向底座偏置的力，基本均匀地将传感器支撑平移到底座。

公开(公告)号：US20130171801A1

公开(公告)日：2013-07-04

申请号：US13604352

申请日：2012-09-05

申请人： Tai-Su PARK ,  Jin-Hyuk CHOI ,  Sang-Chul HAN ,  Jung-Sup OH ,  Young-Dong LEE

发明人： Tai-Su PARK ,  Jin-Hyuk CHOI ,  Sang-Chul HAN ,  Jung-Sup OH ,  Young-Dong LEE

IPC分类号： H01L21/28 ,  H01L21/314

CPC分类号： C23C16/34 ,  C23C28/04 ,  H01L21/0214 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/28202 ,  H01L29/0657 ,  H01L29/42356 ,  H01L29/518 ,  H01L29/66621

摘要： Semiconductor devices, and methods of fabricating the same, include forming device isolation regions in a substrate to define active regions, forming gate trenches in the substrate to expose the active regions and device isolation regions, conformally forming a preliminary gate insulating layer including silicon oxide on the active regions exposed in the grate trenches, nitriding the preliminary gate insulating layer using a radio-frequency bias having a frequency of about 13.56 MHz and power between about 100 W and about 300 W to form a nitrided preliminary gate insulating layer including silicon oxynitride, forming a gate electrode material layer on the nitride preliminary gate insulating layer, partially removing the nitrided preliminary gate insulating layer and the gate electrode material layer to respectively form a gate insulating layer and a gate electrode layer, and forming a gate capping layer on the gate electrode layer to fill the gate trenches.

摘要翻译： 半导体器件及其制造方法包括在衬底中形成器件隔离区域以限定有源区域，在衬底中形成栅极沟槽以暴露有源区域和器件隔离区域，以共形形成包括氧化硅在内的初步栅极绝缘层 在栅极沟槽中暴露的有源区域，使用频率约13.56MHz，功率在约100W至约300W之间的射频偏压来对初级栅极绝缘层进行氮化，以形成氮化预备栅极绝缘层，其包括氮氧化硅， 在氮化物预选绝缘层上形成栅电极材料层，部分去除氮化预栅极绝缘层和栅电极材料层，分别形成栅极绝缘层和栅极电极层，并在栅极上形成栅极覆盖层 电极层填充栅极沟槽。

公开(公告)号：US20130164919A1

公开(公告)日：2013-06-27

申请号：US13605463

申请日：2012-09-06

申请人： Tai-Su PARK ,  Gun-Joong LEE ,  Young-Dong LEE ,  Sang-Chul HAN ,  Joo-Byoung YOON

发明人： Tai-Su PARK ,  Gun-Joong LEE ,  Young-Dong LEE ,  Sang-Chul HAN ,  Joo-Byoung YOON

IPC分类号： H01L21/31 ,  H01L21/20

CPC分类号： H01L21/02238 ,  H01L21/02252 ,  H01L21/02255 ,  H01L29/42356 ,  H01L29/4966 ,  H01L29/78

摘要： A method of fabricating a semiconductor device may include forming active and field regions in a substrate; forming a gate trench in which the active and field regions are exposed; forming a gate insulating layer on a surface of the exposed active region, wherein forming the gate insulating layer includes forming a first gate oxide layer by primarily oxidizing the surface of the active region, and forming a second gate oxide layer between the surface of the active region and the first gate oxide layer by secondarily oxidizing the surface of the active region; conformally forming a gate barrier layer on the gate insulating layer and the exposed field region; forming a gate electrode layer on the gate barrier layer; and forming a gate capping layer in contact with the gate insulating layer, the gate barrier layer, and the gate electrode layer in the gate trench.

摘要翻译： 制造半导体器件的方法可以包括在衬底中形成有源和场区域; 形成其中所述有源和场区域被暴露的栅极沟槽; 在所述暴露的有源区的表面上形成栅极绝缘层，其中形成所述栅极绝缘层包括通过主要氧化所述有源区的表面形成第一栅极氧化物层，以及在所述有源区的表面之间形成第二栅极氧化物层 区域和第一栅氧化层，通过二次氧化有源区的表面; 在所述栅极绝缘层和所述曝光场区域上保形地形成栅极阻挡层; 在栅极阻挡层上形成栅极电极层; 以及形成与栅极沟槽中的栅极绝缘层，栅极阻挡层和栅电极层接触的栅极覆盖层。

