公开(公告)号：US20070023869A1

公开(公告)日：2007-02-01

申请号：US11494649

申请日：2006-07-28

申请人： Hiroshi Furutani ,  Yoshikazu Moriyama ,  Seiichi Nakazawa ,  Kunihiko Suzuki ,  Hideki Arai ,  Satoshi Inada

发明人： Hiroshi Furutani ,  Yoshikazu Moriyama ,  Seiichi Nakazawa ,  Kunihiko Suzuki ,  Hideki Arai ,  Satoshi Inada

IPC分类号： H01L23/58

CPC分类号： C23C16/4585 ,  C30B25/12

摘要： A vapor phase deposition apparatus includes a chamber, a support table disposed in the chamber and adapted to support a substrate in the chamber, a first passage connected to the chamber and adapted to supply gas to the chamber to form a film on the substrate, and a second passage connected to the chamber and adapted to discharge the gas from the chamber. The support table includes a first depressed portion and a second depressed portion formed in a bottom part of the first depressed portion, a bottom face of the second depressed portion for supporting the substrate.

摘要翻译： 气相沉积设备包括：室，设置在室中并适于在室中支撑衬底的支撑台，连接到室的第一通道，并适于向腔室供应气体以在衬底上形成膜;以及 第二通道，其连接到所述室并适于从所述室排放气体。 支撑台包括形成在第一凹部的底部中的第一凹部和第二凹部，第二凹部的底面用于支撑基板。

公开(公告)号：US08796594B2

公开(公告)日：2014-08-05

申请号：US11723028

申请日：2007-03-16

申请人： Hideki Arai ,  Satoshi Inada ,  Yoshikazu Moriyama ,  Noriki Juumatsu

发明人： Hideki Arai ,  Satoshi Inada ,  Yoshikazu Moriyama ,  Noriki Juumatsu

IPC分类号： H05B1/02 ,  H01L21/67

CPC分类号： H01L21/67103

摘要： A semiconductor manufacturing equipment is provided herein. The semiconductor manufacturing equipment includes a heater element configured to heat a wafer, a first connection part and a second connection part integrated with the heater element, a first electrode electrically contacted with and fixed to the first connection part on a first surface of the first electrode, and a second electrode electrically contacted with and fixed to the second connection part on a second surface of the second electrode. The second surface is perpendicular to the direction of the first surface, and the heater element produces heat by applying a voltage between the first electrode and the second electrode.

摘要翻译： 本文提供半导体制造设备。 半导体制造设备包括：加热元件，被配置为加热晶片，第一连接部分和与加热器元件集成的第二连接部分;与第一电极的第一表面电接触并固定到第一连接部分的第一电极 以及与第二电极电连接并固定到第二连接部分的第二电极的第二表面上的第二电极。 第二表面垂直于第一表面的方向，并且加热器元件通过在第一电极和第二电极之间施加电压而产生热量。

公开(公告)号：US20070221657A1

公开(公告)日：2007-09-27

申请号：US11723028

申请日：2007-03-16

申请人： Hideki Arai ,  Satoshi Inada ,  Yoshikazu Moriyama ,  Noriki Juumatsu

发明人： Hideki Arai ,  Satoshi Inada ,  Yoshikazu Moriyama ,  Noriki Juumatsu

IPC分类号： H05B1/02

CPC分类号： H01L21/67103

摘要： Semiconductor manufacturing equipment includes a heater element configured to heat a wafer, a first connection part and a second connection part which are integrated with the heater element, configured to apply voltages to the heater element, a first electrode contacted with and fixed to the first connection part on a first surface of the first electrode configured to be to apply a voltage to the first connection part, a second electrode which is contacted with and fixed to the second connection part on a second surface of the second electrode, configured to apply a voltage to the second connection part, and the second surface is perpendicular to the direction of the first surface.

