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公开(公告)号：US09793056B1
公开(公告)日：2017-10-17
申请号：US15233171
申请日：2016-08-10
申请人： Santanu Bag , Michael F Durstock
发明人： Santanu Bag , Michael F Durstock
IPC分类号： H01G9/00 , H01L51/42 , H01L51/00 , H01L31/072 , H01G9/20 , H01L31/0256
CPC分类号： H01G9/2013 , H01L31/072 , H01L51/0028 , H01L51/0077 , H01L51/42 , H01L51/4213 , H01L2031/0344 , Y02E10/549
摘要： A method for making a layered perovskite structure comprises: a) performing a vapor assisted surface treatment (VAST) of a substrate with a surface passivating agent; b) applying a layer of PbI2 to the passivating agent; c) exposing the PbI2 to methylammonium iodide (CH3NH3I) in an orthogonal solvent; and d) annealing the structure. A PEDOT:PSS coated ITO glass substrate may be used. The surface passivation agent may be one a chalcogenide-containing species with the general chemical formula (E3E4)N(E1E2)N′C═X where any one of E1, E2, E3 and E4 is independently selected from C1-C15 organic substituents comprising from 0 to 15 heteroatoms or hydrogen, and X is S, Se or Te, thiourea, thioacetamide, selenoacetamide, selenourea, H2S, H2Se, H2Te or LXH wherein L is a Cn organic substituent comprising heteroatoms and X═S, Se, or Te. The passivating agent may be applied by spin-coating, inkjet-printing, slot-die-coating, aerosol-jet printing, PVD, CVD, and electrochemical deposition.
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2.发明授权公开(公告)号：US07727506B2
公开(公告)日：2010-06-01
申请号：US12041259
申请日：2008-03-03
CPC分类号： B01J13/0091 , Y10S977/773 , Y10S977/775
摘要： Soluble chalcogenido clusters together with transition metal ions and main group elements are shown to provide gels having interconnected, open frameworks. Following supercritical drying with liquid carbon dioxide, the chalcogels may be converted to aerogels. The aerogels possess high internal surface areas with a broad pore size distribution that is dependent upon the precursors used and the aging conditions applied. Some of the gels are encompassed by formulas such as M4[M′4Qx]n, M4[M′2Qy]n, M4[M′Qx]n, M3[M″Qx]n, or Me2[M′″Qx]n, where M is a divalent, trivalent, or tetravalent metal ion; M′, M″, and M′″ are typically Ge, Sn, P, As, Sb, Mo, or W; and Q is typically S, Se, or Te. Methods of preparing the chalcogenido clusters are also provided.
摘要翻译： 可溶性硫属元素簇与过渡金属离子和主族元素一起显示出提供具有互连的开放框架的凝胶。 在用液体二氧化碳进行超临界干燥后，可以将硫属凝胶转化为气凝胶。 气凝胶具有高的内表面积，具有广泛的孔径分布，其取决于所使用的前体和施加的老化条件。 一些凝胶被诸如M4 [M'4Qx] n，M4 [M'2Qy] n，M4 [M'Qx] n，M3 [M“Qx] n或Me2 [M'”Qx] n，其中M是二价，三价或四价金属离子; M'，M“和M'”通常为Ge，Sn，P，As，Sb，Mo或W; Q通常为S，Se或Te。 还提供了制备硫属元素簇的方法。
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3.发明申请SEMICONDUCTING AEROGELS FROM CHALCOGENIDO CLUSTERS WITH BROAD APPLICATIONS 有权来自具有广泛应用的CHALCOGENIDO群集的半导体航空器公开(公告)号：US20080241050A1
公开(公告)日：2008-10-02
申请号：US12041259
申请日：2008-03-03
CPC分类号： B01J13/0091 , Y10S977/773 , Y10S977/775
摘要： Soluble chalcogenido clusters together with transition metal ions and main group elements are shown to provide gels having interconnected, open frameworks. Following supercritical drying with liquid carbon dioxide, the chalcogels may be converted to aerogels. The aerogels possess high internal surface areas with a broad pore size distribution that is dependent upon the precursors used and the aging conditions applied. Some of the gels are encompassed by formulas such as M4[M′4Qx]n, M4[M′2Qy]n, M4[M′Qx]n, M3[M″Qx]n, or Me2[M′″Qx]n, where M is a divalent, trivalent, or terravalent metal ion; M′, M″, and M′″ are typically Ge, Sn, P, As, Sb, Mo, or W; and Q is typically S, Se, or Te. Methods of preparing the chalcogenido clusters are also provided.
