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公开(公告)号：US20110039193A1
公开(公告)日：2011-02-17
申请号：US12542171
申请日：2009-08-17
Applicant: Norine E. Chang , C. Wayne Jaeger , Scott Jong Ho Limb , Eric J. Shrader , Francisco E. Torres , Kris Schmidt
Inventor： Norine E. Chang , C. Wayne Jaeger , Scott Jong Ho Limb , Eric J. Shrader , Francisco E. Torres , Kris Schmidt
IPC: G03F1/00
CPC classification number: G03F7/2018 , C09D11/30 , C09D11/36
Abstract: A printed mask derived from a composition comprised of at least one compound including at least one alkaline-hydrolyzable group, and at least one compound including at least one ethylene oxide group. The printed mask is removable using an alkaline solution in about 30 seconds or less.
Abstract translation: 由包含至少一种包含至少一个碱可水解基团的化合物和至少一种包含至少一个环氧乙烷基团的化合物组成的组合物的印刷掩模。 印刷的面罩可在约30秒或更短时间内使用碱性溶液除去。
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公开(公告)号：US20100072475A1
公开(公告)日：2010-03-25
申请号：US12627264
申请日：2009-11-30
Applicant: Scott Jong Ho Limb
Inventor： Scott Jong Ho Limb
IPC: H01L29/786
CPC classification number: H01L29/66742 , H01L21/0332 , H01L27/1288
Abstract: A method of forming a pattern includes forming a first layer on a substrate, forming a second layer on the first layer, depositing a multi-temperature phase-change material on the second layer, patterning the second layer using the multi-temperature phase-change material as a mask, reflowing the multi-temperature phase-change material, and patterning the first layer using the reflowed multi-temperature phase-change material as a mask.
Abstract translation: 形成图案的方法包括在基板上形成第一层，在第一层上形成第二层，在第二层上沉积多温度相变材料，使用多温度相变来图案化第二层 材料作为掩模，回流多温度相变材料，并使用回流多温度相变材料作为掩模对第一层进行图案化。
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3.发明申请公开(公告)号：US20090070975A1
公开(公告)日：2009-03-19
申请号：US12273573
申请日：2008-11-19
Applicant: Baomin Xu , Steven A. Buhler , Stephen D. White , Scott Jong Ho Limb
Inventor： Baomin Xu , Steven A. Buhler , Stephen D. White , Scott Jong Ho Limb
CPC classification number: B41J2/14233 , B41J2/161 , B41J2/1623 , B41J2/1628 , B41J2/1629 , B41J2/1634 , B41J2/1639 , B41J2/1642 , B41J2/1643 , B41J2/1646 , B41J2002/14475 , Y10T29/42 , Y10T29/49401
Abstract: A method of forming a fluid ejector includes forming a recess well into a silicon wafer on a first side of the silicon wafer, and filling the recess well with a sacrificial material. A thin layer structure is deposited onto the first side of a silicon wafer covering the filled recess well. Then a thin film piezoelectric is bonded or deposited to the thin layer structure, and a hole is formed in the thin layer structure exposing at least a portion of the sacrificial material. The sacrificial material is removed from the recess well, wherein the hole in the thin layer in the recess well with the sacrificial material removed, form a fluid inlet. An opening area in the silicon wafer is formed on a second side of the silicon wafer. Then a nozzle plate is formed having a recess portion and an aperture within the recess portion. The nozzle plate is attached to the second side of the silicon wafer, with the recess portion positioned within the open area. The thin layer structure and the recess portion of the nozzle plate define a depth of a fluid cavity defined by the thin layer structure, the recess portion of the nozzle plate and the sidewalls of the silicon wafer.