摘要翻译： 半导体制造设备包括被配置为加热晶片的加热器元件，与加热器元件集成的第一连接部分和第二连接部分，其构造成向加热器元件施加电压，与第一连接接触并固定的第一电极 所述第一电极的第一表面上的部分被配置为向所述第一连接部施加电压;第二电极，所述第二电极在所述第二电极的第二表面上与所述第二连接部分接触并固定， 到第二连接部分，并且第二表面垂直于第一表面的方向。

公开(公告)号：US20070026148A1

公开(公告)日：2007-02-01

申请号：US11494674

申请日：2006-07-28

申请人： Hideki Arai ,  Hironobu Hirata ,  Yoshikazu Moriyama ,  Shinichi Mitani

发明人： Hideki Arai ,  Hironobu Hirata ,  Yoshikazu Moriyama ,  Shinichi Mitani

IPC分类号： C23C16/00

CPC分类号： C23C16/4584 ,  C23C16/4585 ,  C30B25/12 ,  C30B25/14

摘要： A vapor phase deposition apparatus includes a chamber, a support table which is accommodated in the chamber and supports a substrate in the chamber, a first passage which supplies a gas to form a film and is connected to the chamber, and a second passage which discharges the gas and is connected to the chamber, the support table is provided with a plurality of first projecting portions to constrain a substantially horizontal movement in the same direction as a substrate surface with respect to the substrate, and the substrate is supported on a surface to come in contact with a back face of the substrate.

摘要翻译： 气相沉积设备包括：室，容纳在腔室中的支撑台，并且在腔室中支撑衬底;提供气体以形成膜并连接到腔室的第一通道;以及第二通道， 气体并连接到腔室，支撑台设置有多个第一突出部分，以相对于衬底在与衬底表面相同的方向上约束基本上水平的运动，并且衬底被支撑在表面上 与基板的背面接触。

公开(公告)号：US20080193646A1

公开(公告)日：2008-08-14

申请号：US12030058

申请日：2008-02-12

申请人： Kunihiko Suzuki ,  Hideki Arai ,  Hironobu Hirata

发明人： Kunihiko Suzuki ,  Hideki Arai ,  Hironobu Hirata

IPC分类号： C23C16/52

CPC分类号： C23C16/45589 ,  C23C16/45508 ,  C23C16/45519 ,  C23C16/4585

摘要： A vapor phase deposition apparatus includes: a chamber, a supply unit configured to supply a raw gas into the chamber,a support table disposed in the chamber and configured to support a substrate in the chamber, a rotatable bladed wheel configured to have a plurality of blades, to be arranged to surround the support table, and to discharge the raw gas from above the substrate, and a exhaust unit configured to exhaust the raw gas discharged by the bladed wheel after a vapor phase deposition reaction from the chamber.

摘要翻译： 气相沉积设备包括：腔室，被配置成将原料气体供应到腔室中的供应单元，设置在腔室中并构造成支撑腔室中的基底的支撑台，构造成具有多个 叶片，其被布置成围绕支撑台，并且从基板的上方排出原料气体;以及排气单元，其被配置为在来自所述室的气相沉积反应之后排出由叶轮排出的原料气体。

公开(公告)号：US08257499B2

公开(公告)日：2012-09-04

申请号：US12030058

申请日：2008-02-12

申请人： Kunihiko Suzuki ,  Hideki Arai ,  Hironobu Hirata

发明人： Kunihiko Suzuki ,  Hideki Arai ,  Hironobu Hirata

IPC分类号： C23C16/455 ,  C23C16/458 ,  C23F1/00 ,  H01L21/306 ,  C23C16/06 ,  C23C16/22

CPC分类号： C23C16/45589 ,  C23C16/45508 ,  C23C16/45519 ,  C23C16/4585

摘要： A vapor phase deposition apparatus includes: a chamber, a supply unit configured to supply a raw gas into the chamber, a support table disposed in the chamber and configured to support a substrate in the chamber, a rotatable bladed wheel configured to have a plurality of blades, to be arranged to surround the support table, and to discharge the raw gas from above the substrate, and a exhaust unit configured to exhaust the raw gas discharged by the bladed wheel after a vapor phase deposition reaction from the chamber.

