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公开(公告)号：US20070218664A1
公开(公告)日：2007-09-20
申请号：US11725467
申请日：2007-03-20
申请人： Hideki Ito , Satoshi Inada , Yoshikazu Moriyama
发明人： Hideki Ito , Satoshi Inada , Yoshikazu Moriyama
CPC分类号： H01L21/68735 , C23C16/4584 , C23C16/4585 , C23C16/4586 , C30B25/12 , C30B25/165 , C30B29/06 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/02661 , H01L21/68728
摘要： A vapor phase epitaxial growth method using a vapor phase epitaxy apparatus having a chamber, a support structure holding thereon a substrate in the chamber, a first flow path supplying a reactant gas for film formation on the substrate and a second flow path for exhaust of the gas, said method includes rotating the substrate, supplying the reactant gas and a carrier gas to thereby perform vapor-phase epitaxial growth of a semiconductor film on the substrate, and during the vapor-phase epitaxial growth of the semiconductor film on the substrate, controlling process parameters to make said semiconductor film uniform in thickness, said process parameters including flow rates and concentrations of the reactant gas and the carrier gas, a degree of vacuum within said chamber, a temperature of the substrate, and a rotation speed of said substrate.
摘要翻译： 一种使用具有室的气相外延生长装置的气相外延生长方法，在室内保持基板的支撑结构，在基板上供给成膜用反应气体的第一流路和用于排气的第二流路 气体，所述方法包括旋转衬底，提供反应气体和载气，从而在衬底上进行半导体膜的气相外延生长，并且在衬底上的半导体膜的气相外延生长期间，控制 使所述半导体膜的厚度均匀的工艺参数，所述工艺参数包括反应气体和载气的流速和浓度，所述室内的真空度，基板的温度和所述基板的转速。
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公开(公告)号：US20070023869A1
公开(公告)日：2007-02-01
申请号：US11494649
申请日：2006-07-28
申请人： Hiroshi Furutani , Yoshikazu Moriyama , Seiichi Nakazawa , Kunihiko Suzuki , Hideki Arai , Satoshi Inada
发明人： Hiroshi Furutani , Yoshikazu Moriyama , Seiichi Nakazawa , Kunihiko Suzuki , Hideki Arai , Satoshi Inada
IPC分类号： H01L23/58
CPC分类号： C23C16/4585 , C30B25/12
摘要： A vapor phase deposition apparatus includes a chamber, a support table disposed in the chamber and adapted to support a substrate in the chamber, a first passage connected to the chamber and adapted to supply gas to the chamber to form a film on the substrate, and a second passage connected to the chamber and adapted to discharge the gas from the chamber. The support table includes a first depressed portion and a second depressed portion formed in a bottom part of the first depressed portion, a bottom face of the second depressed portion for supporting the substrate.
摘要翻译： 气相沉积设备包括：室，设置在室中并适于在室中支撑衬底的支撑台，连接到室的第一通道，并适于向腔室供应气体以在衬底上形成膜;以及 第二通道，其连接到所述室并适于从所述室排放气体。 支撑台包括形成在第一凹部的底部中的第一凹部和第二凹部，第二凹部的底面用于支撑基板。
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公开(公告)号：US20150072440A1
公开(公告)日：2015-03-12
申请号：US14201108
申请日：2014-03-07
IPC分类号： H01L43/12 , H01L21/3065
CPC分类号： H01L43/12 , H01L27/228 , H01L43/02 , H01L43/08
摘要： According to one embodiment, a method of manufacturing a magnetoresistive element, the method includes forming a non-magnetic layer on a first magnetic layer, forming a second magnetic layer on the non-magnetic layer, and patterning the second magnetic layer by a RIE using an etching gas including a noble gas and a hydrocarbon gas.
摘要翻译： 根据一个实施例，一种制造磁阻元件的方法，该方法包括在第一磁性层上形成非磁性层，在非磁性层上形成第二磁性层，并通过RIE使第二磁性层图案化 包括惰性气体和烃气体的蚀刻气体。
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公开(公告)号：US08796594B2
公开(公告)日：2014-08-05
申请号：US11723028
申请日：2007-03-16
CPC分类号： H01L21/67103
摘要： A semiconductor manufacturing equipment is provided herein. The semiconductor manufacturing equipment includes a heater element configured to heat a wafer, a first connection part and a second connection part integrated with the heater element, a first electrode electrically contacted with and fixed to the first connection part on a first surface of the first electrode, and a second electrode electrically contacted with and fixed to the second connection part on a second surface of the second electrode. The second surface is perpendicular to the direction of the first surface, and the heater element produces heat by applying a voltage between the first electrode and the second electrode.
