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1.发明授权Semiconductor device, method of making the same and liquid crystal display device 有权半导体装置及其制造方法以及液晶显示装置公开(公告)号：US07317207B2
公开(公告)日：2008-01-08
申请号：US11146016
申请日：2005-06-07
IPC分类号： H01L29/786
CPC分类号： H01L29/78696 , G09G3/3648 , G09G2300/0408 , H01L27/1277 , H01L27/1281 , H01L27/1296 , H01L29/04 , H01L29/045 , H01L29/41733 , H01L29/66757 , H01L29/66765 , H01L29/78666 , H01L29/78669 , H01L29/78675 , H01L29/78678
摘要： To provide TFT of improved low-temperature polycrystalline layer that has higher electron mobility and assures less fluctuation in manufacture in view of realizing a liquid-crystal display device having a large display area by utilizing a glass substrate.A TFT having higher electron mobility can be realized within the predetermined range of characteristic fluctuation by utilizing the semiconductor thin-film (called quasi single crystal thin-film) formed of poly-crystal grain joined with the {111} twin-boundary of Diamond structure as the channel region (namely, active region) of TFT.
摘要翻译： 为了提供具有较高电子迁移率的改进的低温多晶层的TFT，并且鉴于通过利用玻璃基板实现具有大的显示面积的液晶显示装置，确保制造中的波动较小。 通过利用与金刚石结构的{111}双边界结合的多晶晶粒形成的半导体薄膜（称为准单晶薄膜），可以在特定波动的预定范围内实现具有较高电子迁移率的TFT 作为TFT的沟道区域（即有源区）。
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公开(公告)号：US20050230683A1
公开(公告)日：2005-10-20
申请号：US11146016
申请日：2005-06-07
IPC分类号： G02F1/136 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/04 , H01L29/417 , H01L29/786
CPC分类号： H01L29/78696 , G09G3/3648 , G09G2300/0408 , H01L27/1277 , H01L27/1281 , H01L27/1296 , H01L29/04 , H01L29/045 , H01L29/41733 , H01L29/66757 , H01L29/66765 , H01L29/78666 , H01L29/78669 , H01L29/78675 , H01L29/78678
摘要： To provide TFT of improved low-temperature polycrystalline layer that has higher electron mobility and assures less fluctuation in manufacture in view of realizing a liquid-crystal display device having a large display area by utilizing a glass substrate. A TFT having higher electron mobility can be realized within the predetermined range of characteristic fluctuation by utilizing the semiconductor thin-film (called quasi single crystal thin-film) formed of poly-crystal grain joined with the {111} twin-boundary of Diamond structure as the channel region (namely, active region) of TFT.
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3.发明申请SEMICONDUCTOR DEVICE, METHOD OF MAKING THE SAME AND LIQUID CRYSTAL DISPLAY DEVICE 审中-公开半导体器件，其制造方法和液晶显示器件公开(公告)号：US20080111134A1
公开(公告)日：2008-05-15
申请号：US11969488
申请日：2008-01-04
CPC分类号： H01L29/78696 , G09G3/3648 , G09G2300/0408 , H01L27/1277 , H01L27/1281 , H01L27/1296 , H01L29/04 , H01L29/045 , H01L29/41733 , H01L29/66757 , H01L29/66765 , H01L29/78666 , H01L29/78669 , H01L29/78675 , H01L29/78678
摘要： To provide TFT of improved low-temperature polycrystalline layer that has higher electron mobility and assures less fluctuation in manufacture in view of realizing a liquid-crystal display device having a large display area by utilizing a glass substrate. A TFT having higher electron mobility can be realized within the predetermined range of characteristic fluctuation by utilizing the semiconductor thin-film (called quasi single crystal thin-film) formed of poly-crystal grain joined with the {111} twin-boundary of Diamond structure as the channel region (namely, active region) of TFT.
摘要翻译： 为了提供具有较高电子迁移率的改进的低温多晶层的TFT，并且鉴于通过利用玻璃基板实现具有大的显示面积的液晶显示装置，确保制造中的波动较小。 通过利用与金刚石结构的{111}双边界结合的多晶晶粒形成的半导体薄膜（称为准单晶薄膜），可以在特定波动的预定范围内实现具有较高电子迁移率的TFT 作为TFT的沟道区域（即有源区）。
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4.发明授权Semiconductor device, method of making the same and liquid crystal display device 有权半导体装置及其制造方法以及液晶显示装置公开(公告)号：US06903372B1
公开(公告)日：2005-06-07
申请号：US09698274
申请日：2000-10-30
IPC分类号： G02F1/136 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/04 , H01L29/417 , H01L29/786 , H01L29/76
CPC分类号： H01L29/78696 , G09G3/3648 , G09G2300/0408 , H01L27/1277 , H01L27/1281 , H01L27/1296 , H01L29/04 , H01L29/045 , H01L29/41733 , H01L29/66757 , H01L29/66765 , H01L29/78666 , H01L29/78669 , H01L29/78675 , H01L29/78678
摘要： To provide TFT of improved low-temperature polycrystalline layer that has higher electron mobility and assures less fluctuation in manufacture in view of realizing a liquid-crystal display device having a large display area by utilizing a glass substrate.A TFT having higher electron mobility can be realized within the predetermined range of characteristic fluctuation by utilizing the semiconductor thin-film (called quasi single crystal thin-film) formed of poly-crystal grain joined with the {111} twin-boundary of Diamond structure as the channel region (namely, active region) of TFT.
摘要翻译： 为了提供具有较高电子迁移率的改进的低温多晶层的TFT，并且鉴于通过利用玻璃基板实现具有大的显示面积的液晶显示装置，确保制造中的波动较小。 通过利用与金刚石结构的{111}双边界结合的多晶晶粒形成的半导体薄膜（称为准单晶薄膜），可以在特定波动的预定范围内实现具有较高电子迁移率的TFT 作为TFT的沟道区域（即有源区）。
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