公开(公告)号：US20120118548A1

公开(公告)日：2012-05-17

申请号：US13387211

申请日：2010-07-23

申请人： Sang Chul Han ,  Sin Il Choi ,  Jang Ki Lee

发明人： Sang Chul Han ,  Sin Il Choi ,  Jang Ki Lee

IPC分类号： F28F1/00

CPC分类号： F28D1/0333 ,  F28D9/0043 ,  F28F3/046

摘要： A plate heat exchanger realizing improved heat exchange performance by increasing the fluidity of fluids and by promoting turbulence of the fluids, including: heat exchange elements stacked by being laid one on top of another and individually formed by assembling upper and lower plates, with an internal flow channel defined in each of the heat exchange elements and an external flow channel defined between the heat exchange elements, the internal and external flow channels allowing internal and external fluids to pass therethrough, respectively, wherein the upper and lower plates are provided with respective wave patterns having ridges and valleys, each of the heat exchange elements has an inlet port and an outlet port, the upper and lower plates respectively have an upper flange and a lower flange which are assembled with each other through fitting, and first and second flat parts are formed around the upper and lower flanges.

摘要翻译： 一种板式热交换器，其通过增加流体的流动性和促进流体的紊流来实现改进的热交换性能，包括：通过将上部和下部板组装在一起而分别形成的热交换元件，内部由内部 每个热交换元件中限定的流动通道和限定在热交换元件之间的外部流动通道，允许内部和外部流体分别通过的内部和外部流动通道，其中上部和下部板设置有相应的波 具有脊和谷的图案，每个热交换元件具有入口和出口，所述上板和下板分别具有通过配件彼此组装的上凸缘和下凸缘;以及第一和第二平面部分 围绕上下凸缘形成。

公开(公告)号：US20120031598A1

公开(公告)日：2012-02-09

申请号：US13264450

申请日：2010-04-15

申请人： Sang Chul Han ,  Sin II Choi ,  Rak Gyun Kim

发明人： Sang Chul Han ,  Sin II Choi ,  Rak Gyun Kim

IPC分类号： F28F3/14

CPC分类号： F28D1/0333 ,  F28D9/0043 ,  F28F3/042 ,  F28F3/044 ,  F28F3/046 ,  F28F9/026

摘要： A plate heat exchanger capable of increasing the fluidity of a fluid and realizing improved heat exchange efficiency, wherein each of stacked heat exchange elements are formed by assembling upper and lower plates, with first and second flow channels for first and second fluids respectively defined in each element and between the elements, inlet and outlet ports formed in opposite ends of the element, upper and lower flanges formed on the respective upper and lower plates, and upper and lower flow grooves diagonally extending on the lower surface of the upper plate and on the upper surface of the lower plate and intersecting with each other to define the first flow channel, wherein a flow guide structure for guiding the first fluid in at least two flow directions is provided on each of the areas around the inlet and outlet ports of the upper and lower plates.

摘要翻译： 一种板式热交换器，其能够增加流体的流动性并实现改进的热交换效率，其中每个堆叠的热交换元件通过组装上板和下板而形成，第一和第二流动通道分别限定在每个 元件之间，元件之间，形成在元件的相对端部的入口和出口端口，形成在相应的上板和下板上的上凸缘和下凸缘，以及在上板的下表面上对角延伸的上流动槽和下流动槽， 下板的上表面并且彼此相交以限定第一流动通道，其中用于在至少两个流动方向上引导第一流体的流动引导结构设置在上部的入口和出口周围的每个区域上 和下板。

公开(公告)号：US20110100156A1

公开(公告)日：2011-05-05

申请号：US12725145

申请日：2010-03-16

申请人： Se Yong Jung ,  Young Hee Han ,  Byung Jun Park ,  Sang Chul Han ,  Byeong Cheol Park ,  Jeong Phil Lee

发明人： Se Yong Jung ,  Young Hee Han ,  Byung Jun Park ,  Sang Chul Han ,  Byeong Cheol Park ,  Jeong Phil Lee

IPC分类号： F16F15/315

CPC分类号： F16F15/30 ,  F16F15/315 ,  Y10T74/2132

摘要： A rotor reducing stress concentration generated by centrifugal force, the rotor having interference fit between a reinforcing ring and the external circumference of a rotor cylinder or rotor cylinder having a hole, wherein the rotor preliminarily rotates at high speed so that the rotor is plastic-deformed in advance, so that less plastic-deformation occurs even when the rotor rotates at high speed compared to the case where plastic deformation is not performed in advance.