摘要翻译： 本文提供半导体制造设备。 半导体制造设备包括：加热元件，被配置为加热晶片，第一连接部分和与加热器元件集成的第二连接部分;与第一电极的第一表面电接触并固定到第一连接部分的第一电极 以及与第二电极电连接并固定到第二连接部分的第二电极的第二表面上的第二电极。 第二表面垂直于第一表面的方向，并且加热器元件通过在第一电极和第二电极之间施加电压而产生热量。
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公开(公告)号：US20090310078A1
公开(公告)日：2009-12-17
申请号：US12542812
申请日：2009-08-18
IPC分类号： G02F1/1345
CPC分类号： G02F1/134363 , G02F1/1345
摘要： Disclosed is a liquid crystal display device that includes a TFT substrate. A plurality of gate lines and a plurality of common lines extend in a first direction on the TFT substrate. Drain lines extend in a second direction substantially perpendicularly to these lines. Bus lines are located outside a display area and are extending parallel to the drain lines. Common line terminals are provided on either side of each block that is constituted by a predetermined number of gate terminals. The common line terminals and the lead lines therefor are formed on the same layer as the drain lines and are connected to the bus lines on the same layer without any contacts being used. Resistance along the routes taken by common lines can be reduced.
摘要翻译： 公开了一种包括TFT基板的液晶显示装置。 多个栅极线和多个公共线在TFT基板上沿第一方向延伸。 排水线在大致垂直于这些线的第二方向上延伸。 总线位于显示区域外部并且平行于排出线延伸。 公共端子设置在由预定数量的栅极端子构成的每个块的任一侧上。 公共线端子及其引线形成在与漏极线相同的层上，并且在相同层上连接到总线，而不使用任何接触。 可以减少沿着公共线路路线的电阻。
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公开(公告)号：US07570339B2
公开(公告)日：2009-08-04
申请号：US11109960
申请日：2005-04-20
申请人： Tsutomu Kadotani , Satoshi Inada , Takashi Kamino , Yusuke Nogami
发明人： Tsutomu Kadotani , Satoshi Inada , Takashi Kamino , Yusuke Nogami
IPC分类号： G02F1/1339
CPC分类号： G02F1/13394
摘要： A liquid crystal display device includes an active matrix substrate and a counter substrate opposing each other with a gap therebetween defined by a plurality of columnar spacers. The active matrix substrate has a plurality of spacer holes each receiving therein a corresponding one of the columnar spacers, and a plurality of dummy spacer holes aligned with the spacer holes and each receiving therein no columnar spacer.
摘要翻译： 液晶显示装置包括有源矩阵基板和对置基板，彼此相对，间隙由多个柱状间隔件限定。 有源矩阵基板具有多个间隔孔，每个隔离孔在其中容纳相应的一个柱状间隔件，以及与间隔孔对准的多个虚拟间隔孔，并且每个间隔孔不接纳柱形间隔件。
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公开(公告)号：US20070221657A1
公开(公告)日：2007-09-27
申请号：US11723028
申请日：2007-03-16
IPC分类号： H05B1/02
CPC分类号： H01L21/67103
摘要： Semiconductor manufacturing equipment includes a heater element configured to heat a wafer, a first connection part and a second connection part which are integrated with the heater element, configured to apply voltages to the heater element, a first electrode contacted with and fixed to the first connection part on a first surface of the first electrode configured to be to apply a voltage to the first connection part, a second electrode which is contacted with and fixed to the second connection part on a second surface of the second electrode, configured to apply a voltage to the second connection part, and the second surface is perpendicular to the direction of the first surface.