Abstract translation: 形成流体喷射器的方法包括在硅晶片的第一侧上将凹槽形成凹槽，并用牺牲材料填充凹槽。 在覆盖填充的凹槽的硅晶片的第一侧上沉积薄层结构。 然后，薄膜压电体被结合或沉积到薄层结构上，并且在该薄层结构中形成一个露出至少一部分牺牲材料的孔。 牺牲材料从凹槽中移除，其中凹槽中的薄层中的孔与除去牺牲材料的孔形成流体入口。 硅晶片的开口区域形成在硅晶片的第二侧上。 然后形成在凹部内具有凹部和孔的喷嘴板。 喷嘴板附接到硅晶片的第二侧，凹部位于开放区域内。 喷嘴板的薄层结构和凹部限定由薄层结构，喷嘴板的凹部和硅晶片的侧壁限定的流体腔的深度。
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公开(公告)号：US20080150989A1
公开(公告)日：2008-06-26
申请号：US11642146
申请日：2006-12-20
Applicant: Uma Srinivasan , David Stephen White , Eric J. Shrader , Steven E. Ready , Scott Jong Ho Limb
Inventor： Uma Srinivasan , David Stephen White , Eric J. Shrader , Steven E. Ready , Scott Jong Ho Limb
IPC: B41J29/38
CPC classification number: H05K3/125 , H05K1/0266 , H05K2203/013 , H05K2203/162
Abstract: A method of jet-printing smooth micro-scale features is presented. The desired feature prior to being printed is masked by various decimation filters and the decimation is performed at various pitches. The subsequently printed image is then scanned and analyzed to determine the roughness of the lines. The optimum decimation pitch is determined by the feature that exhibits the least amount of droplet spreading and has the lowest edge roughness. The optimum decimation pitch may also be calculated from the material properties and the dynamics of fluids.
Abstract translation: 提出了一种喷墨打印平滑微尺度特征的方法。 在打印之前的期望特征被各种抽取滤波器遮蔽，并且以各种间距进行抽取。 然后扫描并分析随后打印的图像以确定线的粗糙度。 最佳抽取间距由表现出最小量的液滴扩散并具有最低边缘粗糙度的特征决定。 也可以根据流体的材料性质和动力学来计算最佳抽取间距。
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公开(公告)号：US20080083917A1
公开(公告)日：2008-04-10
申请号：US11539974
申请日：2006-10-10
Applicant: Scott Jong Ho Limb
Inventor： Scott Jong Ho Limb
CPC classification number: H01L29/66742 , H01L21/0332 , H01L27/1288
Abstract: A method of forming a pattern includes forming a first layer on a substrate, forming a second layer on the first layer, depositing a multi-temperature phase-change material on the second layer, patterning the second layer using the multi-temperature phase-change material as a mask, reflowing the multi-temperature phase-change material, and patterning the first layer using the reflowed multi-temperature phase-change material as a mask.
Abstract translation: 形成图案的方法包括在基板上形成第一层，在第一层上形成第二层，在第二层上沉积多温度相变材料，使用多温度相变来图案化第二层 材料作为掩模，回流多温度相变材料，并使用回流多温度相变材料作为掩模对第一层进行图案化。
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Patent Agency Ranking
6.发明申请Traveling wave grids with agitated surface using piezoelectric effect and acoustic traveling waves 失效使用压电效应和声波行波，具有搅动表面的行波电网公开(公告)号：US20080042516A1
公开(公告)日：2008-02-21
申请号：US11501898
申请日：2006-08-08
Applicant: Baomin Xu , Meng H. Lean , Scott Jong Ho Limb
Inventor： Baomin Xu , Meng H. Lean , Scott Jong Ho Limb
IPC: H01L41/00
CPC classification number: H02N2/08
Abstract: A system for transporting particles includes a substrate and a plurality of spaced electrically conductive electrodes carried by the substrate. Further included is a carrier medium adapted for the retention and migration of particles disposed therein, wherein the carrier medium is in operational contact with the electrodes, and a vibration generator is positioned in relation to the substrate to impart vibrations into the carrier medium. In an alternative embodiment, the vibration generator is configured to generate an acoustic traveling wave, which includes a vibration component and a motivation component.