摘要翻译： 可溶性硫属元素簇与过渡金属离子和主族元素一起显示出提供具有互连的开放框架的凝胶。 在用液体二氧化碳进行超临界干燥后，可以将硫属凝胶转化为气凝胶。 气凝胶具有高的内表面积，具有广泛的孔径分布，其取决于所使用的前体和施加的老化条件。 一些凝胶被公式包围，例如M 4，M 1，N 2，M 3， [M + 2] M 3，M 4，M 4， M 3，M 3，M 3，M 3，...，N 3， 或其中M是二价，三价或三价金属离子;或者其中M是二价，三价或三价金属离子; M'，M“和M”'通常为Ge，Sn，P，As，Sb，Mo或W; Q通常为S，Se或Te。 还提供了制备硫属元素簇的方法。
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公开(公告)号：US09368660B2
公开(公告)日：2016-06-14
申请号：US13207269
申请日：2011-08-10
IPC分类号： B05D5/12 , H01L31/032
CPC分类号： H01L31/0326 , H01L31/022425 , H01L31/022475 , H01L31/022483 , H01L31/073 , Y02E10/50 , Y10T428/31678
摘要： Techniques for fabrication of kesterite Cu—Zn—Sn—(Se,S) films and improved photovoltaic devices based on these films are provided. In one aspect, a method of fabricating a kesterite film having a formula Cu2−xZn1+ySn(S1−zSez)4+q, wherein 0≦x≦1; 0≦y≦1; 0≦z≦1; and −1≦q≦1 is provided. The method includes the following steps. A substrate is provided. A bulk precursor layer is formed on the substrate, the bulk precursor layer comprising Cu, Zn, Sn and at least one of S and Se. A capping layer is formed on the bulk precursor layer, the capping layer comprising at least one of Sn, S and Se. The bulk precursor layer and the capping layer are annealed under conditions sufficient to produce the kesterite film having values of x, y, z and q for any given part of the film that deviate from average values of x, y, z and q throughout the film by less than 20 percent.
摘要翻译： 提供了基于这些膜的Kesterite Cu-Zn-Sn-（Se，S）膜的制造技术和改进的光电器件。 一方面，一种制备具有式Cu2-xZn1 + ySn（S1-zSez）4 + q的kesterite膜的方法，其中0＆nlE; x＆nlE; 1; 0＆nlE; y＆nlE; 1; 0＆nlE; z＆nlE; 1; 和-1＆nlE; q＆nlE; 1。 该方法包括以下步骤。 提供基板。 本体前体层形成在衬底上，该主体前体层包含Cu，Zn，Sn以及S和Se中的至少一个。 在本体前体层上形成覆盖层，所述覆盖层包含Sn，S和Se中的至少一种。 本体前体层和覆盖层在足以产生具有x，y，z和q值的kesterite膜的条件下退火，对于膜的任何给定部分偏离x，y，z和q的平均值，整个 电影不到20％。
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公开(公告)号：US20130037090A1
公开(公告)日：2013-02-14
申请号：US13207269
申请日：2011-08-10
IPC分类号： B05D3/02 , C23C16/30 , B05D1/02 , B05D1/18 , B05D1/28 , B05D1/30 , B05D3/12 , B05D7/00 , B05D7/14 , B05D7/02 , C23C14/34 , C23C28/00 , B32B15/04 , H01L31/02 , B05D5/00
CPC分类号： H01L31/0326 , H01L31/022425 , H01L31/022475 , H01L31/022483 , H01L31/073 , Y02E10/50 , Y10T428/31678
摘要： Techniques for fabrication of kesterite Cu—Zn—Sn—(Se,S) films and improved photovoltaic devices based on these films are provided. In one aspect, a method of fabricating a kesterite film having a formula Cu2−xZn1+ySn(S1−zSez)4+q, wherein 0≦x≦1; 0≦y≦1; 0≦z≦1; and −1≦q≦1 is provided. The method includes the following steps. A substrate is provided. A bulk precursor layer is formed on the substrate, the bulk precursor layer comprising Cu, Zn, Sn and at least one of S and Se. A capping layer is formed on the bulk precursor layer, the capping layer comprising at least one of Sn, S and Se. The bulk precursor layer and the capping layer are annealed under conditions sufficient to produce the kesterite film having values of x, y, z and q for any given part of the film that deviate from average values of x, y, z and q throughout the film by less than 20 percent.
摘要翻译： 提供了基于这些膜的Kesterite Cu-Zn-Sn-（Se，S）膜的制造技术和改进的光电器件。 一方面，一种制备具有式Cu2-xZn1 + ySn（S1-zSez）4 + q的kesterite膜的方法，其中0＆nlE; x＆nlE; 1; 0＆nlE; y＆nlE; 1; 0＆nlE; z＆nlE; 1; 和-1＆nlE; q＆nlE; 1。 该方法包括以下步骤。 提供基板。 本体前体层形成在衬底上，该主体前体层包含Cu，Zn，Sn以及S和Se中的至少一个。 在本体前体层上形成覆盖层，所述覆盖层包含Sn，S和Se中的至少一种。 本体前体层和覆盖层在足以产生具有x，y，z和q值的kesterite膜的条件下退火，对于膜的任何给定部分偏离x，y，z和q的平均值，整个 电影不到20％。
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