公开(公告)号：US4719125A

公开(公告)日：1988-01-12

申请号：US924111

申请日：1986-11-03

申请人： Louis G. Anello ,  Satish K. Gupta ,  Stephen W. Kirtley ,  George S. Wooster ,  Ralph L. DePrenda

发明人： Louis G. Anello ,  Satish K. Gupta ,  Stephen W. Kirtley ,  George S. Wooster ,  Ralph L. DePrenda

IPC分类号： H01L21/312 ,  H01L21/316 ,  H01L23/532 ,  B05D5/12

CPC分类号： H01L21/02123 ,  H01L21/02164 ,  H01L21/02222 ,  H01L21/02282 ,  H01L21/02337 ,  H01L21/3125 ,  H01L21/316 ,  H01L23/5329 ,  H01L2924/0002 ,  Y10T428/31663

摘要： An improved method is presented for the deposition of dielectric films in the fabrication of integrated circuits (ICs), wherein a solution of polymers derived from cyclosilazanes is employed to deposit dielectric films on semiconductor substrates by the spin-on technique. These spin-on films planarize (smooth out) underlying substrate topography and therefore are especially advantageous in multilevel metallization processes where they allow a highly uniform and continuous deposition of a subsequent layer of metallization resulting in improved yield and reliability of ICs.

摘要翻译： 介绍了一种用于在制造集成电路（IC）中沉积介电膜的改进方法，其中使用衍生自环硅氮烷的聚合物溶液通过旋涂技术在半导体衬底上沉积介电膜。 这些旋涂膜平坦化（平滑）下面的衬底形貌，因此在多层金属化工艺中尤其有利，在这些过程中，它们允许后续的金属化层的高度均匀和连续的沉积，从而提高IC的产量和可靠性。