Abstract translation: 用于输送颗粒的系统包括基板和由基板承载的多个间隔开的导电电极。 还包括一种载体介质，其适于保持和迁移设置在其中的颗粒，其中载体介质与电极操作接触，并且振动发生器相对于基板定位，以将振动赋予载体介质。 在替代实施例中，振动发生器被配置为产生声波行波，其包括振动分量和激励分量。
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7.发明授权Method for forming a micro-mechanical component in a semiconductor wafer, and a semiconductor wafer comprising a micro-mechanical component formed therein 有权在半导体晶片中形成微机械部件的方法，以及包括形成在其中的微机械部件的半导体晶片公开(公告)号：US07041528B2
公开(公告)日：2006-05-09
申请号：US10617427
申请日：2003-07-11
Applicant: Colin Stephen Gormley , Scott Jong Ho Limb
Inventor： Colin Stephen Gormley , Scott Jong Ho Limb
CPC classification number: G02B26/0833
Abstract: A method for producing a semiconductor wafer (1) with one or more micro-mirrors (5) formed in a membrane layer (2) which is supported on a handle layer (3) with a buried oxide layer (6) between the membrane and handle layers (2,3) which avoids rupturing of tethers (7) which support the micro-mirrors (5) in the membrane layer (2) and also avoids bowing of the micro-mirrors (5). After trenches (14) are formed in the membrane layer (2) for defining the micro-mirrors (5) and the tethers (7), and prior to forming of through bores (9) through the handle layer (3) to the micro-mirrors (5), a support layer (20) of oxide is deposited on the exposed surface (12) of the membrane layer (2) over the micro-mirrors (5) and the tethers (7) and is back filled into the trenches (14) for supporting bridging portions (16) of the buried oxide layer (6). The buried oxide layer (6) acts as an etch stop layer for the through bores (9), and stresses which are induced in exposed portions (19) of the buried oxide layer (6) exposed by the through bores (9) during etching of the through bores (9) are counteracted by the support layer (20) which prevents rupturing of the bridging portions (16), thereby preventing rupturing of the tethers (7). By counteracting the stresses induced in the exposed portions (19) of the buried oxide layer (6) bowing of the exposed portions (19) is avoided and thus bowing of the micro-mirrors (5) is also avoided.
Abstract translation: 一种用于制造半导体晶片（1）的方法，所述半导体晶片（1）具有形成在膜层（2）中的一个或多个微反射镜（5），所述膜层（2）被支撑在手柄层（3）上，所述掩模氧化物层（6） 手柄层（2,3），其避免支撑膜层（2）中的微反射镜（5）的系绳（7）的破裂，并且还避免微镜（5）的弯曲。 在用于限定微反射镜（5）和系绳（7）的膜层（2）中形成沟槽（14）之后，并且在通过手柄层（3）形成通孔（9）之前， - 反射镜（5），氧化物的支撑层（20）沉积在微透镜（5）和系绳（7）上的膜层（2）的暴露表面（12）上，并被填充到 用于支撑掩埋氧化物层（6）的桥接部分（16）的沟槽（14）。 掩埋氧化物层（6）用作通孔（9）的蚀刻停止层，以及在蚀刻期间由通孔（9）暴露的掩埋氧化物层（6）的暴露部分（19）中诱发的应力 的通孔（9）被支撑层（20）抵消，防止桥接部分（16）的断裂，从而防止系绳（7）的破裂。 通过抵消在暴露部分（19）弯曲的掩埋氧化物层（6）的暴露部分（19）中所引起的应力，避免了微反射镜（5）的弯曲。
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8.发明授权Method of in-process intralayer yield detection, interlayer shunt detection and correction 有权过程中内部产量检测，层间分流检测和校正方法公开(公告)号：US09035673B2
公开(公告)日：2015-05-19
申请号：US12693019
申请日：2010-01-25
Applicant: Michael Yu Tak Young , Scott Jong Ho Limb , William S. Wong , Robert A. Street
Inventor： Michael Yu Tak Young , Scott Jong Ho Limb , William S. Wong , Robert A. Street
CPC classification number: G11C29/025 , G01R31/2853 , G11C2029/0403 , H01L22/14 , H01L22/20
Abstract: A system and method for in-process yield evaluation and correction in an array type of device are provided. The system and method include measuring electrical resistance between individual GATE lines, DATA lines, a DATA bus I/O pad, and a GATE bus I/O pad; and analyzing the measured electrical resistance to identify at least one of the following: GATE line open defects, GATE line bridge defects, DATA line open defects, DATA line bridge defects, and interlayer shunt defects.