摘要翻译： 由离心力产生的转子减小应力集中，转子在加强环与具有孔的转子筒或转子缸的外周之间具有过盈配合，其中转子预先高速旋转，使得转子塑性变形 即使当转子与预先不进行塑性变形的情况相比高转速时也发生较少的塑性变形。

公开(公告)号：US20090033232A1

公开(公告)日：2009-02-05

申请号：US12171501

申请日：2008-07-11

申请人： Jeong-Hoon Kim ,  Jung-Pil Park ,  Suk-Ki Kim ,  Sang-Chul Han

发明人： Jeong-Hoon Kim ,  Jung-Pil Park ,  Suk-Ki Kim ,  Sang-Chul Han

IPC分类号： G09G3/10 ,  G09G3/28

CPC分类号： G09G3/296 ,  G09G3/2927 ,  G09G2310/066 ,  G09G2320/041

摘要： A plasma display device including a plasma display panel (PDP), a temperature detector for detecting temperature of the PDP, a driver for applying a driving voltage to a scan electrode, and a controller for generating a control signal to control the driver according to the temperature. The driver includes a transistor and first and second resistors. The transistor is coupled between a first power source and the scan electrode. The first power source supplies a scan voltage to the scan electrode. At least one of the first resistor and the second resistor is a variable resistor having a resistance that varies according to the control signal of the controller. A low discharge due to high temperature can be reduced or prevented, and the number of power sources of the plasma display device can be reduced.

摘要翻译： 一种等离子体显示装置，包括等离子体显示面板（PDP），用于检测PDP的温度的温度检测器，向扫描电极施加驱动电压的驱动器，以及用于产生控制信号的控制器，以根据 温度。 驱动器包括晶体管和第一和第二电阻器。 晶体管耦合在第一电源和扫描电极之间。 第一电源向扫描电极提供扫描电压。 第一电阻器和第二电阻器中的至少一个是具有根据控制器的控制信号而变化的电阻的可变电阻器。 可以降低或防止由于高温引起的低放电，并且可以减少等离子体显示装置的电源数量。

公开(公告)号：US08835275B2

公开(公告)日：2014-09-16

申请号：US13604352

申请日：2012-09-05

申请人： Tai-Su Park ,  Jin-Hyuk Choi ,  Sang-Chul Han ,  Jung-Sup Oh ,  Young-Dong Lee

发明人： Tai-Su Park ,  Jin-Hyuk Choi ,  Sang-Chul Han ,  Jung-Sup Oh ,  Young-Dong Lee

IPC分类号： H01L21/28

CPC分类号： C23C16/34 ,  C23C28/04 ,  H01L21/0214 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/28202 ,  H01L29/0657 ,  H01L29/42356 ,  H01L29/518 ,  H01L29/66621

摘要： Semiconductor devices, and methods of fabricating the same, include forming device isolation regions in a substrate to define active regions, forming gate trenches in the substrate to expose the active regions and device isolation regions, conformally forming a preliminary gate insulating layer including silicon oxide on the active regions exposed in the grate trenches, nitriding the preliminary gate insulating layer using a radio-frequency bias having a frequency of about 13.56 MHz and power between about 100 W and about 300 W to form a nitrided preliminary gate insulating layer including silicon oxynitride, forming a gate electrode material layer on the nitride preliminary gate insulating layer, partially removing the nitrided preliminary gate insulating layer and the gate electrode material layer to respectively form a gate insulating layer and a gate electrode layer, and forming a gate capping layer on the gate electrode layer to fill the gate trenches.

摘要翻译： 半导体器件及其制造方法包括在衬底中形成器件隔离区域以限定有源区域，在衬底中形成栅极沟槽以暴露有源区域和器件隔离区域，以共形形成包括氧化硅在内的初步栅极绝缘层 在栅极沟槽中暴露的有源区域，使用频率约13.56MHz，功率在约100W至约300W之间的射频偏压来对初级栅极绝缘层进行氮化，以形成氮化预备栅极绝缘层，其包括氮氧化硅， 在氮化物预选绝缘层上形成栅电极材料层，部分去除氮化预栅极绝缘层和栅电极材料层，分别形成栅极绝缘层和栅极电极层，并在栅极上形成栅极覆盖层 电极层填充栅极沟槽。

公开(公告)号：US20120032936A1

公开(公告)日：2012-02-09

申请号：US12979562

申请日：2010-12-28

申请人： Suk-Ki Kim ,  Sang-Chul Han ,  Sang-Hun Park

发明人： Suk-Ki Kim ,  Sang-Chul Han ,  Sang-Hun Park

IPC分类号： G09G5/00 ,  G09G3/28

CPC分类号： G09G3/297 ,  G09G3/2965 ,  G09G2300/0426

摘要： A plasma display is disclosed. In the plasma display, a first transistor for applying a low level voltage of a sustain pulse is connected to a high voltage terminal of a scanning circuit and a second transistor for applying a high level voltage of the sustain pulse is connected to a low voltage terminal of the scanning circuit. The first and the second transistors are alternatively turned on during sustain period, and the sustain pulse is applied to the scan electrode.

摘要翻译： 公开了一种等离子体显示器。 在等离子体显示器中，用于施加维持脉冲的低电平电压的第一晶体管连接到扫描电路的高电压端子，并且用于施加维持脉冲的高电平电压的第二晶体管连接到低电压端子 的扫描电路。 第一晶体管和第二晶体管在维持周期期间交替地导通，维持脉冲被施加到扫描电极。