摘要翻译： 半导体制造设备包括被配置为加热晶片的加热器元件，与加热器元件集成的第一连接部分和第二连接部分，其构造成向加热器元件施加电压，与第一连接接触并固定的第一电极 所述第一电极的第一表面上的部分被配置为向所述第一连接部施加电压;第二电极，所述第二电极在所述第二电极的第二表面上与所述第二连接部分接触并固定， 到第二连接部分，并且第二表面垂直于第一表面的方向。
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公开(公告)号：US08007588B2
公开(公告)日：2011-08-30
申请号：US11725467
申请日：2007-03-20
申请人： Hideki Ito , Satoshi Inada , Yoshikazu Moriyama
发明人： Hideki Ito , Satoshi Inada , Yoshikazu Moriyama
IPC分类号： C30B21/04
CPC分类号： H01L21/68735 , C23C16/4584 , C23C16/4585 , C23C16/4586 , C30B25/12 , C30B25/165 , C30B29/06 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/02661 , H01L21/68728
摘要： A vapor phase epitaxial growth method using a vapor phase epitaxy apparatus having a chamber, a support structure holding thereon a substrate in the chamber, a first flow path supplying a reactant gas for film formation on the substrate and a second flow path for exhaust of the gas, said method includes rotating the substrate, supplying the reactant gas and a carrier gas to thereby perform vapor-phase epitaxial growth of a semiconductor film on the substrate, and during the vapor-phase epitaxial growth of the semiconductor film on the substrate, controlling process parameters to make said semiconductor film uniform in thickness, said process parameters including flow rates and concentrations of the reactant gas and the carrier gas, a degree of vacuum within said chamber, a temperature of the substrate, and a rotation speed of said substrate.
摘要翻译： 一种使用具有室的气相外延生长装置的气相外延生长方法，在室内保持基板的支撑结构，在基板上供给成膜用反应气体的第一流路和用于排气的第二流路 气体，所述方法包括旋转衬底，提供反应气体和载气，从而在衬底上进行半导体膜的气相外延生长，并且在衬底上的半导体膜的气相外延生长期间，控制 使所述半导体膜的厚度均匀的工艺参数，所述工艺参数包括反应气体和载气的流速和浓度，所述室内的真空度，基板的温度和所述基板的转速。
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公开(公告)号：US07609354B2
公开(公告)日：2009-10-27
申请号：US11090662
申请日：2005-03-28
IPC分类号： G02F1/1345
CPC分类号： G02F1/134363 , G02F1/1345
摘要： Disclosed is a liquid crystal display device that includes a TFT substrate. A plurality of gate lines and a plurality of common lines extend in a first direction on the TFT substrate. Drain lines extend in a second direction substantially perpendicularly to these lines. Bus lines are located outside a display area and are extending parallel to the drain lines. Common line terminals are provided on either side of each block that is constituted by a predetermined number of gate terminals. The common line terminals and the lead lines therefor are formed on the same layer as the drain lines and are connected to the bus lines on the same layer without any contacts being used. Resistance along the routes taken by common lines can be reduced.
摘要翻译： 公开了一种包括TFT基板的液晶显示装置。 多个栅极线和多个公共线在TFT基板上沿第一方向延伸。 排水线在大致垂直于这些线的第二方向上延伸。 总线位于显示区域外部并且平行于排出线延伸。 公共端子设置在由预定数量的栅极端子构成的每个块的任一侧上。 公共线端子及其引线形成在与漏极线相同的层上，并且在相同层上连接到总线，而不使用任何接触。 可以减少沿着公共线路路线的电阻。
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公开(公告)号：US20050237469A1
公开(公告)日：2005-10-27
申请号：US11109960
申请日：2005-04-20
申请人： Tsutomu Kadotani , Satoshi Inada , Takashi Kamino , Yusuke Nogami
发明人： Tsutomu Kadotani , Satoshi Inada , Takashi Kamino , Yusuke Nogami
IPC分类号： G02F1/1339 , G02F1/1343 , G02F1/136
CPC分类号： G02F1/13394
摘要： A liquid crystal display device includes an active matrix substrate and a counter substrate opposing each other with a gap therebetween defined by a plurality of columnar spacers. The active matrix substrate has a plurality of spacer holes each receiving therein a corresponding one of the columnar spacers, and a plurality of dummy spacer holes aligned with the spacer holes and each receiving therein no columnar spacer.
摘要翻译： 液晶显示装置包括有源矩阵基板和对置基板，彼此相对，间隙由多个柱状间隔件限定。 有源矩阵基板具有多个间隔孔，每个隔离孔在其中容纳相应的一个柱状间隔件，以及与间隔孔对准的多个虚拟间隔孔，并且每个间隔孔不接纳柱形间隔件。
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