Abstract translation: 提供了一种用于阵列型设备中的过程中产量评估和校正的系统和方法。 该系统和方法包括测量各个GATE线路，DATA线路，DATA总线I / O焊盘和GATE总线I / O焊盘之间的电阻; 并分析测量的电阻以识别以下至少之一：GATE线路开路缺陷，GATE线路桥梁缺陷，DATA线路开路缺陷，DATA线路桥梁缺陷和层间分流缺陷。
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9.发明授权公开(公告)号：US08359748B2
公开(公告)日：2013-01-29
申请号：US12273573
申请日：2008-11-19
Applicant: Baomin Xu , Steven A. Buhler , Stephen D. White , Scott Jong Ho Limb
Inventor： Baomin Xu , Steven A. Buhler , Stephen D. White , Scott Jong Ho Limb
CPC classification number: B41J2/14233 , B41J2/161 , B41J2/1623 , B41J2/1628 , B41J2/1629 , B41J2/1634 , B41J2/1639 , B41J2/1642 , B41J2/1643 , B41J2/1646 , B41J2002/14475 , Y10T29/42 , Y10T29/49401
Abstract: A method of forming a fluid ejector includes forming a recess well into a silicon wafer on a first side of the silicon wafer, and filling the recess well with a sacrificial material. A thin layer structure is deposited onto the first side of a silicon wafer covering the filled recess well. Then a thin film piezoelectric is bonded or deposited to the thin layer structure, and a hole is formed in the thin layer structure exposing at least a portion of the sacrificial material. The sacrificial material is removed from the recess well, wherein the hole in the thin layer in the recess well with the sacrificial material removed, form a fluid inlet. An opening area in the silicon wafer is formed on a second side of the silicon wafer. Then a nozzle plate is formed having a recess portion and an aperture within the recess portion. The nozzle plate is attached to the second side of the silicon wafer, with the recess portion positioned within the open area. The thin layer structure and the recess portion of the nozzle plate define a depth of a fluid cavity defined by the thin layer structure, the recess portion of the nozzle plate and the sidewalls of the silicon wafer.
Abstract translation: 形成流体喷射器的方法包括在硅晶片的第一侧上将凹槽形成凹槽，并用牺牲材料填充凹槽。 在覆盖填充的凹槽的硅晶片的第一侧上沉积薄层结构。 然后，薄膜压电体被结合或沉积到薄层结构上，并且在该薄层结构中形成一个露出至少一部分牺牲材料的孔。 牺牲材料从凹槽中移除，其中凹槽中的薄层中的孔与除去牺牲材料的孔形成流体入口。 硅晶片的开口区域形成在硅晶片的第二侧上。 然后形成在凹部内具有凹部和孔的喷嘴板。 喷嘴板附接到硅晶片的第二侧，凹部位于开放区域内。 喷嘴板的薄层结构和凹部限定由薄层结构，喷嘴板的凹部和硅晶片的侧壁限定的流体腔的深度。
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公开(公告)号：US07998868B2
公开(公告)日：2011-08-16
申请号：US12713704
申请日：2010-02-26
Applicant: Scott Jong Ho Limb
Inventor： Scott Jong Ho Limb
IPC: H01L21/311
CPC classification number: H01L29/66742 , H01L21/0332 , H01L27/1288
Abstract: A method of forming a pattern includes forming a first layer on a substrate, forming a second layer on the first layer, depositing a multi-temperature phase-change material on the second layer, patterning the second layer using the multi-temperature phase-change material as a mask, reflowing the multi-temperature phase-change material, and patterning the first layer using the reflowed multi-temperature phase-change material as a mask.
Abstract translation: 形成图案的方法包括在基板上形成第一层，在第一层上形成第二层，在第二层上沉积多温度相变材料，使用多温度相变来图案化第二层 材料作为掩模，回流多温度相变材料，并使用回流多温度相变材料作为掩模对第一层进行图案化。
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