摘要翻译： 气相沉积设备包括：腔室，被配置成将原料气体供应到腔室中的供应单元，设置在腔室中并构造成支撑腔室中的基底的支撑台，构造成具有多个 叶片，其被布置成围绕支撑台，并且从基板的上方排出原料气体;以及排气单元，其被配置为在来自所述室的气相沉积反应之后排出由叶轮排出的原料气体。

公开(公告)号：US06461428B2

公开(公告)日：2002-10-08

申请号：US09729669

申请日：2000-12-05

申请人： Shyuji Tobashi ,  Tadashi Ohashi ,  Katsuyuki Iwata ,  Hiroyuki Saito ,  Shinichi Mitani ,  Takaaki Honda ,  Hideki Arai ,  Yoshitaka Murofushi ,  Kunihiko Suzuki ,  Hidenori Takahashi ,  Hideki Ito ,  Hirofumi Katsumata

发明人： Shyuji Tobashi ,  Tadashi Ohashi ,  Katsuyuki Iwata ,  Hiroyuki Saito ,  Shinichi Mitani ,  Takaaki Honda ,  Hideki Arai ,  Yoshitaka Murofushi ,  Kunihiko Suzuki ,  Hidenori Takahashi ,  Hideki Ito ,  Hirofumi Katsumata

IPC分类号： C30B2514

CPC分类号： C23C16/45587 ,  C23C16/4584 ,  C23C16/46 ,  C23C16/52 ,  C30B25/12 ,  C30B25/16 ,  C30B31/14 ,  C30B31/18

摘要： A method of controlling the temperature of a semiconductor substrate for prevention of any cracks from being formed in the semiconductor substrate event though semiconductors having different temperature rise/fall characteristics are fed into a reactor in which each semiconductor substrates is subjected to an oxidation, diffusion, or a chemical vapor deposition process. The temperatures are measured at various points in the semiconductor substrates in the heated reactor; the temperature rise/fall characteristic thereof is determined by computing the rate of temperature rise and the in-plane temperature distribution out of the measured values; a temperature control program adaptable for said temperature rise/fall characteristic is automatically selected out of a plurality of temperature control programs written in advance; the semiconductor substrate is controlled on the basis of the selected temperature control program. Also is provided a susceptor to reduce contamination of the semiconductor substrate with the metal impurities containing gas flow at the time of forming a thin film on the semiconductor substrate, and a gas phase thin film growth apparatus using such susceptor. The susceptor is formed with a gas flow deflector jutting downwardly from the peripheral portion of the reverse side of the susceptor to deflect the gas flow moving upon rotation along the reverse side of the susceptor from the center thereof to the peripheral portion thereof.

摘要翻译： 控制半导体基板的温度的方法，即使在具有不同温度上升/下降特性的半导体的半导体衬底的事件中，也可以将半导体衬底的各个半导体衬底进行氧化，扩散， 或化学气相沉积工艺。 在加热的反应器中的半导体衬底中的各个点测量温度; 其温度上升/下降特性通过计算测量值中的温度升高速率和面内温度分布来确定; 可以从预先书写的多个温度控制程序中自动选择适合于所述温度上升/下降特性的温度控制程序; 基于所选择的温度控制程序来控制半导体衬底。 还提供了一种感受器，用于在半导体衬底上形成薄膜时减少含有气体流的金属杂质的半导体衬底的污染，以及使用这种感受体的气相薄膜生长装置。 基座形成有从基座的相反侧的周边部分向下突出的气流导流器，以使沿基座的相反侧旋转的气流从其中心偏转到其周边部分。

公开(公告)号：US08524103B2

公开(公告)日：2013-09-03

申请号：US12635815

申请日：2009-12-11

申请人： Hideki Arai ,  Masayoshi Yajima ,  Kunihiko Suzuki

发明人： Hideki Arai ,  Masayoshi Yajima ,  Kunihiko Suzuki

IPC分类号： C23F1/00 ,  C03C15/00 ,  C03C25/68 ,  C25F3/00

CPC分类号： H01L21/68757 ,  C23C16/4581 ,  C30B25/12

摘要： A method for manufacturing a susceptor includes: forming a concave pattern in a surface of a substrate to be processed; applying a SiC paste containing a SiC powder and a sintering agent to the surface of the substrate to be processed to fill the concave pattern to form a SiC coating layer; laminating a SiC substrate on the SiC coating layer; and firing the SiC coating layer to form a SiC layer having at least one convex section on the surface of the SiC substrate.

摘要翻译： 一种感受器的制造方法，其特征在于，在被处理基板的表面形成凹形图案， 将含有SiC粉末和烧结剂的SiC浆料涂布到待加工的基板的表面，以填充凹形图案以形成SiC涂层; 在SiC涂层上层叠SiC衬底; 烧结SiC涂层以形成在SiC衬底的表面上具有至少一个凸部的SiC层。

公开(公告)号：US09359178B2

公开(公告)日：2016-06-07

申请号：US13505145

申请日：2010-02-18

申请人： Hideki Arai ,  Yasunobu Uchino

发明人： Hideki Arai ,  Yasunobu Uchino

IPC分类号： F16D59/02 ,  B66D5/30 ,  B66D5/08

CPC分类号： B66D5/30 ,  B66D5/08

摘要： A detector for an electromagnetic brake, for example used in an elevator system, that, by quantitative judgment, determines whether the brake force of the electromagnetic brake is appropriate. Load cells for detecting the recovery forces of brake springs are arranged between brake springs, which energize brake arms with brake shooes installed on them toward the side of brake wheel, and spring sheets, which hold brake springs in a compressive deformed state, and, at the same time, judgment part judges whether the brake force of electromagnetic brake 4 is outside a prescribed normal range based on the outputs of load cells. If the brake force of electromagnetic brake is outside the normal range, judgment part sends a signal, for example to a monitoring center.

摘要翻译： 例如在电梯系统中使用的用于电磁制动器的检测器，其通过定量判断来确定电磁制动器的制动力是否合适。 用于检测制动弹簧的恢复力的称重传感器布置在制动弹簧之间，制动弹簧使制动臂与其上安装有制动蹄向制动轮侧面通电，以及弹簧片，其将制动弹簧保持在压缩变形状态，并且在 同时，判断部根据称重传感器的输出判断电磁制动器4的制动力是否超出规定的正常范围。 如果电磁制动器的制动力超出正常范围，则判断部件例如发送到监控中心。

公开(公告)号：US08817887B2

公开(公告)日：2014-08-26

申请号：US11897337

申请日：2007-08-30

申请人： Eiji Ueki ,  Hideki Arai ,  Shinji Wakai

发明人： Eiji Ueki ,  Hideki Arai ,  Shinji Wakai

IPC分类号： H04N7/12 ,  H04N11/02 ,  H04N11/04 ,  H04N7/26

CPC分类号： H04N19/00193 ,  H04N19/114 ,  H04N19/142 ,  H04N19/152 ,  H04N19/31 ,  H04N19/40 ,  H04N21/23424 ,  H04N21/2343 ,  H04N21/44016

摘要： Disclosed herein is an information processing apparatus that performs a process of splicing encoded streams together at a splicing point, the apparatus including: control means for determining a section to be subjected to re-encoding in the encoded streams; decoding means for decoding the encoded streams to generate baseband signals; and encoding means for encoding an edited baseband signal generated by splicing the baseband signals generated by the decoding means together at the splicing point to generate an edited encoded stream. The control means provisionally determines a first section to be subjected to re-encoding in first and second encoded streams to be spliced together at a first splicing point. When a second splicing point exists in the first section or a predetermined section that follows the first section, the control means determines a second section to be subjected to re-encoding based on the second splicing point.

摘要翻译： 本文公开了一种信息处理装置，其在拼接点处执行拼接编码流的处理，该装置包括：用于确定要在编码流中进行重新编码的部分的控制装置; 用于解码编码流以产生基带信号的解码装置; 以及编码装置，用于编码通过在拼接点将由解码装置产生的基带信号拼接在一起而生成的编辑的基带信号，以生成编辑的编码流。 控制装置临时确定要在第一拼接点处拼接在一起的第一和第二编码流中要进行重新编码的第一部分。 当在第一部分中存在第二拼接点或在第一部分之后的预定部分时，控制装置基于第二拼接点确定要进行重新编码的第二部分。